Pch MOSFET. RZF013P01 Datasheet

RZF013P01 MOSFET. Datasheet pdf. Equivalent


Part RZF013P01
Description 1.5V Drive Pch MOSFET
Feature 0.2Max. 1.5V Drive Pch MOSFET RZF013P01 zStructure Silicon P-channel MOSFET zDimensions (Unit : m.
Manufacture Rohm
Datasheet
Download RZF013P01 Datasheet


0.2Max. 1.5V Drive Pch MOSFET RZF013P01 zStructure Silicon RZF013P01 Datasheet
Recommendation Recommendation Datasheet RZF013P01 Datasheet




RZF013P01
1.5V Drive Pch MOSFET
RZF013P01
zStructure
Silicon P-channel MOSFET
zDimensions (Unit : mm)
TUMT3
SOT-323T
zFeatures
1) Low on-resistance.
2) High power package.
3) Low voltage drive. (1.5V)
zApplications
Switching
(1) Gate
(2) Source
(3) Drain
Abbreviated symbol : XC
zEquivalent circuit
(3)
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RZF013P01
Taping
TL
3000
(1) 2
1
(2)
1 ESD PROTECTION DIODE
2 BODY DIODE
(1) Gate
(2) Source
(3) Drain
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Drain-source voltage
VDSS
Gate-source voltage
VGSS
Drain current
Source current
(Body diode)
Total power dissipation
Continuous
Pulsed
Continuous
Pulsed
ID
IDP 1
IS 1
ISP
PD 2
Channel temperature
Tch
Range of Storage temperature
1 Pw10µs, Duty cycle1%
2 When mounted on a ceramic board
Tstg
Limits
12
±10
±1.3
±5.2
0.6
5.2
0.8
150
55 to +150
zThermal resistance
Parameter
Channel to ambient
When mounted on a ceramic board
Symbol
Rth(ch-a)
Limits
156
Unit
V
V
A
A
A
A
W
°C
°C
Unit
°C / W
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
1/5
2009.02 - Rev.A



RZF013P01
RZF013P01
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS − − ±10 µA VGS=±10V, VDS=0V
Drain-source breakdown voltage V(BR) DSS 12 − − V ID= 1mA, VGS=0V
Zero gate voltage drain current IDSS − − −1 µA VDS= 12V, VGS=0V
Gate threshold voltage
VGS (th) 0.3 − −1.0 V VDS= 6V, ID= 1mA
190 260 mID= 1.3A, VGS= 4.5V
Static drain-source on-state
resistance
RDS (on)
280 390 mID= 0.6A, VGS= 2.5V
400 600 mID= 0.6A, VGS= 1.8V
Forward transfer admittance
Yfs 1.4
530 1060 mID= 0.2A, VGS= 1.5V
− − S VDS= 6V, ID= 1.3A
Input capacitance
Ciss
290
pF VDS= 6V
Output capacitance
Coss 28 pF VGS=0V
Reverse transfer capacitance Crss
21 pF f=1MHz
Turn-on delay time
td (on)
8
ns VDD 6V
Rise time
Turn-off delay time
Fall time
tr 10 ns ID= 0.6A
td (off)
30
VGS= 4.5V
ns RL 10
tf 9 ns RG=10
Total gate charge
Qg 2.4 nC VDD 6V RL 4.6
Gate-source charge
Qgs 0.6 nC ID= 1.3A RG=10
Gate-drain charge
Qgd 0.4 nC VGS= 4.5V
Pulsed
zBody diode characteristics (Source -drain) (Ta=25°C)
Parameter
Forward voltage
Symbol Min. Typ. Max. Unit
VSD
− −1.2 V
Pulsed
Conditions
IS= 1.3A, VGS=0V
Data Sheet
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
2/5
2009.02 - Rev.A







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