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Pch MOSFET. RZE002P02 Datasheet

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Pch MOSFET. RZE002P02 Datasheet






RZE002P02 MOSFET. Datasheet pdf. Equivalent




RZE002P02 MOSFET. Datasheet pdf. Equivalent





Part

RZE002P02

Description

1.2V Drive Pch MOSFET



Feature


1.2V Drive Pch MOSFET RZE002P02 zStruct ure Silicon P-channel MOSFET zFeatures 1) High speed switching. 2) Small pack age (EMT3). 3) 1.2V drive. zApplicatio ns Switching zPackage specifications Package Type Code Basic ordering uni t (pieces) RZE002P02 Taping TL 3000 zAbsolute maximum ratings (Ta=25°C) P arameter Drain-source voltage Gate-so urce voltage Drain.
Manufacture

Rohm

Datasheet
Download RZE002P02 Datasheet


Rohm RZE002P02

RZE002P02; current Continuous Pulsed Souce curre nt (Body diode) Continuous Pulsed Tot al power dissipation Channel temperatu re Range of storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Each t erminal mounted on a recommended land Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗ 1 PD ∗2 Tch Tstg Limits −20 ±10 200 ±800 −100 −800 150 150 −55 to +150 0.8 1.6 0.1Min. zDimensions (Unit .


Rohm RZE002P02

: mm) EMT3 1.6 0.3 (3) 0.7 0.55 (2) (1) 0.2 0.2 0.5 0.5 1.0 0.15 (1)Sourc e (2)Gate (3)Drain Abbreviated symbol : YK zInner circuit (3) ∗2 (2) ∗ 1 (1) ∗1 ESD PROTECTION DIODE ∗2 BO DY DIODE (1) Source (2) Gate (3) Drain Unit V V mA mA mA mA mW °C °C zThe rmal resistance Parameter Channel to am bient ∗ Each terminal mounted on a re commended land Symbol Rth(ch-.


Rohm RZE002P02

a) ∗ Limits 833 Unit °C/W www.rohm .com ○c 2009 ROHM Co., Ltd. All right s reserved. 1/4 2009.06 - Rev.A RZE0 02P02 zElectrical characteristics (Ta= 25°C) Parameter Symbol Min. Typ. Max . Unit Conditions Gate-source leakage IGSS − − ±10 µA VGS= ±10V, VDS =0V Drain-source breakdown voltage V(B R) DSS −20 − − V ID= −1mA, VGS= 0V Zero gate voltage drain current IDS.

Part

RZE002P02

Description

1.2V Drive Pch MOSFET



Feature


1.2V Drive Pch MOSFET RZE002P02 zStruct ure Silicon P-channel MOSFET zFeatures 1) High speed switching. 2) Small pack age (EMT3). 3) 1.2V drive. zApplicatio ns Switching zPackage specifications Package Type Code Basic ordering uni t (pieces) RZE002P02 Taping TL 3000 zAbsolute maximum ratings (Ta=25°C) P arameter Drain-source voltage Gate-so urce voltage Drain.
Manufacture

Rohm

Datasheet
Download RZE002P02 Datasheet




 RZE002P02
1.2V Drive Pch MOSFET
RZE002P02
zStructure
Silicon P-channel MOSFET
zFeatures
1) High speed switching.
2) Small package (EMT3).
3) 1.2V drive.
zApplications
Switching
zPackage specifications
Package
Type
Code
Basic ordering unit (pieces)
RZE002P02
Taping
TL
3000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Souce current
(Body diode)
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of storage temperature
1 Pw10µs, Duty cycle1%
2 Each terminal mounted on a recommended land
Symbol
VDSS
VGSS
ID
IDP 1
IS
ISP 1
PD 2
Tch
Tstg
Limits
20
±10
±200
±800
100
800
150
150
55 to +150
zDimensions (Unit : mm)
EMT3
1.6
0.3
(3)
0.7
0.55
(2) (1)
0.2 0.2
0.5 0.5
1.0
0.15
(1)Source
(2)Gate
(3)Drain
Abbreviated symbol : YK
zInner circuit
(3)
2
(2)
1
(1)
1 ESD PROTECTION DIODE
2 BODY DIODE
(1) Source
(2) Gate
(3) Drain
Unit
V
V
mA
mA
mA
mA
mW
°C
°C
zThermal resistance
Parameter
Channel to ambient
Each terminal mounted on a recommended land
Symbol
Rth(ch-a)
Limits
833
Unit
°C/W
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
1/4
2009.06 - Rev.A




