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Power MOSFET. NTHC5513 Datasheet

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Power MOSFET. NTHC5513 Datasheet






NTHC5513 MOSFET. Datasheet pdf. Equivalent




NTHC5513 MOSFET. Datasheet pdf. Equivalent





Part

NTHC5513

Description

Power MOSFET

Manufacture

ON Semiconductor

Datasheet
Download NTHC5513 Datasheet


ON Semiconductor NTHC5513

NTHC5513; NTHC5513 MOSFET – Power, Complementar y ChipFET 20 V, +3.9 A / -3.0 A Featur es • Complementary N−Channel and P Channel MOSFET • Small Size, 40% Sm aller than TSOP−6 Package • Leadles s SMD Package Featuring Complementary P air • ChipFET Package Provides Great Thermal Characteristics Similar to Larg er Packages • Low RDS(on) in a ChipFE T Package for High Efficiency Perfor.


ON Semiconductor NTHC5513

mance • Low Profile (< 1.10 mm) Allows Placement in Extremely Thin Environmen ts Such as Portable Electronics • The se Devices are Pb−Free, Halogen Free/ BFR Free and are RoHS Compliant Applica tions • Load Switch Applications Requ iring Level Shift • DC−DC Conversio n Circuits • Drive Small Brushless DC Motors • Designed for Power Manageme nt Applications in Portable, Batte.


ON Semiconductor NTHC5513

ry Powered Products MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Param eter Symbol Value Drain−to−Source Voltage Gate−to−Source Voltage C ontinuous Drain Current (Note 1) N−C h Steady State TA = 25°C TA = 85°C VDSS VGS ID 20 ±12 2.9 2.1 tv5 P−C h Steady State TA = 25°C TA = 25°C T A = 85°C ID 3.9 −2.2 −1.6 Pulse d Drain Current (Note 1) tv5 N−Ch P−Ch .



Part

NTHC5513

Description

Power MOSFET

Manufacture

ON Semiconductor

Datasheet
Download NTHC5513 Datasheet




 NTHC5513
NTHC5513
MOSFET – Power,
Complementary ChipFET
20 V, +3.9 A / -3.0 A
Features
Complementary NChannel and PChannel MOSFET
Small Size, 40% Smaller than TSOP6 Package
Leadless SMD Package Featuring Complementary Pair
ChipFET Package Provides Great Thermal Characteristics Similar to
Larger Packages
Low RDS(on) in a ChipFET Package for High Efficiency Performance
Low Profile (< 1.10 mm) Allows Placement in Extremely Thin
Environments Such as Portable Electronics
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
Applications
Load Switch Applications Requiring Level Shift
DCDC Conversion Circuits
Drive Small Brushless DC Motors
Designed for Power Management Applications in Portable, Battery
Powered Products
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
DraintoSource Voltage
GatetoSource Voltage
Continuous Drain
Current (Note 1)
NCh
Steady
State
TA = 25°C
TA = 85°C
VDSS
VGS
ID
20
±12
2.9
2.1
tv5
PCh
Steady
State
TA = 25°C
TA = 25°C
TA = 85°C
ID
3.9
2.2
1.6
Pulsed Drain Current
(Note 1)
tv5
NCh
PCh
TA = 25°C
t = 10 ms
t = 10 ms
IDM
3.0
12
9.0
Power Dissipation
(Note 1)
Steady
State
TA = 25°C
PD
1.1
Unit
V
V
A
A
A
W
tv5
Operating Junction and Storage
Temperature
TA = 25°C
TJ,
TSTG
2.1
55 to
150
°C
Lead Temperature for Soldering Purposes
(1/8” from case for 10 seconds)
TL 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface Mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
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V(BR)DSS
NChannel
20 V
PChannel
20 V
RDS(on) TYP
60 mW @ 4.5 V
80 mW @ 2.5 V
130 mW @ 4.5 V
200 mW @ 2.5 V
ID MAX
3.9 A
3.0 A
D1 S2
G1 G2
S1
NChannel MOSFET
D2
PChannel MOSFET
ChipFET
CASE 1206A
STYLE 2
PIN
CONNECTIONS
MARKING
DIAGRAM
D1 8
D1 7
D2 6
D2 5
1 S1
2 G1
3 S2
4 G2
1
2
3
4
8
7
6
5
C1 = Specific Device Code
M = Month Code
G = PbFree Package
ORDERING INFORMATION
Device
Package
Shipping
NTHC5513T1G ChipFET
(PbFree)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2016
May, 2019Rev. 5
1
Publication Order Number:
NTHC5513/D





