Power MOSFET. NDD04N50Z Datasheet

NDD04N50Z MOSFET. Datasheet pdf. Equivalent


Part NDD04N50Z
Description N-Channel Power MOSFET
Feature NDD04N50Z N-Channel Power MOSFET 500 V, 2.7 W Features • Low ON Resistance • Low Gate Charge • ESD .
Manufacture ON Semiconductor
Datasheet
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NDD04N50Z N-Channel Power MOSFET 500 V, 2.7 W Features • Lo NDD04N50Z Datasheet
Recommendation Recommendation Datasheet NDD04N50Z Datasheet




NDD04N50Z
NDD04N50Z
N-Channel Power MOSFET
500 V, 2.7 W
Features
Low ON Resistance
Low Gate Charge
ESD DiodeProtected Gate
100% Avalanche Tested
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
Continuous Drain Current RqJC
Continuous Drain Current
RqJC, TA = 100°C
Pulsed Drain Current, VGS @ 10 V
Power Dissipation RqJC
GatetoSource Voltage
Single Pulse Avalanche Energy,
ID = 3.4 A
ESD (HBM) (JESD22A114)
Peak Diode Recovery
VDSS
ID
ID
IDM
PD
VGS
EAS
Vesd
dv/dt
500
3.0
1.9
12
61
±30
120
2800
4.5 (Note 1)
V
A
A
A
W
V
mJ
V
V/ns
Continuous Source Current
(Body Diode)
IS 3.4 A
Maximum Temperature for Soldering
Leads
TL
260 °C
Operating Junction and
Storage Temperature Range
TJ, Tstg
55 to 150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. ID v 3.4 A, di/dt 200 A/ms, VDD BVDSS, TJ 150°C.
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VDSS
500 V
RDS(on) (MAX) @ 1.5 A
2.7 W
NChannel
D (2)
G (1)
S (3)
4
4
1 23
IPAK
CASE 369D
STYLE 2
12
3
DPAK
CASE 369AA
STYLE 2
MARKING AND ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2011
September, 2011 Rev. 1
1
Publication Order Number:
NDD04N50Z/D



NDD04N50Z
NDD04N50Z
THERMAL RESISTANCE
Parameter
Symbol
JunctiontoCase (Drain)
JunctiontoAmbient Steady State
NDD04N50Z
(Note 3) NDD04N50Z
(Note 2) NDD04N50Z1
RqJC
RqJA
2. Insertion mounted
3. Surface mounted on FR4 board using 1sq. pad size, (Cu area = 1.127 in sq [2 oz] including traces).
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Test Conditions
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
Breakdown Voltage Temperature Coeffi-
cient
DraintoSource Leakage Current
BVDSS
DBVDSS/
DTJ
IDSS
VGS = 0 V, ID = 1 mA
Reference to 25°C,
ID = 1 mA
VDS = 500 V, VGS = 0 V
25°C
150°C
GatetoSource Forward Leakage
ON CHARACTERISTICS (Note 4)
Static DraintoSource
OnResistance
IGSS
RDS(on)
VGS = ±20 V
VGS = 10 V, ID = 1.5 A
Gate Threshold Voltage
VGS(th)
Forward Transconductance
gFS
DYNAMIC CHARACTERISTICS
Input Capacitance (Note 5)
Ciss
Output Capacitance (Note 5)
Coss
Reverse Transfer Capacitance (Note 5)
Crss
Total Gate Charge (Note 5)
Qg
GatetoSource Charge (Note 5)
Qgs
GatetoDrain (“Miller”) Charge (Note 5)
Qgd
Plateau Voltage
VGP
Gate Resistance
Rg
RESISTIVE SWITCHING CHARACTERISTICS
TurnOn Delay Time
td(on)
Rise Time
tr
TurnOff Delay Time
td(off)
Fall Time
tf
VDS = VGS, ID = 50 mA
VDS = 15 V, ID = 1.5 A
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
VDD = 250 V, ID = 3.4 A,
VGS = 10 V
VDD = 250 V, ID = 3.4 A,
VGS = 10 V, RG = 5 W
SOURCEDRAIN DIODE CHARACTERISTICS (TC = 25°C unless otherwise noted)
Diode Forward Voltage
VSD IS = 3.4 A, VGS = 0 V
Reverse Recovery Time
Reverse Recovery Charge
trr VGS = 0 V, VDD = 30 V
Qrr IS = 3.4 A, di/dt = 100 A/ms
4. Pulse Width 380 ms, Duty Cycle 2%.
5. Guaranteed by design.
Min
500
3.0
246
33
7.0
6.0
1.3
3.5
1.8
Value
2.0
40
80
Typ
0.6
2.3
2.1
308
43
9.0
12
2.6
6.1
6.6
5.4
9.0
9.0
16
10
240
0.9
Max
1.0
50
±10
2.7
4.5
370
53
11
18
4.0
7.0
16.2
1.6
Unit
°C/W
Unit
V
V/°C
mA
mA
W
V
S
pF
nC
V
W
ns
V
ns
mC
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