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NTMC1300R2 Dataheets PDF



Part Number NTMC1300R2
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Power MOSFET
Datasheet NTMC1300R2 DatasheetNTMC1300R2 Datasheet (PDF)

NTMC1300R2 Power MOSFET 3 Amps, 30 Volts Complementary SO−8 Dual Features • Ultra Low RDS(on) • Higher Efficiency Extending Battery Life • Miniature SO−8 Surface Mount Package Applications • DC−DC Converters • Power Management in Portable and Battery Powered Products, i.e.: Computers, Printers, Cellular and Cordless Phones • Low Voltage Motor Controls in Mass Storage Products, i.e.: Disk Drives, Tape Drives MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−.

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NTMC1300R2 Power MOSFET 3 Amps, 30 Volts Complementary SO−8 Dual Features • Ultra Low RDS(on) • Higher Efficiency Extending Battery Life • Miniature SO−8 Surface Mount Package Applications • DC−DC Converters • Power Management in Portable and Battery Powered Products, i.e.: Computers, Printers, Cellular and Cordless Phones • Low Voltage Motor Controls in Mass Storage Products, i.e.: Disk Drives, Tape Drives MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Drain Current − Continuous (Note 1) N−Channel P−Channel VDSS VGS ID 30 V ±20 V Adc 2.2 1.8 Drain Current − Continuous (Note 2) N−Channel P−Channel ID Adc 2.8 2.3 Drain Current − Continuous (Note 3) N−Channel P−Channel ID Adc 3.6 3.0 Drain Current − Pulsed N−Channel P−Channel IDM Apk 8.5 7.0 Total Power Dissipation @ TA = 25°C (Note 3) PD 2.0 W Operating and Storage Temperature Range TJ, Tstg −65 to 150 °C Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 20 Vdc, VGS = 10 Vdc, IL = 2.45 Apk, L = 25 mH, RG = 25 W) Thermal Resistance Junction−to−Ambient (Note 1) Junction−to−Ambient (Note 2) Junction−to−Ambient (Note 3) EAS RqJA 75 mJ 178.5 106 62.5 °C/W Maximum Lead Temperature for Soldering Purposes for 10 Seconds TL 260 °C 1. When surface mounted to an FR−4 board using minimum recommended pad size, (Cu Area 0.412 in2), Steady State. 2. When surface mounted to an FR−4 board using 1″ pad size, (Cu Area 0.412 in2), Steady State. 3. When surface mounted to an FR−4 board using 1″ pad size, (Cu Area 0.412 in2), T ≤ 10 Seconds. http://onsemi.com 3 AMPERES, 30 VOLTS 73 mW @ VGS = 10 V (Typ) (N−Channel) 100 mW @ VGS = 10 V (Typ) (P−Channel) N−Channel D1 P−Channel D2 G1 G2 S1 S2 MARKING DIAGRAM 8 SO−8, Dual CASE 751 STYLE 11 EC1300 LYWW 1 EC1300 L Y WW = Device Code = Location Code = Year = Work Week PIN ASSIGNMENT Source−1 Gate−1 Source−2 Gate−2 18 27 36 45 (Top View) Drain−1 Drain−1 Drain−2 Drain−2 ORDERING INFORMATION Device Package Shipping NTMC1300R2 SO−8 2500/Tape & Reel © Semiconductor Components Industries, LLC, 2006 August, 2006 − Rev. 1 1 Publication Order Number: NTMC1300R2/D NTMC1300R2 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Polarity OFF CHARACTERISTICS Drain−Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 μA) Zero Gate Voltage Drain Current (VGS = 0 Vdc, VDS = 30 Vdc, TJ = 25°C) Gate−Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (Notes 4 & 6) Gate Threshold Voltage (VDS = VGS, ID = 250 μAdc) Static Drain−to−Source On−State Resistance (VGS = 10 Vdc, ID = 3.0 Adc) Static Drain−to−Source On−State Resistance (VGS = 4.5 Vdc, ID = 1.5 Adc) Forward Transconductance (VDS = 3.0 Vdc, ID = 1.5 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance (VDS = 20 Vdc, VGS = 0 Vdc, f = 1.0 MHz) V(BR)DSS IDSS IGSS VGS(th) RDS(on) RDS(on).


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