 NTHC5513
NTHC5513
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
JunctiontoAmbient (Note 1)
Steady State
tv5
TA = 25°C
RqJA
2. Surface Mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
110
60
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol N/P
Test Conditions
Min Typ Max Unit
OFF CHARACTERISTICS (Note 3)
DraintoSource Breakdown Voltage
Zero Gate Voltage Drain Current
GatetoSource Leakage Current
ON CHARACTERISTICS (Note 3)
V(BR)DSS
IDSS
IGSS
N
P
N
P
N
P
VGS = 0 V
ID = 250 mA
ID = 250 mA
VGS = 0 V, VDS = 16 V
VGS = 0 V, VDS = 16 V
VGS = 0 V, VDS = 16 V, TJ = 85 °C
VGS = 0 V, VDS = 16 V, TJ = 85 °C
VDS = 0 V, VGS = ±12 V
20
20
V
1.0
1.0
5
5
±100
mA
nA
Gate Threshold Voltage
DraintoSource On Resistance
Forward Transconductance
CHARGES AND CAPACITANCES
VGS(TH)
RDS(on)
gFS
N
P
N
P
N
P
N
P
VGS = VDS
ID = 250 mA
ID = 250 mA
VGS = 4.5 V , ID = 2.9 A
VGS = 4.5 V , ID = 2.2 A
VGS = 2.5 V , ID = 2.3 A
VGS = 2.5 V, ID = 1.7 A
VDS = 10 V, ID = 2.9A
VDS = 10 V , ID = 2.2 A
0.6 1.2
0.6 1.2
0.058 0.080
0.130 0.155
0.077 0.115
0.200 0.240
6.0
6.0
V
W
S
Input Capacitance
CISS
N
VDS = 10 V 180 pF
P
VDS = 10 V
185
Output Capacitance
COSS
N
P
f = 1 MHz, VGS = 0 V
VDS = 10 V
VDS = 10 V
80
95
Reverse Transfer Capacitance
CRSS
N
VDS = 10 V
25
P
VDS = 10 V
30
Total Gate Charge
QG(TOT)
N
VGS = 4.5 V, VDS = 10 V, ID = 2.9 A
2.6 4.0 nC
P VGS = 4.5 V, VDS = 10 V, ID = 2.2 A
3.0 6.0
GatetoSource Gate Charge
QGS N VGS = 4.5 V, VDS = 10 V, ID = 2.9 A
0.6
P VGS = 4.5 V, VDS = 10 V, ID = 2.2 A
0.5
GatetoDrain “Miller” Charge
QGD N VGS = 4.5 V, VDS = 10 V, ID = 2.9 A
0.7
P VGS = 4.5 V, VDS = 10 V, ID = 2.2 A
0.9
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width v 250 ms, Duty Cycle v 2%.
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2





 NTHC5513
NTHC5513
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol N/P
Test Conditions
Min Typ Max Unit
SWITCHING CHARACTERISTICS (Note 4)
TurnOn Delay Time
td(ON)
Rise Time
tr
TurnOff Delay Time
td(OFF)
Fall Time
tf
TurnOn Delay Time
td(ON)
Rise Time
tr
TurnOff Delay Time
td(OFF)
Fall Time
tf
DRAINSOURCE DIODE CHARACTERISTICS
N VDD = 16 V, VGS = 4.5 V, ID = 2.9 A,
RG = 2.5 W
P
VDD = 16 V, VGS = 4.5 V, ID = 2.2 A,
RG = 2.5 W
5.0 10 ns
9.0 18
10 20
3.0 6.0
7.0 12
13 25
33 50
27 40
Forward Diode Voltage (Note 5)
VSD
N
P
VGS = 0 V
IS = 2.6 A
IS = 2.1 A
0.8 1.15
0.8 1.15
V
Reverse Recovery Time (Note 4)
tRR N
IS = 1.5 A
12.5
ns
P
IS = 1.5 A
32
Charge Time
ta N
IS = 1.5 A
9.0
Discharge Time
P VGS = 0 V,
IS = 1.5 A
tb N dIS / dt = 100 A/ms IS = 1.5 A
10
3.5
P
IS = 1.5 A
22
Reverse Recovery Charge
QRR
N
IS = 1.5 A
6.0 nC
P
IS = 1.5 A
15
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Switching characteristics are independent of operating junction temperatures.
5. Pulse Test: Pulse Width v 250 ms, Duty Cycle v 2%.
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3



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