Power MOSFET. ECH8656 Datasheet

ECH8656 MOSFET. Datasheet pdf. Equivalent


Part ECH8656
Description N-Channel Power MOSFET
Feature Ordering number : EN9010A ECH8656 N-Channel Power MOSFET 20V, 7.5A, 17mΩ, Dual ECH8 http://onsemi..
Manufacture ON Semiconductor
Datasheet
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Ordering number : EN9010A ECH8656 N-Channel Power MOSFET 20 ECH8656 Datasheet
Recommendation Recommendation Datasheet ECH8656 Datasheet




ECH8656
Ordering number : EN9010A
ECH8656
N-Channel Power MOSFET
20V, 7.5A, 17mΩ, Dual ECH8
http://onsemi.com
Features
ON-resistance RDS(on)1=13mΩ (typ.)
Halogen free compliance
Protection diode in
1.8V drive
Nch + Nch MOSFET
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
VDSS
VGSS
ID
IDP
PD
PT
Tch
Storage Temperature
Tstg
Conditions
PW10μs, duty cycle1%
When mounted on ceramic substrate (900mm2×0.8mm) 1unit
When mounted on ceramic substrate (900mm2×0.8mm)
Ratings
20
±10
7.5
40
1.3
1.5
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7011A-001
Top View
2.9
85
ECH8656-TL-H
0.15
0 to 0.02
Product & Package Information
• Package
: ECH8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
TB
Lot No.
TL
1
0.65
4
0.3
Bottom View
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
ECH8
Electrical Connection
8765
1234
Semiconductor Components Industries, LLC, 2013
July, 2013
80112 TKIM/83111PE TKIM TC-00002622 No.9010-1/7



ECH8656
ECH8656
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
RDS(on)4
RDS(on)5
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=1mA, VGS=0V
VDS=20V, VGS=0V
VGS=±8V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=4A
ID=4A, VGS=4.5V
ID=4A, VGS=4.0V
ID=4A, VGS=3.1V
ID=2A, VGS=2.5V
ID=0.5A, VGS=1.8V
VDS=10V, f=1MHz
See specied Test Circuit.
VDS=10V, VGS=4.5V, ID=7.5A
IS=7.5A, VGS=0V
Switching Time Test Circuit
VIN
4V
0V
VIN
PW=10μs
D.C.1%
G
VDD=10V
ID=4A
RL=2.5Ω
D VOUT
ECH8656
P.G 50Ω S
min
20
Ratings
typ
0.5
9
9.4
11
12.5
17
7
13
13.5
16
18
30
1060
180
135
17.5
120
68
80
10.8
2.1
2.9
0.74
max
1
±10
1.3
17
18
22
26
48
1.2
Unit
V
μA
μA
V
S
mΩ
mΩ
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Ordering Information
Device
ECH8656-TL-H
Package
ECH8
Shipping
3,000pcs./reel
memo
Pb Free and Halogen Free
No.9010-2/7







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