NVGS3130N

NTGS3130N, NVGS3130N Power MOSFET 20 V, 5.6 A Single N-Channel, TSOP-6 Features Leading Edge Trench Technology for Low On Resistance Low Gate Charge for Fast Switching Small Size (3 x 2.75 mm) TSOP−6 Package NV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable This is a Pb−Free Device Applications DC−DC Converters Lithium Ion Battery Applications Load/Power Switching MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage VDSS 20 V VGS ±8 V Continuous Drain Current (Note 1) Power Dissipation (Note 1) Steady State t ≤ 10 s Steady State t ≤ 10 s TA = 25°C TA = 85°C TA = 25°C TA = 25°C ID PD 5.6 4.1 A 6.2 1.1 W 1.4 Continuous Drain Current (Note 2) Power Dissipation (Note 2) Steady State TA = 25°C TA = 85°C TA = 25°C ID PD 4.2 3.0 A 0.6 W Pulsed Drain Current tP ≤ 10 s Operating and Storage Temperature Range IDM TJ, Tstg 19 −55 to 150 A °C Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) IS 1.0 A TL 260 °C THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit Junction−to−Ambient − Steady State (Note 1) 110 Junction−to−Ambient − t ≤ 10 s (Note 1) Junction−to−Ambient − Steady State (Note 2) RqJA 90 °C/W 200 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device func...