 RZE002P02
RZE002P02
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS − − ±10 µA VGS= ±10V, VDS=0V
Drain-source breakdown voltage V(BR) DSS 20 − − V ID= 1mA, VGS=0V
Zero gate voltage drain current IDSS − − −1 µA VDS= 20V, VGS=0V
Gate threshold voltage
VGS (th) 0.3 − −1.0 V VDS= 10V, ID= 100µA
0.8 1.2 ID= 200mA, VGS= 4.5V
Static drain-source on-state
resistance
RDS
(on)
1.0 1.5
1.3 2.2
1.6 3.5
ID= 100mA, VGS= 2.5V
ID= 100mA, VGS= 1.8V
ID= 40mA, VGS= 1.5V
2.4 9.6 ID= 10mA, VGS= 1.2V
Forward transfer admittance Yfs 0.2 − − S VDS= 10V, ID= 200mA
Input capacitance
Ciss
115
pF VDS= 10V
Output capacitance
Coss 10 pF VGS= 0V
Reverse transfer capacitance Crss 6 pF f=1MHz
Turn-on delay time
Rise time
Turn-off delay time
Fall time
td (on) 6 ns VDD 10V
tr
td (off)
4
17
ns ID= 100mA
VGS= 4.5V
ns RL 100
tf 17 ns RG= 10
Total gate charge
Qg 1.4 nC VDD 10V RL 50
Gate-source charge
Qgs 0.3 nC ID= 200mA RG= 10
Gate-drain charge
Qgd 0.3 nC VGS= 4.5V
Pulsed
zBody diode characteristics (Source-drain)
Parameter
Forward voltage
Symbol Min. Typ. Max. Unit
Conditions
VSD
− −1.2 V IS= 200mA, VGS=0V
Pulsed
Data Sheet
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c 2009 ROHM Co., Ltd. All rights reserved.
2/4
2009.06 - Rev.A




 RZE002P02
RZE002P02
Data Sheet
zElectrical characteristics curves
0.2 Ta=25°C
VGS= -10V
Pulsed
VGS= -4.5V
0.15 VGS= -3.2V
VGS= -2.5V
0.1 VGS= -2.0V
VGS= -1.5V
VGS= -1.8V
0.05
0
0
VGS= -1.2V
VGS= -1.0V
0.2 0.4 0.6 0.8
1
DRAIN-SOURCE VOLTAGE : -VDS[V]
Fig.1 Typical Output Characteristics()
0.2
VGS= -4.5V
Ta=25°C
Pulsed
0.15 VGS= -2.5V
VGS= -1.8V
VGS= -1.5V
0.1 VGS= -1.2V
0.05
VGS= -1.0V
0
0 2 4 6 8 10
DRAIN-SOURCE VOLTAGE : -VDS[V]
Fig.2 Typical Output Characteristics()
1 VDS= -10V
Pulsed
0.1
Ta= 125°C
0.01 Ta= 75°C
Ta= 25°C
Ta= - 25°C
0.001
0.0001
0 0.5 1 1.5
GATE-SOURCE VOLTAGE : -VGS[V]
Fig.3 Typical Transfer Characteristics
10000 Ta=25°C
Pulsed
1000
100
0.001
0.01
VGS= -1.2V
VGS= -1.5V
VGS= -1.8V
VGS= -2.5V
VGS= -4.5V
0.1 1
DRAIN-CURRENT : -ID[A]
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current()
10000
VGS= -4.5V
Pulsed
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
100
0.001
0.01
0.1
1
DRAIN-CURRENT : -ID[A]
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current()
10000
VGS= -2.5V
Pulsed
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
100
0.001
0.01
0.1
DRAIN-CURRENT : -ID[A]
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current()
1
10000
VGS= -1.8V
Pulsed
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
100
0.001
0.01
0.1
1
DRAIN-CURRENT : -ID[A]
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current()
10000
VGS= -1.5V
Pulsed
10000
VGS= -1.2V
Pulsed
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
100
0.001
0.01
0.1
DRAIN-CURRENT : -ID[A]
Fig.8 Static Drain-Source On-State
Resistance vs. Drain Current()
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
100
0.001
0.01
0.1
DRAIN-CURRENT : -ID[A]
Fig.9 Static Drain-Source On-State
Resistance vs. Drain Current()
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
3/4
2009.06 - Rev.A






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