Power MOSFET. RUF020N02 Datasheet

RUF020N02 MOSFET. Datasheet pdf. Equivalent


Part RUF020N02
Description Power MOSFET
Feature .
Manufacture Rohm
Datasheet
Download RUF020N02 Datasheet


RUF020N02 Datasheet
Recommendation Recommendation Datasheet RUF020N02 Datasheet




RUF020N02
RUF020N02
  Nch 20V 2A Middle Power MOSFET
   Datasheet
lOutline
VDSS
20V
SOT-323T
 
RDS(on)(Max.)
105mΩ
ID
±2A
TUMT3
PD
0.8W
 
      
lFeatures
1) Low on - resistance.
2) 1.5V drive
3) Built-in G-S Protection Diode.
4) Small Surface Mount Package (TUMT3).
5) Pb-free lead plating ; RoHS compliant
lInner circuit
lPackaging specifications
Packing
Embossed
Tape
Reel size (mm)
180
lApplication
Switching
Type Tape width (mm)
Basic ordering unit (pcs)
8
3000
Taping code
TL
Marking
XK
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
20
V
Continuous drain current
ID
±2
A
Pulsed drain current
IDP*1
±6
A
Gate - Source voltage
VGSS
±10
V
Power dissipation
PD*2
0.8
W
PD*3
0.75
W
Junction temperature
Tj
150
Operating junction and storage temperature range
Tstg
-55 to +150
                                              
                                                                                        
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/11
20151030 - Rev.001    



RUF020N02
RUF020N02
          
lThermal resistance
Parameter
Thermal resistance, junction - ambient
                Datasheet
                    
Symbol
RthJA*2
RthJA*3
Values
Unit
Min. Typ. Max.
-
- 156 /W
-
- 167 /W
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = 1mA
Breakdown voltage
temperature coefficient
Zero gate voltage
drain current
 ΔV(BR)DSS  ID = 1mA
   ΔTj     referenced to 25
IDSS VDS = 20V, VGS = 0V
Gate - Source leakage current IGSS VGS = ±10V, VDS = 0V
Gate threshold voltage
Gate threshold voltage
temperature coefficient
VGS(th) VDS = 10V, ID = 1mA
 ΔVGS(th)   ID = 1mA
   ΔTj     referenced to 25
VGS = 4.5V, ID = 2A
Static drain - source
on - state resistance
RDS(on)*4 VGS = 2.5V, ID = 2A
VGS = 1.8V, ID = 1A
VGS = 1.5V, ID = 0.4A
Gate resistance
RG f = 1MHz, open drain
Forward Transfer
Admittance
|Yfs|*4 VDS = 10V, ID = 2A
Values
Unit
Min. Typ. Max.
20 -
-
V
-
29
- mV/
-
-
1 μA
-
- ±10 μA
0.3 - 1.0 V
- -1.6 - mV/
- 75 105
- 95 135
- 130 185
- 170 240
-
24 -
Ω
1.8 -
-
S
*1 Pw10μs , Duty cycle1%
*2 Mounted on a ceramic board (30x30x0.8mm)
*3 Mounted on a FR4 (25x25x0.8mm)
*4 Pulsed
                                             
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
2/11
                                          
20151030 - Rev.001







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