Power MOSFET. NVGS3130N Datasheet

NVGS3130N MOSFET. Datasheet pdf. Equivalent


Part NVGS3130N
Description Power MOSFET
Feature NTGS3130N, NVGS3130N Power MOSFET 20 V, 5.6 A Single N-Channel, TSOP-6 Features • Leading Edge Tre.
Manufacture ON Semiconductor
Datasheet
Download NVGS3130N Datasheet


NTGS3130N, NVGS3130N Power MOSFET 20 V, 5.6 A Single N-Chan NVGS3130N Datasheet
Recommendation Recommendation Datasheet NVGS3130N Datasheet




NVGS3130N
NTGS3130N, NVGS3130N
Power MOSFET
20 V, 5.6 A Single
N-Channel, TSOP-6
Features
Leading Edge Trench Technology for Low On Resistance
Low Gate Charge for Fast Switching
Small Size (3 x 2.75 mm) TSOP6 Package
NV Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AECQ101 Qualified and
PPAP Capable
This is a PbFree Device
Applications
DCDC Converters
Lithium Ion Battery Applications
Load/Power Switching
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
DraintoSource Voltage
GatetoSource Voltage
VDSS 20 V
VGS ±8 V
Continuous Drain Current
(Note 1)
Power Dissipation
(Note 1)
Steady
State
t 10 s
Steady
State
t 10 s
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
ID
PD
5.6
4.1 A
6.2
1.1
W
1.4
Continuous Drain Current
(Note 2)
Power Dissipation
(Note 2)
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
ID
PD
4.2
3.0 A
0.6 W
Pulsed Drain Current
tP 10 s
Operating and Storage Temperature Range
IDM
TJ, Tstg
19
55 to
150
A
°C
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
IS 1.0 A
TL 260 °C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
JunctiontoAmbient Steady State (Note 1)
110
JunctiontoAmbient t 10 s (Note 1)
JunctiontoAmbient Steady State (Note 2)
RqJA
90 °C/W
200
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surfacemounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces)
2. Surfacemounted on FR4 board using the minimum recommended pad size
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V(BR)DSS
20 V
RDS(on) mAX
24 mW @ 4.5 V
32 mW @ 2.5 V
NChannel
Drain 1 2 5 6
ID Max
5.6 A
4.9 A
Gate 3
Source 4
MARKING DIAGRAM &
PIN ASSIGNMENT
1
TSOP6
CASE 318G
STYLE 1
Drain Drain Source
654
XX M G
G
123
Drain Drain Gate
XX = Specific Device Code
M = Date Code*
G = PbFree Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information ion page 5 of
this data sheet.
© Semiconductor Components Industries, LLC, 2014
August, 2014 Rev. 1
1
Publication Order Number:
NTGS3130N/D



NVGS3130N
NTGS3130N, NVGS3130N
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Test Condition
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
DraintoSource Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V; ID = 250 mA
Min Typ Max Unit
20
9.8
V
mV/°C
Zero Gate Voltage Drain Current
GatetoSource Leakage Current
ON CHARACTERISTICS (Note 3)
IDSS
IGSS
VGS = 0 V; VDS = 16 V,
TJ = 25°C
VDS = 0, VGS = ± 8 V
1.0 mA
100 nA
Gate Threshold Voltage
Negative Temperature Coefficient
VGS(TH)
VGS(TH)/TJ
DraintoSource OnResistance
RDS(on)
Forward Transconductance
gFS
CHARGES, CAPACITANCE, & GATE RESISTANCE
VGS = VDS, ID = 250 mA
VGS = 4.5 V, ID = 5.6 A
VGS = 2.5 V, ID = 4.9 A
VDS = 10 V, ID = 5.6 A
0.4 0.6 1.4
V
3.4 mV/°C
19 24
25 32 mW
8.2 S
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
GatetoSource Charge
QGS
GatetoDrain Charge
QGD
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
GatetoSource Charge
QGS
GatetoDrain Charge
QGD
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 4)
TurnOn Delay Time
td(ON)
Rise Time
tr
TurnOff Delay Time
td(OFF)
Fall Time
tf
DRAINSOURCE DIODE CHARACTERISTICS
VGS = 0 V,
f = 1 MHz,
VDS = 16 V
Vf =GS1
= 0 V,
MHz,
VDS = 10 V
VGS = 4.5 V
VDS = 16 V
ID = 5.6 A
VGS = 4.5 V
VDS = 5.0 V
ID = 6.2 A
VGS = 4.5 V,
VDD = 16 V,
ID = 1 A,
RG = 3 W
935
169
104
965
198
110
13.2 20.3
0.60
1.5
4.2
11.8 18.0
0.6
1.4
2.7
pF
nC
6.3 12.6
7.3 13.5
21.7 35.1
9.7 17.6
ns
Forward Diode Voltage
VSD
VISG=S
=0
1.0
V,
A
TJ = 25°C
0.7 1.2
V
Reverse Recovery Time
tRR
20.4
Charge Time
Discharge Time
ta
tb
VGS = 0 Vdc,
dISD/dt = 100 A/ms,
IS = 1.0 A
8.1 ns
11.6
Reverse Recovery Charge
QRR
8.8 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
4. Switching characteristics are independent of operating junction temperature.
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