ECH8308

Ordering number : ENA1182A ECH8308 P-Channel Power MOSFET –12V, –10A, 12.5mΩ, Single ECH8 http://onsemi.com Features Best suited for load switching 1.8V drive Protection diode in Low ON-resistance Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) Ratings --12 ±10 --10 --40 1.6 150 --55 to +150 Unit V V A A W °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 7011A-002 Top View 2.9 85 ECH8308-TL-H 0.15 0 to 0.02 Product & Package Information Package : ECH8 JEITA, JEDEC :- Minimum Packing Quantity : 3,000 pcs./reel Packing Type : TL Marking JK Lot No. TL 2.8 0.9 0.25 2.3 0.25 1 0.65 4 0.3 Bottom View 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain ECH8 Electrical Connection 87 6 5 12 3 4 0.07 Semiconductor Components Industries, LLC, 2013 July, 2013 60612 TKIM/62508PE TIIM TC-00001486 No. A1182-1/7 ECH8308 Electrical Cha...