Nch MOSFET. RUF015N02 Datasheet

RUF015N02 MOSFET. Datasheet pdf. Equivalent


Part RUF015N02
Description 1.8V Drive Nch MOSFET
Feature Transistors 1.8V Drive Nch MOSFET RUF015N02 RUF015N02 0.2Max. zStructure Silicon N-channel MOSFET.
Manufacture Rohm
Datasheet
Download RUF015N02 Datasheet


Transistors 1.8V Drive Nch MOSFET RUF015N02 RUF015N02 0.2M RUF015N02 Datasheet
Recommendation Recommendation Datasheet RUF015N02 Datasheet




RUF015N02
Transistors
1.8V Drive Nch MOSFET
RUF015N02
RUF015N02
zStructure
Silicon N-channel MOSFET
zFeatures
1) Low On-resistance.
2) Space saving, small surface mount package (TUMT3).
3) Low voltage drive (1.8V drive).
zApplications
Switching
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RUF015N02
Taping
TL
3000
zDimensions (Unit : mm)
TUMT3
SOT-323T
(1) Gate
(2) Source
(3) Drain
Abbreviated symbol : PS
zInner circuit
(3)
(1)
1
2
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of storage temperature
1 Pw10µs, Duty cycle1%
2 Mounted on a ceramic board
Symbol
VDSS
VGSS
ID
IDP 1
IS
ISP 1
PD 2
Tch
Tstg
(2)
1 ESD PROTECTION DIODE
2 BODY DIODE
Limits
20
10
±1.5
±3.0
0.6
2.4
0.8
150
55 to +150
Unit
V
V
A
A
A
A
W
°C
°C
zThermal resistance
Parameter
Channel to ambient
Mounted on a ceramic board
Symbol
Rth(ch-a)
Limits
156
Unit
°C/W
(1) Gate
(2) Source
(3) Drain
1/3



RUF015N02
Transistors
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Gate-source leakage
IGSS
Drain-source breakdown voltage V(BR) DSS
Zero gate voltage drain current IDSS
Gate threshold voltage
VGS (th)
Static drain-source on-state
resistance
RDS (on)
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Pulsed
Yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
Qg
Qgs
Qgd
Min.
20
0.3
1.6
Typ.
130
170
220
110
18
15
5
5
20
3
1.8
0.3
0.3
Max.
10
1
1.0
180
240
310
2.5
Unit Conditions
µA VGS=10V, VDS=0V
V ID= 1mA, VGS=0V
µA VDS= 20V, VGS=0V
V VDS= 10V, ID= 1mA
mID= 1.5A, VGS= 4.5V
mID= 1.5A, VGS= 2.5V
mID= 0.8A, VGS= 1.8V
S VDS= 10V, ID= 1.5A
pF VDS= 10V
pF VGS=0V
pF f=1MHz
ns ID= 1.0A
ns VDD 10V
VGS= 4.5V
ns RL=10
ns RG=10
nC VDD 10V
nC VGS= 4.5V
nC ID= 1.5A
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter
Forward voltage
Symbol Min. Typ. Max. Unit
Conditions
VSD − − 1.2 V IS= 0.6A, VGS=0V
RUF015N02
2/3







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)