Signal MOSFET. NTZD5110N Datasheet

NTZD5110N MOSFET. Datasheet pdf. Equivalent


Part NTZD5110N
Description Small Signal MOSFET
Feature NTZD5110N Small Signal MOSFET 60 V, 310 mA, Dual N−Channel with ESD Protection, SOT−563 Features • .
Manufacture ON Semiconductor
Datasheet
Download NTZD5110N Datasheet


NTZD5110N Small Signal MOSFET 60 V, 310 mA, Dual N−Channel NTZD5110N Datasheet
Recommendation Recommendation Datasheet NTZD5110N Datasheet




NTZD5110N
NTZD5110N
Small Signal MOSFET
60 V, 310 mA, Dual N−Channel
with ESD Protection, SOT−563
Features
Low RDS(on) Improving System Efficiency
Low Threshold Voltage
ESD Protected Gate
Small Footprint 1.6 x 1.6 mm
These are Pb−Free Devices
Applications
Load/Power Switches
Driver Circuits: Relays, Lamps, Displays, Memories, etc.
Battery Management/Battery Operated Systems
Cell Phones, Digital Cameras, PDAs, Pagers, etc.
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Parameter
Symbol Value
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady TA = 25°C
State TA = 85°C
Steady State
VDSS
VGS
ID
PD
60
±20
294
212
250
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
TA = 25°C
tv5 s
TA = 85°C
tv5s
ID
PD
310
225
280
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
IDM
TJ,
TSTG
IS
TL
590
−55 to
150
350
260
Gate−Source ESD Rating (HBM, Method 3015) ESD 1800
Unit
V
V
mA
mW
mA
mW
mA
°C
mA
°C
V
THERMAL RESISTANCE RATINGS
Parameter
Junction−to−Ambient – Steady State (Note 1)
Junction−to−Ambient – t v 5 s (Note 1)
Symbol
RqJA
Max
500
447
Unit
°C/W
Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu. area = 1.127 in sq [1 oz] including traces).
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V(BR)DSS
60
RDS(on) MAX
1.6 W @ 10 V
2.5 W @ 4.5 V
ID Max
310 mA
D1 D2
G1 G2
N−Channel
S1
MOSFET
S2
6
1
SOT−563
CASE 463A
MARKING
DIAGRAM
S7MG
G
S7 = Specific Device Code
M = Date Code
(Note: Microdot may be in either location)
PINOUT: SOT−563
S1 1
6 D1
G1 2
5 G2
D2 3
Top View
4 S2
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
© Semiconductor Components Industries, LLC, 2013
December, 2013 − Rev. 6
1
Publication Order Number:
NTZD5110N/D



NTZD5110N
NTZD5110N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted.)
Parameter
Symbol
Test Condition
Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V, ID = 250 mA
60 −
− 71
−V
− mV/°C
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 3)
IDSS
IGSS
VGS = 0 V
VDS = 60 V
TJ = 25°C
TJ = 125°C
VGS = 0 V
VDS = 50 V
TJ = 25°C
TJ = 85°C
VDS = 0 V, VGS = "20 V
VDS = 0 V, VGS = "10 V
VDS = 0 V, VGS = "5.0 V
− 1.0 mA
− 500
− 100 nA
− 100
"10
mA
− 450 nA
− 150 nA
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
Forward Transconductance
CHARGES AND CAPACITANCES
VGS(TH)
VGS(TH)/TJ
RDS(on)
gFS
VGS = VDS, ID = 250 mA
VGS = 10 V, ID = 500 mA
VGS = 4.5 V, ID = 200 mA
VDS = 5.0 V, ID = 200 mA
1.0 − 2.5 V
− 4.0 − mV/°C
− 1.19 1.6
W
− 1.33 2.5
− 80 −
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
SWITCHING CHARACTERISTICS (Note 4)
CISS
COSS
CRSS
QG(TOT)
QG(TH)
QGS
QGD
VGS = 0 V, f = 1.0 MHz,
VDS = 20 V
VGS = 4.5 V, VDS = 10 V;
ID = 200 mA
− 24.5 −
− 4.2 −
− 2.2 −
− 0.7 −
− 0.1 −
− 0.3 −
− 0.1 −
pF
nC
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
td(ON)
tr
td(OFF)
tf
VGS = 10 V, VDD = 30 V,
ID = 200 mA, RG = 10 W
− 12 −
− 7.3 −
− 63.7 −
− 30.6 −
ns
Forward Diode Voltage
VSD
VGS = 0 V,
IS = 200 mA
TJ = 25°C
TJ = 85°C
0.8 1.2
0.7 −
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Surface−mounted on FR4 board using 1 in. sq. pad size (Cu. area = 1.127 in sq [1 oz] including traces).
3. Pulse Test: pulse width v 300 ms, duty cycle v2%.
4. Switching characteristics are independent of operating junction temperatures.
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