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Nch MOSFET. RUE003N02 Datasheet

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Nch MOSFET. RUE003N02 Datasheet






RUE003N02 MOSFET. Datasheet pdf. Equivalent




RUE003N02 MOSFET. Datasheet pdf. Equivalent





Part

RUE003N02

Description

1.8V Drive Nch MOSFET



Feature


1.8V Drive Nch MOSFET RUE003N02 Stru cture Silicon N-channel MOSFET Dime nsions (Unit : mm) EMT3 Features 1) Low on-resistance. 2) Fast switching s peed. 3) Low voltage drive (1.8V) makes this device ideal for portable equipme nt. 4) Drive circuits can be simple. 5) Parallel use is easy. (1)Source (2)Ga te (3)Drain Abbreviated symbol : QT Applications Switching .
Manufacture

Rohm

Datasheet
Download RUE003N02 Datasheet


Rohm RUE003N02

RUE003N02; Packaging specifications Type Packa ge Code Basic ordering unit (pieces) T aping TL 3000 RUE003N02 Equivalent circuit Drain Gate ∗2 ∗1 ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE S ource Absolute maximum ratings (Ta= 25C) Parameter Symbol Drain-sourc e voltage VDSS Gate-source voltage V GSS Drain current Continuous Pulsed Total power dissipation ID IDP∗1 .


Rohm RUE003N02

PD∗2 Channel temperature Tch Range of storage temperature Tstg ∗1 Pw 10μs, Duty cycle≤1% ∗2 Each termi nal mounted on a recommended land Limi ts 20 ±8 ±300 ±600 150 150 −55 to +150 Unit V V mA mA mW °C °C The rmal resistance Parameter Channel to am bient ∗ Each terminal mounted on a re commended land Symbol Rth(ch-a) ∗ L imits 833 Unit °C / W www.rohm.com ○c 20.


Rohm RUE003N02

11 ROHM Co., Ltd. All rights reserved. 1/3 2011.05 - Rev.B RUE003N02 Ele ctrical characteristics (Ta=25C) Pa rameter Gate-source leakage Drain-sourc e breakdown voltage Zero gate voltage d rain current Gate threshold voltage Sta tic drain-source on-state resistance Fo rward transfer admittance Input capacit ance Output capacitance Reverse transfe r capacitance Turn-on .

Part

RUE003N02

Description

1.8V Drive Nch MOSFET



Feature


1.8V Drive Nch MOSFET RUE003N02 Stru cture Silicon N-channel MOSFET Dime nsions (Unit : mm) EMT3 Features 1) Low on-resistance. 2) Fast switching s peed. 3) Low voltage drive (1.8V) makes this device ideal for portable equipme nt. 4) Drive circuits can be simple. 5) Parallel use is easy. (1)Source (2)Ga te (3)Drain Abbreviated symbol : QT Applications Switching .
Manufacture

Rohm

Datasheet
Download RUE003N02 Datasheet




 RUE003N02
1.8V Drive Nch MOSFET
RUE003N02
Structure
Silicon N-channel
MOSFET
Dimensions (Unit : mm)
EMT3
Features
1) Low on-resistance.
2) Fast switching speed.
3) Low voltage drive (1.8V) makes this device ideal for
portable equipment.
4) Drive circuits can be simple.
5) Parallel use is easy.
(1)Source
(2)Gate
(3)Drain
Abbreviated symbol : QT
Applications
Switching
Packaging specifications
Type
Package
Code
Basic ordering unit
(pieces)
Taping
TL
3000
RUE003N02
Equivalent circuit
Drain
Gate
2
1
1 ESD PROTECTION DIODE
2 BODY DIODE
Source
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Drain-source voltage
VDSS
Gate-source voltage
VGSS
Drain current
Continuous
Pulsed
Total power dissipation
ID
IDP1
PD2
Channel temperature
Tch
Range of storage temperature
Tstg
1 Pw10μs, Duty cycle1%
2 Each terminal mounted on a recommended land
Limits
20
±8
±300
±600
150
150
55 to +150
Unit
V
V
mA
mA
mW
°C
°C
Thermal resistance
Parameter
Channel to ambient
Each terminal mounted on a recommended land
Symbol
Rth(ch-a)
Limits
833
Unit
°C / W
www.rohm.com
c 2011 ROHM Co., Ltd. All rights reserved.
1/3
2011.05 - Rev.B




