NTMD6601NR2G
Power MOSFET
80 V, 2.2 A, Dual N-Channel, SO-8
Features
ăLow RDS(on) to Minimize Conduction Losses ăLow Capacitance to Minimize Driver Losses ăOptimized Gate Charge to Minimize Switching Losses ăDual SO-8 Surface Mount Package Saves Board Space ăThis is a Pb-Free Device
Applications
ăLCD Displays
MAXIMUM RATINGS (TJ = 25°C unless other...
