N MOS UHF TV
MOS Silicon Power MOS Field Effect Transistor
2SK2396A
UHF
PO = 100 W, GL = 12 dB, h D = 50
TYP
VDD = ...
N MOS UHF TV
MOS Silicon Power MOS Field Effect
Transistor
2SK2396A
UHF
PO = 100 W, GL = 12 dB, h D = 50
TYP
VDD = 30 V, f = 860 MHz, IDQ = 150 mA 2, Pin = 40 dBm
f = 470 860 MHz
Unit mm
TA = 25
D.C.
VDS VGS ID PT Rth Tch Tstg
60 7 15 290 0.6 200 65 200
V V A W /W
TA = 25
IGSS VGS off IDSS gm PO hD GL
VGS = 7 V VDS = 5 V, ID = 50 mA VDS= 60 V VDS = 5 V, ID = 3 A, D ID = 100 mA f = 860 MHz, VDD = 30 V IDQ = 150 mA 2, Pin = 40 dBm f = 860 MHz, VDD = 30 V IDQ = 150 mA 2, Pin = 30 dBm
MIN.
1.5
2.0 90 48 10
TYP.
100 50 12
MAX. 1 4 2
mA V mA S W
dB
P12404JJ1V0DS00 February 1997 N
1
1997
2SK2396A
2
2SK2396A
ZIN
VDD = 30 V, IDQ = 150 mA 2, Pin = 40 dBm
f MHz
Zin W
470 2.4 j2.7
550 2.5 j2.4
650 6.2 j4.2
750 10.8 j1.5
860 5.6 j4.5
3
2SK2396A
ZOUT
VDD = 30 V, IDQ = 150 mA 2, Pin = 40 dBm
f MHz
Zout W
470 7.2 j6.2
550 7.9 j3.4
650 8.0 j0.6
750 4.2 j4.3
860 3.5 j5.4
4
f = 860 MHz
,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
2SK2396A
5
2SK2396A
6
2SK2396A
7
2SK2396A
(011)231- 0161 (022)267- 8740 (019)651- 4344 (0236)23- 5511 (0249)23- 5511 (0246)21- 5511 (0258)36- 2155 (0298)23- 6161 (029)226- 1717 (045)324- 5524 (0273)26- 1255
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