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Mode MOSFET. HY1707M Datasheet

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Mode MOSFET. HY1707M Datasheet






HY1707M MOSFET. Datasheet pdf. Equivalent




HY1707M MOSFET. Datasheet pdf. Equivalent





Part

HY1707M

Description

N-Channel Enhancement Mode MOSFET

Manufacture

HOOYI

Datasheet
Download HY1707M Datasheet


HOOYI HY1707M

HY1707M; HY1707P/M/B/I/MF/PS/PM Features • 70V /80A, RDS(ON)= 6mΩ (typ.) @ VGS=10V Avalanche Rated • Reliable and Rug ged • Lead Free and Green Devices Ava ilable (RoHS Compliant) N-Channel Enha ncement Mode MOSFET Pin Description DS G TO-220FB-3L DS G TO-220FB-3S DS G TO-263-2L DS G TO-262-3L Applications • Power Management for Inverter Syst ems. DS G TO-220MF-3L DS G T.


HOOYI HY1707M

O-3PS-3L D DS G TO-3PS-3M G N-Channel MOSFET Ordering and Marking Informati on S P MB I HY1707 HY1707 HY1707 HY17 07 YYÿ XXXJWW G YYÿ XXXJWW G YYÿ XXX JWW G YYÿ XXXJWW G MF PS PM HY1707 HY1 707 HY1707 YYÿ XXXJWW G YYÿ XXXJWW G YYÿ XXXJWW G Package Code P : TO-220F B-3L B: TO-263-2L MF: TO-220MF-3L PM: T O-3PS-3M Date Code YYXXX WW M : TO-220 FB-3S I : TO-262-3L PS: T.


HOOYI HY1707M

O-3PS-3L Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain molding compounds/die attach m aterials and 100% matte tin plate termi nation finish; which are fully complian t with RoHS. HOOYI lead-free products m eet or exceed the lead-free requirement s of IPC/JEDEC J-STD-020D for MSL class ification at lead-free peak reflow temp erature. HOOYI def.



Part

HY1707M

Description

N-Channel Enhancement Mode MOSFET

Manufacture

HOOYI

Datasheet
Download HY1707M Datasheet




 HY1707M
HY1707P/M/B/I/MF/PS/PM
Features
70V/80A,
RDS(ON)= 6m(typ.) @ VGS=10V
Avalanche Rated
Reliable and Rugged
Lead Free and Green Devices Available
(RoHS Compliant)
N-Channel Enhancement Mode MOSFET
Pin Description
DS
G
TO-220FB-3L
DS
G
TO-220FB-3S
DS
G
TO-263-2L
DS
G
TO-262-3L
Applications
Power Management for Inverter Systems.
DS
G
TO-220MF-3L
DS
G
TO-3PS-3L
D
DS
G
TO-3PS-3M
G N-Channel MOSFET
Ordering and Marking Information
S
P MB I
HY1707 HY1707 HY1707 HY1707
YYÿ XXXJWW G YYÿ XXXJWW G YYÿ XXXJWW G YYÿ XXXJWW G
MF PS PM
HY1707 HY1707 HY1707
YYÿ XXXJWW G YYÿ XXXJWW G YYÿ XXXJWW G
Package Code
P : TO-220FB-3L
B: TO-263-2L
MF: TO-220MF-3L
PM: TO-3PS-3M
Date Code
YYXXX WW
M : TO-220FB-3S
I : TO-262-3L
PS: TO-3PS-3L
Assembly Material
G : Lead Free Device
Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-free
requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. HOOYI
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
HOOYI reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
1 www.hooyi.cc
151015





 HY1707M
HY1707P/M/B/I/MF/PS/PM
Absolute Maximum Ratings
Symbol
Parameter
Rating
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
TC=25°C
70
±25
175
-55 to 175
80
IDM Pulsed Drain Current *
ID Continuous Drain Current
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
RθJA Thermal Resistance-Junction to Ambient
EAS Drain-Source Avalanche Energy
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
L=0.3mH
320**
80
65
178
90
0.84
62.5
650***
Note * Repetitive rating ; pulse width limiited by junction temperature
** Drain current is limited by junction temperature
*** VD=55V
Electrical Characteristics (TC = 25°C Unless Otherwise Noted)
Unit
V
°C
°C
A
A
A
W
°C/W
°C/W
mJ
Symbol
Parameter
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON)* Drain-Source On-state Resistance
Diode Characteristics
VSD * Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
HY1707
Unit
Min. Typ. Max.
VGS=0V, IDS=250µA
70 74 - V
VDS=70V, VGS=0V
TJ=85°C
-
-
-1
µA
- 10
VDS=VGS, IDS=250µA
2 3 4V
VGS=±25V, VDS=0V
- - ±100 nA
VGS=10V, IDS=40A
- 6 7 m
ISD=40A, VGS=0V
- 0.8 1 V
- 55 - ns
IDS=40A, dlSD/dt=100A/µs
-
100
-
nC
2 www.hooyi.cc





 HY1707M
HY1707P/M/B/I/MF/PS/PM
Electrical Characteristics (Cont.)
(T
C
=
25°C
Unless
Otherwise
Noted)
Symbol
Parameter
Test Conditions
Dynamic Characteristics
RG Gate Resistance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
Tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
Tf Turn-off Fall Time
Gate Charge Characteristics
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS=25V,
Frequency=1.0MHz
VDD=35V, RG =3 ,
IDS=40A, VGS=10V,
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=55V, VGS=10V,
IDS=40A
Note * : Pulse test ; pulse width 300µs, duty cycle2%.
HY1707
Min. Typ. Max.
- 0.9 -
- 4550 -
- 900 -
- 280 -
- 21 39
- 10 19
- 25 48
- 31 57
- 88 -
- 20 -
- 21 -
Unit
pF
ns
nC
3 www.hooyi.cc



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