Power MOSFET. MMDF2P02E Datasheet

MMDF2P02E MOSFET. Datasheet pdf. Equivalent


Part MMDF2P02E
Description Power MOSFET
Feature MMDF2P02E Power MOSFET 2 Amps, 25 Volts P−Channel SO−8, Dual These miniature surface mount MOSFETs.
Manufacture ON Semiconductor
Datasheet
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MMDF2P02E Power MOSFET 2 Amps, 25 Volts P−Channel SO−8, Dua MMDF2P02E Datasheet
Recommendation Recommendation Datasheet MMDF2P02E Datasheet




MMDF2P02E
MMDF2P02E
Power MOSFET
2 Amps, 25 Volts
PChannel SO8, Dual
These miniature surface mount MOSFETs feature ultra low RDS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
draintosource diode has a low reverse recovery time. These devices
are designed for use in low voltage, high speed switching applications
where power efficiency is important. Typical applications are dcdc
converters, and power management in portable and battery powered
products such as computers, printers, cellular and cordless phones.
They can also be used for low voltage motor controls in mass storage
products such as disk drives and tape drives. The avalanche energy is
specified to eliminate the guesswork in designs where inductive loads
are switched and offer additional safety margin against unexpected
voltage transients.
Features
Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Logic Level Gate Drive Can Be Driven by Logic ICs
Miniature SO8 Surface Mount Package Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, with Soft Recovery
IDSS Specified at Elevated Temperatures
Avalanche Energy Specified
Mounting Information for SO8 Package Provided
This is a PbFree Device
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) (Note 1)
Rating
Symbol Value
Unit
DraintoSource Voltage
GatetoSource Voltage Continuous
Drain Current Continuous @ TA = 25°C
Drain Current Continuous @ TA = 100°C
Drain Current Single Pulse (tp 10 ms)
Total Power Dissipation @ TA = 25°C
(Note 2)
Derate above 25°C
VDSS
VGS
ID
ID
IDM
PD
25 Vdc
± 20 Vdc
2.5 Adc
1.7
13 Apk
2.0 W
16 mW/°C
Operating and Storage Temperature Range
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25°C
(VDD = 20 Vdc, VGS = 10 Vdc, Peak
IL = 7.0 Apk, L = 10 mH, RG = 25 W)
Thermal Resistance, JunctiontoAmbient
(Note 2)
TJ, Tstg
EAS
RqJA
55 to 150
245
62.5
°C
mJ
°C/W
Maximum Lead Temperature for Soldering
Purposes, 0.0625from case for 10 sec.
TL
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Negative sign for PChannel device omitted for clarity.
2. Mounted on 2square FR4 board (1sq. 2 oz. Cu 0.06thick single sided) with
one die operating, 10 sec. max.
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2 AMPERES, 25 VOLTS
RDS(on) = 250 mW
PChannel
D
G
S
8
1
SO8, Dual
CASE 751
STYLE 11
MARKING
DIAGRAM
8
F2PO2
AYWW G
G
1
F2P02 = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
Source1
Gate1
Source2
Gate2
18
27
36
45
Top View
Drain1
Drain1
Drain2
Drain2
ORDERING INFORMATION
Device
Package
Shipping
MMDF2P02ER2G SO8 2500 Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
October, 2011 Rev. 9
1
Publication Order Number:
MMDF2P02E/D



MMDF2P02E
MMDF2P02E
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Note 3)
Characteristic
Symbol
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(VGS = 0 Vdc, ID = 250 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)
GateBody Leakage Current (VGS = ± 20 Vdc, VDS = 0)
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
(VDS = VGS, ID = 250 mAdc)
Temperature Coefficient (Negative)
IDSS
IGSS
VGS(th)
Static DraintoSource OnResistance
(VGS = 10 Vdc, ID = 2.0 Adc)
(VGS = 4.5 Vdc, ID = 1.0 Adc)
Forward Transconductance (VDS = 3.0 Vdc, ID = 1.0 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 16 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 5)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 10 Vdc, ID = 2.0 Adc,
VGS = 5.0 Vdc, RG = 6.0 W)
Fall Time
TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 10 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc, RG = 6.0 W)
Fall Time
Gate Charge
(VDS = 16 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc)
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage (Note 4)
(IS = 2.0 Adc, VGS = 0 Vdc)
Reverse Recovery Time
See Figure 11
(IS = 2.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms)
Reverse Recovery Storage Charge
3. Negative sign for PChannel device omitted for clarity.
4. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
5. Switching characteristics are independent of operating junction temperature.
RDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
trr
ta
tb
QRR
Min Typ Max Unit
25
2.2
Vdc
mV/°C
mAdc
− − 1.0
− − 10
− − 100 nAdc
Vdc
1.0 2.0 3.0
3.8
W
0.19 0.25
0.3 0.4
1.0 2.8
Mhos
340 475
pF
220 300
75 150
20 40 ns
40 80
53 106
41 82
13 26
29 58
30 60
28 56
10 15 nC
1.0
3.5
3.0
1.5 2.0 Vdc
32 64 ns
19
12
0.035
mC
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