Signal MOSFET. EM6K33 Datasheet

EM6K33 MOSFET. Datasheet pdf. Equivalent


Part EM6K33
Description Small Signal MOSFET
Feature EM6K33   Nch+Nch 50V 200mA Small Signal MOSFET VDSS RDS(on)(Max.) ID PD 50V 2.2Ω ±200mA 150mW lFe.
Manufacture Rohm
Datasheet
Download EM6K33 Datasheet


EM6K33   Nch+Nch 50V 200mA Small Signal MOSFET VDSS RDS(on) EM6K33 Datasheet
Recommendation Recommendation Datasheet EM6K33 Datasheet




EM6K33
EM6K33
  Nch+Nch 50V 200mA Small Signal MOSFET
VDSS
RDS(on)(Max.)
ID
PD
50V
2.2Ω
±200mA
150mW
lFeatures
1) High-speed switching.
2) Small package(EMT6)
3) Ultra low voltage drive(1.2V drive).
lOutline
SOT-563
SC-107C
EMT6
 
      
lInner circuit
   Datasheet
 
lPackaging specifications
Packing
lApplication
Reel size (mm)
Switching
Type Tape width (mm)
Basic ordering unit (pcs)
Taping code
Marking
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) <Tr1 and Tr2>
Parameter
Symbol
Value
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Power dissipation
total
element
VDSS
ID
IDP*1
VGSS
PD*2
50
±200
±800
±8
150
120
Junction temperature
Operating junction and storage temperature range
Tj 150
Tstg -55 to +150
Embossed
Tape
180
8
8000
T2R
K33
Unit
V
mA
mA
V
mW
                                                                                        
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© 2016 ROHM Co., Ltd. All rights reserved.
1/10
20160825 - Rev.001    



EM6K33
EM6K33
          
lThermal resistance
Parameter
Thermal resistance, junction - ambient
total
element
                Datasheet
                    
Symbol
RthJA*2
Values
Unit
Min. Typ. Max.
- - 833
/W
- - 1042
lElectrical characteristics (Ta = 25°C) <Tr1 and Tr2>
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
Breakdown voltage
temperature coefficient
Zero gate voltage
drain current
Gate - Source
leakage current
Gate threshold
voltage
Gate threshold voltage
temperature coefficient
Static drain - source
on - state resistance
Forward Transfer
Admittance
V(BR)DSS VGS = 0V, ID = 1mA
ΔV(BR)DSS ID =
  ΔTj  referenced to
IDSS VDS = 20V, VGS = 0V
IGSS VDS = 0V, VGS = ±8V
VGS(th) VDS = 10V, ID = 1mA
ΔVGS(th) ID =
  ΔTj  referenced to
VGS = 4.5V, ID = 200mA
VGS = 2.5V, ID = 200mA
RDS(on)*3 VGS = 1.8V, ID = 100mA
VGS = 1.5V, ID = 40mA
VGS = 1.2V, ID = 20mA
|Yfs|*3 VDS = 10V, ID = 200mA
Values
Min. Typ. Max.
   
Unit
20 - - V
- - - mV/
- - 1.0 μA
- - ±10 μA
0.3 - 1.0 V
- - - V/
- 1.6 2.2
- 1.7 2.4
- 1.9 2.7 Ω
- 2.0 4.0
- 2.4 7.2
400 - - mS
                                                                                               
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© 2016 ROHM Co., Ltd. All rights reserved.
2/10
20160825 - Rev.001







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