Power MOSFET. NTLJD3181PZ Datasheet

NTLJD3181PZ MOSFET. Datasheet pdf. Equivalent


Part NTLJD3181PZ
Description Power MOSFET
Feature NTLJD3181PZ Power MOSFET −20 V, −4.0 A, mCoolt Dual P−Channel, ESD, 2x2 mm WDFN Package Features •.
Manufacture ON Semiconductor
Datasheet
Download NTLJD3181PZ Datasheet


NTLJD3181PZ Power MOSFET −20 V, −4.0 A, mCoolt Dual P−Chann NTLJD3181PZ Datasheet
Recommendation Recommendation Datasheet NTLJD3181PZ Datasheet




NTLJD3181PZ
NTLJD3181PZ
Power MOSFET
20 V, 4.0 A, mCoolt Dual PChannel,
ESD, 2x2 mm WDFN Package
Features
WDFN 2x2 mm Package with Exposed Drain Pads for Excellent
Thermal Conduction
Lowest RDS(on) Solution in 2x2 mm Package
Footprint Same as SC88 Package
Low Profile (< 0.8 mm) for Easy Fit in Thin Environments
ESD Protected
This is a PbFree Device
Applications
Optimized for Battery and Load Management Applications in
Portable Equipment
LiIon Battery Charging and Protection Circuits
High Side Load Switch
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
DraintoSource Voltage
GatetoSource Voltage
Continuous Drain
Current (Note 1)
Steady
State
Power Dissipation
(Note 1)
t5s
Steady
State
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
t5s
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
TA = 25°C
TA = 85°C
TA = 25°C
VDSS
VGS
ID
PD
ID
PD
20
±8.0
3.2
2.3
4.0
1.5
2.3
2.2
1.6
0.71
V
V
A
W
A
W
Pulsed Drain Current
tp = 10 ms
IDM
Operating Junction and Storage Temperature TJ, TSTG
16
55 to
150
A
°C
Source Current (Body Diode) (Note 2)
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
IS
1.0
A
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size
of 30 mm2, 2 oz Cu.
© Semiconductor Components Industries, LLC, 2008
December, 2008 Rev. 0
1
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V(BR)DSS
20 V
RDS(on) MAX
100 mW @ 4.5 V
144 mW @ 2.5 V
200 mW @ 1.8 V
ID MAX (Note 1)
4.0 A
D1 D2
G1 G2
S1 S2
PCHANNEL MOSFET PCHANNEL MOSFET
D2 D1
MARKING
DIAGRAM
Pin 1
WDFN6
CASE 506AN
1
2
JEMG
6
5
3G 4
JE = Specific Device Code
M = Date Code
G = PbFree Package
(Note: Microdot may be in either location)
PIN CONNECTIONS
S1 1
D1
6 D1
G1 2
D2 3
D2
5 G2
4 S2
(Top View)
ORDERING INFORMATION
Device
Package
Shipping
NTLJD3181PZTAG WDFN6 3000/Tape & Reel
(PbFree)
NTLJD3181PZTBG WDFN6 3000/Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NTLJD3181PZ/D



NTLJD3181PZ
NTLJD3181PZ
THERMAL RESISTANCE RATINGS
Parameter
Symbol
SINGLE OPERATION (SELFHEATED)
JunctiontoAmbient – Steady State (Note 3)
JunctiontoAmbient – Steady State Min Pad (Note 4)
JunctiontoAmbient – t 5 s (Note 3)
DUAL OPERATION (EQUALLY HEATED)
RqJA
RqJA
RqJA
JunctiontoAmbient – Steady State (Note 3)
RqJA
JunctiontoAmbient – Steady State Min Pad (Note 4)
RqJA
JunctiontoAmbient – t 5 s (Note 3)
RqJA
3. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
4. Surface Mounted on FR4 Board using the minimum recommended pad size (30 mm2, 2 oz Cu).
Max
83
177
54
58
133
40
Unit
°C/W
°C/W
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2







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