RZE002P02

1.2V Drive Pch MOSFET RZE002P02 zStructure Silicon P-channel MOSFET zFeatures 1) High speed switching. 2) Small package (EMT3). 3) 1.2V drive. zApplications Switching zPackage specifications Package Type Code Basic ordering unit (pieces) RZE002P02 Taping TL 3000 zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Continuous Pulsed Souce current (Body diode) Continuous Pulsed Total power dissipation Channel temperature Range of storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Each terminal mounted on a recommended land Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg Limits −20 ±10 ±200 ±800 −100 −800 150 150 −55 to +150 0.8 1.6 0.1Min. zDimensions (Unit : mm) EMT3 1.6 0.3 (3) 0.7 0.55 (2) (1) 0.2 0.2 0.5 0.5 1.0 0.15 (1)Source (2)Gate (3)Drain Abbreviated symbol : YK zInner circuit (3) ∗2 (2) ∗1 (1) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (1) Source (2) Gate (3) Drain Unit V V mA mA mA mA mW °C °C zThermal resistance Parameter Channel to ambient ∗ Each terminal mounted on a recommended land Symbol Rth(ch-a) ∗ Limits 833 Unit °C/W www.rohm.com ○c 2009 ROHM Co., Ltd. All rights reserved. 1/4 2009.06 - Rev.A RZE002P02 zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS − − ±10 µA VGS= ±10V, VDS=0V Drain-source breakdown voltage V(BR) DSS −20 − − V ID= −1mA, VGS=0V Zero gate voltage drain current IDSS − − −1 µA VDS= −20...