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Power MOSFET. RUL035N02 Datasheet

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Power MOSFET. RUL035N02 Datasheet






RUL035N02 MOSFET. Datasheet pdf. Equivalent




RUL035N02 MOSFET. Datasheet pdf. Equivalent





Part

RUL035N02

Description

Nch 20V 3.5A Power MOSFET

Manufacture

Rohm

Datasheet
Download RUL035N02 Datasheet


Rohm RUL035N02

RUL035N02; RUL035N02 Nch 20V 3.5A Power MOSFET Dat asheet VDSS RDS(on) (Max.) ID PD 20V 43mW 3.5A 1.0W lFeatures 1) Low on - r esistance. 2) 1.5V Drive. 3) Built-in G-S Protection Diode. 4) Small Surfac e Mount Package (TUMT6). 5) Pb-free le ad plating ; RoHS compliant lApplicati on DC/DC converters lAbsolute maximum ratings(Ta = 25°C) Parameter Drain - S ource voltage Conti.


Rohm RUL035N02

nuous drain current Pulsed drain current Gate - Source voltage Power dissipatio n Junction temperature Range of storage temperature lOutline TUMT6 SOT-363T (6) (5) (4) (1) (2) (3) lInner circuit (1) Drain (2) Drain (3) Gate (4) Sourc e (5) Drain (6) Drain *1 ESD PROTECTION DIODE *2 BODY DIODE lPackaging specifi cations Packaging Reel size (mm) Tape w idth (mm) Type Bas.


Rohm RUL035N02

ic ordering unit (pcs) Taping code Marki ng Taping 180 8 3,000 TR XD Symbol VD SS ID *1 ID,pulse *2 VGSS PD *3 PD *4 T j Tstg Value 20 3.5 7 10 1.0 0.32 150 -55 to +150 Unit V A A V W W °C °C www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 1/11 2013. 02 - Rev.B RUL035N02 lThermal resistan ce Parameter Thermal resistance, juncti on - ambient Data Sheet S.



Part

RUL035N02

Description

Nch 20V 3.5A Power MOSFET

Manufacture

Rohm

Datasheet
Download RUL035N02 Datasheet




 RUL035N02
RUL035N02
Nch 20V 3.5A Power MOSFET
Datasheet
VDSS
RDS(on) (Max.)
ID
PD
20V
43mW
3.5A
1.0W
lFeatures
1) Low on - resistance.
2) 1.5V Drive.
3) Built-in G-S Protection Diode.
4) Small Surface Mount Package (TUMT6).
5) Pb-free lead plating ; RoHS compliant
lApplication
DC/DC converters
lAbsolute maximum ratings(Ta = 25°C)
Parameter
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Power dissipation
Junction temperature
Range of storage temperature
lOutline
TUMT6
SOT-363T
(6)
(5)
(4)
(1)
(2)
(3)
lInner circuit
(1) Drain
(2) Drain
(3) Gate
(4) Source
(5) Drain
(6) Drain
*1 ESD PROTECTION DIODE
*2 BODY DIODE
lPackaging specifications
Packaging
Reel size (mm)
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
Marking
Taping
180
8
3,000
TR
XD
Symbol
VDSS
ID *1
ID,pulse *2
VGSS
PD *3
PD *4
Tj
Tstg
Value
20
3.5
7
10
1.0
0.32
150
-55 to +150
Unit
V
A
A
V
W
W
°C
°C
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
1/11
2013.02 - Rev.B





 RUL035N02
RUL035N02
lThermal resistance
Parameter
Thermal resistance, junction - ambient
Data Sheet
Symbol
RthJA *3
RthJA *4
Values
Min. Typ. Max.
Unit
- - 125 °C/W
- - 391 °C/W
lElectrical characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = 1mA
Values
Min. Typ. Max.
Unit
20 - - V
Breakdown voltage
temperature coefficient
ΔV(BR)DSS ID=1mA
ΔTj referenced to 25°C
Zero gate voltage drain current
Gate - Source leakage current
Gate threshold voltage
IDSS
IGSS
VGS (th)
VDS = 20V, VGS = 0V
VGS = 10V, VDS = 0V
VDS = 10V, ID = 1mA
Gate threshold voltage
temperature coefficient
ΔV(GS)th ID=1mA
ΔTj referenced to 25°C
Static drain - source
on - state resistance
Gate input resistannce
Transconductance
VGS=4.5V, ID=3.5A
VGS=2.5V, ID=3.5A
RDS(on) *5 VGS=1.8V, ID=1.8A
VGS=1.5V, ID=0.7A
VGS=4.5V, ID=3.5A, Tj=125°C
RG
gfs *5
f = 1MHz, open drain
VDS=10V, ID=3.5A
*1 Limited only by maximum temperature allowed.
*2 Pw 10ms, Duty cycle 1%
*3 Mounted on a seramic board (30×30×0.8mm)
*4 Mounted on a FR4 (15×20×0.8mm)
*5 Pulsed
-
-
-
0.3
-
-
-
-
-
-
-
3.2
20
-
-
-
-1.9
31
38
50
66
56
7.5
8.5
- mV/°C
1 mA
10 mA
1.0 V
- mV/°C
43
53
70 mW
93
80
-W
-S
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
2/11
2013.02 - Rev.B





 RUL035N02
RUL035N02
Data Sheet
lElectrical characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Ciss
Coss
Crss
td(on) *5
tr *5
td(off) *5
tf *5
VGS = 0V
VDS = 10V
f = 1MHz
VDD 10V, VGS = 4.5V
ID = 1.8A
RL = 5.6W
RG = 10W
Values
Min. Typ. Max.
- 460 -
- 110 -
- 60 -
- 10 -
- 20 -
- 40 -
- 50 -
Unit
pF
ns
lGate Charge characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Total gate charge
Gate - Source charge
Gate - Drain charge
Qg *5
Qgs *5
Qgd *5
VDD 10, ID=3.5A
VGS = 4.5V
Values
Min. Typ. Max.
- 5.7 -
- 1.1 -
- 0.9 -
Unit
nC
lBody diode electrical characteristics (Source-Drain)(Ta = 25°C)
Parameter
Symbol
Conditions
Min.
Values
Typ.
Max.
Inverse diode continuous,
forward current
Forward voltage
IS *1 Ta = 25°C
VSD *5 VGS = 0V, Is = 0.8A
- - 0.8
- - 1.2
Unit
A
V
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
3/11
2013.02 - Rev.B



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