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VKI75-06P1

IXYS

IGBT Modules

VKI 75-06 P1 IGBT Modules in ECO-PAC 2 H-Bridge configuration Short Circuit SOA Capability Square RBSOA IC25 = 69 A V...


IXYS

VKI75-06P1

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Description
VKI 75-06 P1 IGBT Modules in ECO-PAC 2 H-Bridge configuration Short Circuit SOA Capability Square RBSOA IC25 = 69 A V CES = 600 V VCE(sat) typ. = 2.3 V P18 NTC N9 F10 A1 A4 D4 L9 O7 S18 K10 K13 H13 X18 T16 Pin arangement see outlines IGBTs Symbol VCES VGES IC25 IC80 ICM VCEK t SC (SCSOA) Ptot Symbol VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies R thJC RthJH phase-out Conditions Maximum Ratings TVJ = 25°C to 150°C 600 ± 20 V V TC = 25°C TC = 80°C VGE = ±15 V; RG = 22 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH V CE = VCES; VGE = ±15 V; R G = 22 Ω; TVJ = 125°C non-repetitive 69 48 100 VCES 10 A A A µs TC = 25°C 208 W Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. IC = 75 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C IC = 1 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C VCE = 0 V; VGE = ± 20 V Inductive load, TVJ = 125°C V = 300 V; I = 40 A CE C VGE = 15/0 V; RG = 22 Ω 2.3 2.8 V 2.8 V 4.5 6.5 V 0.8 mA 4.4 mA 100 nA 50 ns 55 ns 300 ns 30 ns 1.8 mJ 1.4 mJ VCE = 25 V; VGE = 0 V; f = 1 MHz (per IGBT) with heatsink compound (0.42 K/m.K; 50 µm) 2.8 nF 0.6 K/W 1.2 K/W Features NPT IGBT technology low saturation voltage low switching losses square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy parallelling MOS input, voltage controlled ultra fast free wheeling diodes solderable pins for PCB mounting pa...




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