Power MOSFET. NTMD6601NR2G Datasheet

NTMD6601NR2G MOSFET. Datasheet pdf. Equivalent


Part NTMD6601NR2G
Description Power MOSFET
Feature NTMD6601NR2G Power MOSFET 80 V, 2.2 A, Dual N-Channel, SO-8 Features •ăLow RDS(on) to Minimize Con.
Manufacture ON Semiconductor
Datasheet
Download NTMD6601NR2G Datasheet


NTMD6601NR2G Power MOSFET 80 V, 2.2 A, Dual N-Channel, SO-8 NTMD6601NR2G Datasheet
Recommendation Recommendation Datasheet NTMD6601NR2G Datasheet




NTMD6601NR2G
NTMD6601NR2G
Power MOSFET
80 V, 2.2 A, Dual N-Channel, SO-8
Features
ăLow RDS(on) to Minimize Conduction Losses
ăLow Capacitance to Minimize Driver Losses
ăOptimized Gate Charge to Minimize Switching Losses
ăDual SO-8 Surface Mount Package Saves Board Space
ăThis is a Pb-Free Device
Applications
ăLCD Displays
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Rating
Symbol Value
Drain-to-Source Voltage
Gate-to-Source Voltage - Continuous
Continuous Drain
Current RqJA (Note 1)
Power Dissipation
RqJA (Note 1)
Continuous Drain
Current RqJA (Note 2)
Power Dissipation
RqJA (Note 2)
Continuous Drain
Current RqJA t < 5 s
(Note 1)
TA = 25°C
TA = 70°C
TA = 25°C
Steady
State
TA = 25°C
TA = 70°C
TA = 25°C
TA = 25°C
TA = 70°C
VDSS
VGS
ID
PD
ID
PD
ID
80
±15
1.4
1.2
1.0
1.1
0.9
0.6
2.2
1.7
Pulsed Drain Current
TA = 25°C,
tp = 10 ms
Operating Junction and Storage Temperature
IDM
TJ, TSTG
9.0
-55 to
+150
Source Current (Body Diode)
Single Pulse Drain-to-Source Avalanche
Energy TJ = 25C, VDD = 50 V, VGS = 10 V,
IL = 7.0 Apk, L = 1.0 mH, RG = 25 W
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
IS
EAS
1.3
25
TL 260
Unit
V
V
A
W
A
W
A
A
°C
A
mJ
°C
THERMAL RESISTANCE RATINGS
Rating
Symbol Max Unit
Junction-to-Ambient – Steady State (Note 1)
RqJA
120
Junction-to-Ambient – t5 s (Note 1)
Junction-to-FOOT (Drain)
RqJA
RqJF
48
°C/W
40
Junction-to-Ambient – Steady State (Note 2)
RqJA
200
1. Surface-mounted on 2 inch sq FR4 board using 1 inch sq pad size, 1 oz Cu.
2. Surface-mounted on FR4 board using the minimum recommended pad size.
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V(BR)DSS
80 V
RDS(on) Max
215 mW @ 10 V
245 mW @ 4.5 V
ID Max
2.2 A
N-Channel
D
G
S
MARKING DIAGRAM
& PIN ASSIGNMENT
8
1
SO-8
CASE 751
STYLE 11
D1 D1 D2 D2
8
6601N
AYWW
G
1
S1 G1 S2 G2
6601N = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb-Free Package
ORDERING INFORMATION
Device
Package
Shipping
NTMD6601NR2G SO-8 2500/Tape & Reel
(Pb-Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
©Ă Semiconductor Components Industries, LLC, 2008
February, 2008 - Rev. 0
1
Publication Order Number:
NTMD6601N/D



NTMD6601NR2G
NTMD6601NR2G
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Test Condition
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Drain-to-Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V, ID = 250 mA
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Current
ON CHARACTERISTICS (Note 3)
IDSS
IGSS
VGS = 0 V,
VDS = 80 V
TJ = 25°C
TJ = 125°C
VDS = 0 V, VGS = ±15 V
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)
VGS(TH)/TJ
VGS = VDS, ID = 250 mA
Drain-to-Source On Resistance
RDS(on)
CHARGES, CAPACITANCES AND GATE RESISTANCE
VGS = 10 V
VGS = 5.0 V
ID = 2.2 A
ID = 1.0 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge
SWITCHING CHARACTERISTICS (Note 4)
CISS
COSS
CRSS
QG(TOT)
QG(TH)
QGS
QGD
QG(TOT)
VGS = 0 V, f = 1.0 MHz, VDS = 25 V
VGS = 5.0 V, VDS = 40 V, ID = 1.0 A
VGS = 10 V, VDS = 40 V, ID = 1.0 A
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
BODY - DRAIN DIODE RATINGS (Note 3)
td(ON)
tr
td(OFF)
tf
td(ON)
tr
td(OFF)
tf
VGS = 4.5 V, VDD = 40 V,
ID = 1.0 A, RG = 27 W
VGS = 10 V, VDD = 40 V,
ID = 2.5 A, RG = 47 W
Forward Diode Voltage
VSD
VGS = 0 V
TJ = 25°C
ID = 1.0 A
TJ = 150°C
Reverse Recovery Time
tRR
Charge Time
Discharge Time
Ta VGS = 0 V, dIS/dt = 100 A/ms,
Tb IS = 1.0 A
Reverse Recovery Time
QRR
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
Min
80
1.0
Typ
99.8
1.9
4.6
190
215
220
55
16
5.0
0.4
1.0
2.75
9.0
21
62
52
50
15
95
50
105
0.8
0.6
44
21
23
43
Max Unit
1.0
25
±100
V
mV/°C
mA
nA
3.0 V
mV/°C
215
mW
245
400
100 pF
30
9.0
nC
15 nC
35
105
ns
85
85
ns
1.0 V
ns
86 nC
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