Transistors
4V Drive Nch+Nch MOSFET
SP8K33 FRA
SP8SKP383KF3R3A
AEC-Q101 Qualified
zStructure Silicon N-channel MOSFET
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Transistors
4V Drive Nch+Nch MOSFET
SP8K33 FRA
SP8SKP383KF3R3A
AEC-Q101 Qualified
zStructure Silicon N-channel MOSFET
zDimensions (Unit : mm)
SOP8
zFeatures 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small surface Mount Package (SOP8).
zApplication Switching
Each lead has same dimensions
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
SPS8PK8K33F3RA
Taping TB 2500
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous Pulsed
Source current (Body diode)
Continuous Pulsed
Total power dissipation
Channel temperature
Range of storage temperature
∗1 Pw 10µs, Duty cycle 1% ∗2 Mounted on a ceramic board.
Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg
Limits 60 ±20 ±5.0 ±20 1.0 20 2.0 150
−55 to +150
zInner circuit
(8) (7)
(6) (5) (8) (7) (6) (5)
∗2 ∗2
(1) (2) (3) (4)
∗1 ∗1
(1) (2)
(3) (4)
∗1 ESD PROTECTION DIODE ∗2 BODY DIODE
(1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain
∗A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded.
Unit V V A A A A
W/TOTAL °C °C
1/4
Transistors
zElectrical characteristics (Ta=25°C)
Parameter
S...