IGBT Modules. VWI6-12P1 Datasheet

VWI6-12P1 Modules. Datasheet pdf. Equivalent


Part VWI6-12P1
Description IGBT Modules
Feature IGBT Module Sixpack in ECO-PAC 2 VWI 6-12P1 IC25 = 6 A VCES = 1200 V VCE(sat) typ. = 3.9 V Pre.
Manufacture IXYS
Datasheet
Download VWI6-12P1 Datasheet


IGBT Module Sixpack in ECO-PAC 2 VWI 6-12P1 IC25 = 6 A VC VWI6-12P1 Datasheet
Recommendation Recommendation Datasheet VWI6-12P1 Datasheet




VWI6-12P1
IGBT Module
Sixpack in ECO-PAC 2
VWI 6-12P1
IC25 = 6 A
VCES
= 1200 V
VCE(sat) typ. = 3.9 V
Preliminary data
S9
L 9 N 9 X 18
N 5 R 5 W 14
A 1 C 1 K 10
F3
G1
K 12
NTC
J 13
A5
D5
H5
Pin arrangement see outlines
IGBTs
Symbol
VCES
VGES
IC25
IC80
ICM
VCEK
tSC
(SCSOA)
Ptot
Symbol
Conditions
Maximum Ratings
TVJ = 25°C to 150°C
1200
± 20
V
V
TC = 25°C
TC = 80°C
VGE
=
15/0
V;
R
G
=
89
;
TVJ
=
125°C
RBSOA, Clamped inductive load; L = 100 µH
VCE = VCES; VGE = 15/0 V; RG = 89 ; TVJ = 125°C
non-repetitive
6
4.1
9.6
VCES
10
A
A
A
µs
TC = 25°C
40 W
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
Features
• NPT IGBT's
- positive temperature coefficient of
saturation voltage
- fast switching
• FRED diodes
- fast reverse recovery
- low forward voltage
• Industry Standard Package
- solderable pins for PCB mounting
- isolated DCB ceramic base plate
Typical Applications
• AC drives
• power supplies with power factor
correction
V
CE(sat)
VGE(th)
ICES
IGES
td(on)
t
r
td(off)
t
f
Eon
Eoff
C
ies
QGon
RthJC
R
thJH
I
C
=
4
A;
V
GE
=
15
V;
TVJ
=
25°C
TVJ = 125°C
IC = 0.1 mA; VGE = VCE
VCE = VCES; VGE = 0 V; TVJ = 25°C
VCE = 960 V; VGE = 0 V; TVJ = 125°C
VCE = 0 V; VGE = ± 20 V
Inductive load, TVJ = 125°C
VCE = 600 V; IC = 4 A
V
GE
=
15/0
V;
R
G
=
89
V = 25 V; V = 0 V; f = 1 MHz
CE GE
VCE = 960 V; VGE = 15 V; IC = 2 A
(per IGBT)
(per IGBT) with heatsink compound
3.9 4.6 V
4.6 V
3 5V
0.1 mA
0.5 mA
100 nA
30 ns
20 ns
290 ns
90 ns
0.4 mJ
0.2 mJ
205 pF
11 nC
3.1 K/W
6.2 K/W
IXYS reserves the right to change limits, test conditions and dimensions.
© 2003 IXYS All rights reserved
IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
www.ixys.net
1-2
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670



VWI6-12P1
VWI 6-12P1
Diodes
Symbol
IF25
IF80
Conditions
TC = 25°C
TC = 80°C
Symbol
VF
IRM
trr
R
thJC
RthJH
Conditions
IF = 4 A; TVJ = 25°C
TVJ = 125°C
IF = ... A; diF/dt = ... A/µs; TVJ = 125°C
VR = 600 V; VGE = 0 V
(per diode)
(per diode) with heatsink compound
Temperature Sensor NTC
Symbol
Conditions
R25
B25/50
T = 25°C
Maximum Ratings
12 A
8A
Dimensions in mm (1 mm = 0.0394")
Characteristic Values
min. typ. max.
2.4 2.5 V
2.0 V
tbd A
tbd ns
3.8 K/W
7.6 K/W
Characteristic Values
min. typ. max.
4.75 5.0 5.25 k
3375
K
Component
Symbol
TVJ
Tstg
VISOL
Md
Conditions
IISOL 1 mA; 50/60 Hz
mounting torque (M4)
a Max. allowable acceleration
Maximum Ratings
-40...+150
-40...+125
3000
1.5 - 2.0
14 - 18
50
°C
°C
V~
Nm
lb.in.
m/s2
Symbol
dS
dA
Weight
Conditions
Creepage distance on surface (Pin to heatsink)
Strike distance in air (Pin to heatsink)
Characteristic Values
min. typ. max.
11.2 mm
11.2 mm
24 g
IXYS reserves the right to change limits, test conditions and dimensions.
© 2003 IXYS All rights reserved
2-2







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)