Pch MOSFET. RZL035P01 Datasheet

RZL035P01 MOSFET. Datasheet pdf. Equivalent


Part RZL035P01
Description 1.5V Drive Pch MOSFET
Feature 1.5V Drive Pch MOSFET RZL035P01 zStructure Silicon P-channel MOSFET zFeatures 1) Low on-resistance. .
Manufacture Rohm
Datasheet
Download RZL035P01 Datasheet


1.5V Drive Pch MOSFET RZL035P01 zStructure Silicon P-channel RZL035P01 Datasheet
Recommendation Recommendation Datasheet RZL035P01 Datasheet




RZL035P01
1.5V Drive Pch MOSFET
RZL035P01
zStructure
Silicon P-channel MOSFET
zFeatures
1) Low on-resistance.
2) High power package.
3) Low voltage drive. (1.5V)
zApplication
Switching
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RZL035P01
Taping
TR
3000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of Storage temperature
1 Pw10µs, Duty cycle1%
2 Mounted on a ceramic board
Symbol
VDSS
VGSS
ID
IDP 1
IS
ISP 1
PD 2
Tch
Tstg
Limits
12
±10
±3.5
±14
0.8
14
1.0
150
55 to +150
Unit
V
V
A
A
A
A
W
°C
°C
zThermal resistance
Parameter
Channel to ambient
When mounted on a ceramic board.
Symbol
Rth (ch-a)
Limits
125
Unit
°C / W
zDimensions (Unit : mm)
TUMT6
Abbreviated symbol : YB
zInner circuit
(6) (5)
(4)
2
(1) (2)
1 ESD PROTECTION DIODE
2 BODY DIODE
1
(1) Drain
(2) Drain
(3) Gate
(3) (4) Source
(5) Drain
(6) Drain
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
1/4
2009.12 - Rev.A



RZL035P01
RZL035P01
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS − − ±10 µA VGS=±10V, VDS=0V
Drain-source breakdown voltage V(BR) DSS 12 − − V ID= 1mA, VGS=0V
Zero gate voltage drain current IDSS − − −1 µA VDS= 12V, VGS=0V
Gate threshold voltage
VGS (th) 0.3 − −1.0 V VDS= 6V, ID= 1mA
Static drain-source on-state
resistance
RDS (on)
26 36 mID= 3.5A, VGS= 4.5V
36 50 mID= 1.7A, VGS= 2.5V
46 69 mID= 1.7A, VGS= 1.8V
Forward transfer admittance
66 132 mID= 0.7A, VGS= 1.5V
Yfs 5.5
S VDS= 6V, ID= 3.5A
Input capacitance
Ciss
1940
pF VDS= 6V
Output capacitance
Coss 260 pF VGS=0V
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Crss
td (on)
tr
td (off)
tf
Qg
Qgs
Qgd
240
10
50
350
180
20
3.5
3.0
pF f=1MHz
ns VDD 6V
ns ID= 1.7A
VGS= 4.5V
ns RL 3.5
ns RG=10
nC VDD 6V, ID= 3.5A
nC VGS= 4.5V
nC RL 1.7, RG=10
Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Forward voltage
VSD
− −1.2 V
Pulsed
Conditions
IS= 3.5A, VGS=0V
Data Sheet
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
2/4
2009.12 - Rev.A







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