 RUE003N02
RUE003N02
Electrical characteristics (Ta=25C)
Parameter
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Pulsed
Symbol
IGSS
V(BR)DSS
IDSS
VGS(th)
RDS(on)
|Yfs|
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Min.
20
0.3
400
Typ.
0.7
0.8
1.0
25
10
10
5
10
15
10
Max.
10
1.0
1.0
1.0
1.2
1.4
Unit Conditions
μA VGS8V, VDS=0V
V ID=1mA, VGS=0V
μA VDS=20V, VGS=0V
V VDS=10V, ID=1mA
Ω ID=300mA, VGS=4.0V
Ω ID=300mA, VGS=2.5V
Ω ID=300mA, VGS=1.8V
ms ID=300mA, VDS=10V
pF VDS=10V
pF VGS=0V
pF f=1MHz
ns ID=150mA, VDD 10V
ns VGS=4.0V
ns RL=67Ω
ns RG=10Ω
Body diode characteristics (Source-drain) (Ta=25C)
Parameter
Forward voltage
Symbol Min. Typ. Max. Unit
VSD
1.2 V
Pulsed
Conditions
IS= 100mA, VGS=0V
Data Sheet
Electrical characteristic curves
1 VDS=10V
Pulsed
0.1
0.01
Ta=125°C
75°C
0.001 25°C
25°C
0.0001
0.00001
0.0 0.5 1.0 1.5
GATE-SOURCE VOLTAGE : VGS (V)
Fig.1 Typical transfer characteristics
10
Ta=125°C
75°C
25°C
25°C
1
VGS=1.8V
Pulsed
10
Ta=125°C
75°C
25°C
25°C
1
VGS=4V
Pulsed
0.1
0.01
0.1
DRAIN CURRENT : ID (A)
1
Fig.2 Static drain-source on-state
resistance vs. drain current (Ι)
1
VGS=0V
Pulsed
Ta=125°C
75°C
0.1 25°C
25°C
10
Ta=125°C
75°C
25°C
25°C
1
VGS=2.5V
Pulsed
0.1
0.01
0.1
DRAIN CURRENT : ID (A)
1
Fig.3 Static drain-source on-state
resistance vs. drain current (ΙΙ)
100
Ta=25°C
f=1MHZ
VGS=0V
Ciss
10 Coss
Crss
0.1
0.01
0.1
DRAIN CURRENT : ID (A)
1
Fig.4 Static drain-source on-state
resistance vs. drain current (ΙΙΙ)
0.01
0.0 0.5 1 1.5
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.5 Source current vs.
source-drain voltage
1
0.01 0.1 1 10 100
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.6 Typical capacitance vs.
drain-source voltage
www.rohm.com
c 2011 ROHM Co., Ltd. All rights reserved.
2/3
2011.05 - Rev.B




 RUE003N02
RUE003N02
1000
100
Ta=25°C
VDD=10V
VGS=4V
RG=10Ω
Pulsed
td(off)
10 tf
td(on)
tr
1
0.01 0.1
DRAIN CURRENT : ID (A)
1
Fig.7 Switching characteristics
Switching characteristics measurement circuit
Pulse width
VGS
ID
D.U.T.
RG
VDS
RL
VDD
VGS
50%
10%
VDS 10%
td (on) tr
ton
90%
90%
50%
10%
td (off)
tf
toff
90%
Fig.8 Switching time measurement circuit
Fig.9 Switching time waveforms
Data Sheet
www.rohm.com
c 2011 ROHM Co., Ltd. All rights reserved.
3/3
2011.05 - Rev.B






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