IGBT. IXDR35N60BD1 Datasheet

IXDR35N60BD1 IGBT. Datasheet pdf. Equivalent


Part IXDR35N60BD1
Description IGBT
Feature IXDR 35N60 BD1 IGBT with optional Diode High Speed, Low Saturation Voltage VCES = 600 V IC25 = 38 .
Manufacture IXYS
Datasheet
Download IXDR35N60BD1 Datasheet


IXDR 35N60 BD1 IGBT with optional Diode High Speed, Low Sat IXDR35N60BD1 Datasheet
Recommendation Recommendation Datasheet IXDR35N60BD1 Datasheet




IXDR35N60BD1
IXDR 35N60 BD1
IGBT
with optional Diode
High Speed,
Low Saturation Voltage
VCES = 600 V
IC25 = 38 A
V =CE(sat) typ 2.2 V
C ISOPLUS 247TM
G
E
G
C
E
Isolated back surface
G = Gate,
C = Collector ,
E = Emitter
TAB = Collector
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC90
ICM
RBSOA
tSC
(SCSOA)
PC
TJ
Tstg
VISOL
FC
Weight
Symbol
V
(BR)CES
VGE(th)
ICES
I
GES
VCE(sat)
Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 20 kΩ
Continuous
Transient
TC = 25°C
TC = 90°C
TC = 90°C, tp =1 ms
VGE= ±15 V, TJ = 125°C, RG = 10 Ω
Clamped inductive load, L = 30 µH
VGE= ±15 V, VCE = 600 V, TJ = 125°C
RG = 10 Ω, non repetitive
TC = 25°C
IGBT
Diode
50/60 Hz RMS; IISOL 1 mA
mounting force with clip
typical
Maximum Ratings
600 V
600 V
±20 V
±30 V
38 A
24 A
48 A
ICM = 110
VCEK < VCES
10
A
µs
125
50
-55 ... +150
-55 ... +150
2500
20...120
6
W
W
°C
°C
V~
N
g
Conditions
V =0V
GE
IC = 0.7 mA, VCE = VGE
VCE = VCES
V = 0 V, V = ± 20 V
CE GE
IC = 35 A, VGE = 15 V
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
600 V
3 5V
TJ = 25°C
TJ = 125°C
0.1 mA
1 mA
± 500 nA
2.2 2.7 V
Features
NPT IGBT technology
low switching losses
low tail current
no latch up
short circuit capability
positive temperature coefficient for
easy paralleling
MOS input, voltage controlled
optional ultra fast diode
Epoxy meets UL 94V-0
Isolated and UL registered E153432
Advantages
DCB Isolated mounting tab
Meets TO-247AD package Outline
Package for clip or spring mounting
Space savings
High power density
Typical Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
IXYS reserves the right to change limits, test conditions and dimensions
© 2006 IXYS All rights reserved
1-4



IXDR35N60BD1
IXDR 35N60 BD1
Symbol
Cies
Coes
Cres
Qg
td(on)
tr
t
d(off)
tf
E
on
Eoff
RthJC
RthCH
Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VCE = 25 V, VGE = 0 V, f = 1 MHz
1600
150
90
pF
pF
pF
IC = 35 A, VGE = 15 V, VCE = 480V
Inductive load, TJ = 125°C
IC = 35 A, VGE = ±15 V,
V
CE
=
300
V,
R
G
=
10
Ω
140 nC
30 ns
45 ns
320 ns
70 ns
1.6 mJ
0.8 mJ
Package with heatsink compound
1 K/W
0.25 K/W
ISOPLUS247TM OUTLINE
Reverse Diode (FRED) [D1 version only]
Characteristic Values
Symbol
Conditions
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VF IF = 35 A, VGE = 0 V
IF = 35 A, VGE = 0 V, TJ = 125°C
2.1 2.3 V
1.6 V
IF TC = 25°C
TC = 90°C
35 A
18 A
IRM
trr
trr
RthJC
IF = 15 A, -diF/dt = 400 A/µs, VR = 300 V
VGE = 0 V, TJ = 125°C
IF = 1 A, -diF/dt = 100 A/µs, VR = 30 V, VGE = 0 V
13 A
90 ns
40 ns
2.3 K/W
The convex bow of substrate is typ. < 0.04 mm over plastic surface level
of device bottom side
This drawing will meet all dimensions requirement of JEDEC outline
TO-247 AD except screw hole and except Lmax.
IXYS reserves the right to change limits, test conditions and dimensions
© 2006 IXYS All rights reserved
2-4







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