Document
NTMC1300R2
Power MOSFET 3 Amps, 30 Volts
Complementary SO−8 Dual
Features
• Ultra Low RDS(on) • Higher Efficiency Extending Battery Life • Miniature SO−8 Surface Mount Package
Applications
• DC−DC Converters • Power Management in Portable and Battery Powered Products, i.e.:
Computers, Printers, Cellular and Cordless Phones
• Low Voltage Motor Controls in Mass Storage Products, i.e.: Disk
Drives, Tape Drives
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Drain Current − Continuous (Note 1)
N−Channel P−Channel
VDSS VGS ID
30 V ±20 V
Adc 2.2 1.8
Drain Current − Continuous (Note 2) N−Channel P−Channel
ID Adc 2.8 2.3
Drain Current − Continuous (Note 3) N−Channel P−Channel
ID
Adc 3.6
3.0
Drain Current − Pulsed N−Channel P−Channel
IDM Apk 8.5 7.0
Total Power Dissipation @ TA = 25°C (Note 3)
PD 2.0 W
Operating and Storage Temperature Range
TJ, Tstg
−65 to 150
°C
Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 20 Vdc, VGS = 10 Vdc, IL = 2.45 Apk, L = 25 mH, RG = 25 W) Thermal Resistance
Junction−to−Ambient (Note 1) Junction−to−Ambient (Note 2) Junction−to−Ambient (Note 3)
EAS RqJA
75 mJ
178.5 106 62.5
°C/W
Maximum Lead Temperature for Soldering Purposes for 10 Seconds
TL 260 °C
1. When surface mounted to an FR−4 board using minimum recommended pad size, (Cu Area 0.412 in2), Steady State.
2. When surface mounted to an FR−4 board using 1″ pad size, (Cu Area 0.412 in2), Steady State.
3. When surface mounted to an FR−4 board using 1″ pad size, (Cu Area 0.412 in2), T ≤ 10 Seconds.
http://onsemi.com
3 AMPERES, 30 VOLTS 73 mW @ VGS = 10 V (Typ)
(N−Channel) 100 mW @ VGS = 10 V (Typ)
(P−Channel)
N−Channel D1
P−Channel D2
G1 G2
S1 S2
MARKING DIAGRAM
8
SO−8, Dual CASE 751 STYLE 11
EC1300 LYWW
1
EC1300 L Y WW
= Device Code = Location Code = Year = Work Week
PIN ASSIGNMENT
Source−1 Gate−1
Source−2 Gate−2
18 27 36 45 (Top View)
Drain−1 Drain−1 Drain−2 Drain−2
ORDERING INFORMATION
Device
Package
Shipping
NTMC1300R2
SO−8 2500/Tape & Reel
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 1
1
Publication Order Number: NTMC1300R2/D
NTMC1300R2
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol Polarity
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 μA)
Zero Gate Voltage Drain Current (VGS = 0 Vdc, VDS = 30 Vdc, TJ = 25°C)
Gate−Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Notes 4 & 6)
Gate Threshold Voltage (VDS = VGS, ID = 250 μAdc)
Static Drain−to−Source On−State Resistance (VGS = 10 Vdc, ID = 3.0 Adc)
Static Drain−to−Source On−State Resistance (VGS = 4.5 Vdc, ID = 1.5 Adc)
Forward Transconductance (VDS = 3.0 Vdc, ID = 1.5 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 20 Vdc, VGS = 0 Vdc, f = 1.0 MHz)
V(BR)DSS IDSS IGSS
VGS(th) RDS(on) RDS(on).