Power MOSFET. MMDF2P02HD Datasheet

MMDF2P02HD MOSFET. Datasheet pdf. Equivalent


Part MMDF2P02HD
Description Power MOSFET
Feature MMDF2P02HD Power MOSFET 2 Amps, 20 Volts P−Channel SO−8, Dual These miniature surface mount MOSFET.
Manufacture ON Semiconductor
Datasheet
Download MMDF2P02HD Datasheet


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MMDF2P02HD Power MOSFET 2 Amps, 20 Volts P−Channel SO−8, Du MMDF2P02HD Datasheet
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MMDF2P02HD
MMDF2P02HD
Power MOSFET
2 Amps, 20 Volts
PChannel SO8, Dual
These miniature surface mount MOSFETs feature ultra low RDS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
draintosource diode has a very low reverse recovery time. These
devices are designed for use in low voltage, high speed switching
applications where power efficiency is important. Typical applications
are dcdc converters, and power management in portable and battery
powered products such as computers, printers, cellular and cordless
phones. They can also be used for low voltage motor controls in mass
storage products such as disk drives and tape drives. The avalanche
energy is specified to eliminate the guesswork in designs where
inductive loads are switched and offer additional safety margin against
unexpected voltage transients.
Features
Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Logic Level Gate Drive Can Be Driven by Logic ICs
Miniature SO8 Surface Mount Package Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
IDSS Specified at Elevated Temperature
Avalanche Energy Specified
Mounting Information for SO8 Package Provided
This is a PbFree Device
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) (Note 1)
Rating
Symbol Value Unit
DraintoSource Voltage
DraintoGate Voltage (RGS = 1.0 MW)
GatetoSource Voltage Continuous
Drain
Drain
Drain
Current
Current
Current
CCSioonnngttliiennuuPoouuulssse@@(tpTTAA
= 25°C
= 100°C
10 ms)
Total Power Dissipation, TA = 25°C (Note 2)
Operating and Storage Temperature Range
Single Pulse DraintoSource Avalanche
EVL nG=eS1rg=8y5m.0HS,VtRadrcGt,in=IgL2=T5JW6=.)025A°pCk,(VDD = 20 Vdc,
VDSS
VDGR
VGS
IDIIDDM
PD
TJ, Tstg
EAS
20
20
± 20
3.3
2.1
20
2.0
55 to 150
324
Vdc
Vdc
Vdc
Adc
Apk
W
°C
mJ
Thermal Resistance, JunctiontoAmbient
(Note 2)
RqJA
62.5 °C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8from case for 10 seconds
TL
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Negative sign for PChannel device omitted for clarity.
2. Mounted on 2square FR4 board (1sq. 2 oz. Cu 0.06thick single sided) with
one die operating, 10 sec. max.
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2 AMPERES, 20 VOLTS
RDS(on) = 160 mW
PChannel
D
G
8
1
S
SO8, DUAL
CASE 751
STYLE 11
MARKING
DIAGRAM
8
D2P02
AYWWG
G
1
D2P02 = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
Source1
Gate1
Source2
Gate2
1 8 Drain1
2 7 Drain1
3 6 Drain2
4 5 Drain2
ORDERING INFORMATION
Device
Package
Shipping
MMDF2P02HDR2G SO8 2500 Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
October, 2011 Rev. 8
1
Publication Order Number:
MMDF2P02HD/D



MMDF2P02HD
MMDF2P02HD
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Note 3)
Characteristic
Symbol
OFF CHARACTERISTICS
DrainSource Breakdown Voltage
(VGS = 0 Vdc, ID = 250 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)
GateBody Leakage Current (VGS = ± 20 Vdc, VDS = 0)
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
(VDS = VGS, ID = 250 mAdc)
Temperature Coefficient (Negative)
IDSS
IGSS
VGS(th)
Static DraintoSource OnResistance
(VGS = 10 Vdc, ID = 2.0 Adc)
(VGS = 4.5 Vdc, ID = 1.0 Adc)
Forward Transconductance (VDS = 3.0 Vdc, ID = 1.0 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 16 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 5)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDS = 10 Vdc, ID = 2.0 Adc,
VGS = 4.5 Vdc, RG = 6.0 W)
Fall Time
TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 10 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc, RG = 6.0 W)
Fall Time
Gate Charge
(VDS = 16 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc)
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage (Note 4)
(IS = 2.0 Adc, VGS = 0 Vdc)
(IS = 2.0 Adc, VGS = 0 Vdc, TJ = 125°C)
RDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
Reverse Recovery Time
(VDD = 15 V, IS = 2.0 A,
dIS/dt = 100 A/ms)
3. Negative sign for PChannel device omitted for clarity.
4. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.max.
5. Switching characteristics are independent of operating junction temperature.
trr
ta
tb
QRR
Min Typ Max Unit
20
25
Vdc
mV/°C
mAdc
− − 1.0
− − 10
− − 100 nAdc
Vdc
1.0 1.5 2.0
4.0 mV/°C
0.118 0.160
0.152 0.180
W
2.0 3.0 mhos
420 588 pF
290 406
116 232
19 38 ns
66 132
25 50
37 74
11 22
21 42
45 90
36 72
15 20 nC
1.2
5.0
4.0
1.5 2.1
1.24
38
17
21
0.034
Vdc
ns
mC
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2







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