ECH8656

Ordering number : EN9010A ECH8656 N-Channel Power MOSFET 20V, 7.5A, 17mΩ, Dual ECH8 http://onsemi.com Features ON-resistance RDS(on)1=13mΩ (typ.) Halogen free compliance Protection diode in 1.8V drive Nch + Nch MOSFET Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature VDSS VGSS ID IDP PD PT Tch Storage Temperature Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit When mounted on ceramic substrate (900mm2×0.8mm) Ratings 20 ±10 7.5 40 1.3 1.5 150 --55 to +150 Unit V V A A W W °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 7011A-001 Top View 2.9 85 ECH8656-TL-H 0.15 0 to 0.02 Product & Package Information Package : ECH8 JEITA, JEDEC :- Minimum Packing Quantity : 3,000 pcs./reel Packing Type : TL Marking TB Lot No. TL 2.8 0.9 0.25 2.3 0.25 1 0.65 4 0.3 Bottom View 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 ECH8 Electrical Connection 8765 1234 0.07 Semiconductor Components Industries, LLC, 2013 July, 2013...