NTHD4502N

NTHD4502N MOSFET – Power, Dual, N-Channel, ChipFET 30 V, 3.9 A Features Planar Technology Device Offers Low RDS(on) and Fast Switching Speed Leadless ChipFET Package has 40% Smaller Footprint than TSOP−6. Ideal Device for Applications Where Board Space is at a Premium. ChipFET Package Exhibits Excellent Thermal Capabilities. Ideal for Applications Where Heat Transfer is Required. These Devices are Pb−Free and are RoHS Compliant Applications DC−DC Buck or Boost Converters Low Side Switching Optimized for Battery and Low Side Switching Applications in Computing and Portable Equipment MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) Steady State Power Dissipation (Note 1) Continuous Drain Current (Note 2) Power Dissipation (Note 2) t≤5s Steady State t≤5s Steady State TA = 25°C TA = 85°C TA = 25°C TA = 25°C TA = 25°C TA = 85°C TA = 25°C VDSS VGS ID PD ID PD 30 ±20 2.9 2.1 3.9 1.13 2.1 2.2 1.6 0.64 V V A W A W Pulsed Drain Current tp = 10 ms ESD Capability (Note 3) C = 100 pF, RS = 1500 W Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) IDM ESD− HBM TJ, TSTG IS TL 12 125 −55 to 150 2.5 260 A V °C A °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Opera...