Power MOSFET. SFT1443 Datasheet

SFT1443 MOSFET. Datasheet pdf. Equivalent


Part SFT1443
Description Power MOSFET
Feature Ordering number : ENA1896B SFT1443 Power MOSFET 100V, 225mΩ, 9A, Single N-Channel Features • Hig.
Manufacture ON Semiconductor
Datasheet
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Ordering number : ENA1896B SFT1443 Power MOSFET 100V, 225m SFT1443 Datasheet
Recommendation Recommendation Datasheet SFT1443 Datasheet




SFT1443
Ordering number : ENA1896B
SFT1443
Power MOSFET
100V, 225m, 9A, Single N-Channel
Features
High Speed Switching
ESD Diode-Protected Gate
Low Gate Charge
Pb-free, Halogen-free and RoHS Compliance
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter
Symbol
Drain to Source Voltage
VDSS
Gate to Source Voltage
VGSS
Drain Current (DC)
Drain Current
PW10μs, duty cycle1%
ID
IDP
Power Dissipation
Junction Temperature
Storage Temperature
Tc=25°C
PD
Tj
Tstg
Thermal Resistance Ratings
Parameter
Junction to Case Steady State
Junction to Ambient *1
Note : *1 Insertion mounted
Symbol
RθJC
RθJA
Value
100
±20
9
36
1.0
19
150
55 to +150
Unit
V
V
A
A
W
W
°C
°C
Value
6.58
125
Unit
°C/W
http://onsemi.com
Electrical Connection
N-Channel
2,4
1
3
Packing Type:TL
Marking
T1443
LOT No.
TL
4
1
2
IPAK(TP)
3
4
2
1
3
DPAK(TP-FA)
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of this data sheet.
Semiconductor Components Industries, LLC, 2014
September, 2014
91014 TKIM TC-00003151/60612 TKIM/D1510PA TKIM TC-00002450 No.A1896-1/6



SFT1443
Electrical Characteristics at Ta = 25°C
Parameter
Symbol
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Static Drain to Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Forward Diode Voltage
V(BR)DSS
IDSS
IGSS
VGS(th)
gFS
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
SFT1443
Conditions
ID=1mA, VGS=0V
VDS=100V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=4.5A
ID=3A, VGS=10V
ID=1.5A, VGS=4.5V
ID=1.5A, VGS=4V
VDS=20V, f=1MHz
See specified Test Circuit.
VDS=50V, VGS=10V, ID=9A
IS=9A, VGS=0V
min
100
Value
typ
1.5
4
180
195
205
490
34
19
8
10
34
24
9.8
1.8
1.6
1.03
max
1
±10
2.6
225
275
290
1.2
Unit
V
μA
μA
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Switching Time Test Circuit
VIN
10V
0V
VIN
PW=10μs
D.C.≤1%
G
VDD=50V
ID=4.5A
RL=11.1Ω
D VOUT
SFT1443
P.G 50Ω S
No.A1896-2/6







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