Nch+Nch MOSFET. SP8K33FRA Datasheet

SP8K33FRA MOSFET. Datasheet pdf. Equivalent


Part SP8K33FRA
Description 4V Drive Nch+Nch MOSFET
Feature Transistors 4V Drive Nch+Nch MOSFET SP8K33 FRA SP8SKP383KF3R3A AEC-Q101 Qualified zStructure Silic.
Manufacture Rohm
Datasheet
Download SP8K33FRA Datasheet


Transistors 4V Drive Nch+Nch MOSFET SP8K33 FRA SP8SKP383KF3 SP8K33FRA Datasheet
Recommendation Recommendation Datasheet SP8K33FRA Datasheet




SP8K33FRA
Transistors
4V Drive Nch+Nch MOSFET
SP8K33 FRA
SP8SKP383KF3R3A
AEC-Q101 Qualified
zStructure
Silicon N-channel MOSFET
zDimensions (Unit : mm)
SOP8
zFeatures
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small surface Mount Package (SOP8).
zApplication
Switching
Each lead has same dimensions
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
SPS8PK8K33F3RA
Taping
TB
2500
zAbsolute maximum ratings (Ta=25°C)
<It is the same ratings for the Tr1 and Tr2.>
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of storage temperature
1 Pw 10µs, Duty cycle 1%
2 Mounted on a ceramic board.
Symbol
VDSS
VGSS
ID
IDP 1
IS
ISP 1
PD 2
Tch
Tstg
Limits
60
±20
±5.0
±20
1.0
20
2.0
150
55 to +150
zInner circuit
(8) (7)
(6) (5) (8) (7) (6) (5)
2 2
(1) (2) (3) (4)
1 1
(1) (2)
(3) (4)
1 ESD PROTECTION DIODE
2 BODY DIODE
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
Unit
V
V
A
A
A
A
W/TOTAL
°C
°C
1/4



SP8K33FRA
Transistors
zElectrical characteristics (Ta=25°C)
<It is the same characteristics for the Tr1 and Tr2.>
Parameter
Symbol
Gate-source leakage
IGSS
Drain-source breakdown voltage V(BR) DSS
Zero gate voltage drain current IDSS
Gate threshold voltage
VGS (th)
Static drain-source on-state
resistance
RDS
(on)
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Pulsed
Yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
Qg
Qgs
Qgd
Min.
60
1.0
5.0
Typ.
34
38
40
620
145
70
12
20
40
20
8.0
2.0
2.6
Max.
±10
1
2.5
48
54
56
12
Unit Conditions
µA VGS20V, VDS=0V
V ID=1mA, VGS=0V
µA VDS=60V, VGS=0V
V VDS=10V, ID=1mA
ID=5.0A, VGS=10V
mID=5.0A, VGS=4.5V
ID=5.0A, VGS=4.0V
S ID=5.0A, VDS=10V
pF VDS=10V
pF VGS=0V
pF f=1MHz
ns ID=2.5A, VDD 30V
ns VGS=10V
ns RL=12
ns RG =10
nC ID=5.0A, VDD 30V
nC VGS=5V
nC RL=6Ω, RG =10
zBody diode characteristics (Source-drain) (Ta=25°C)
<It is the same characteristics for the Tr1 and Tr2.>
Parameter
Forward voltage
Pulsed
Symbol Min. Typ. Max. Unit
Conditions
VSD
1.2 V IS=5.0A, VGS=0V
SP8SKP383KF3R3A
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