RZL035P01

1.5V Drive Pch MOSFET RZL035P01 zStructure Silicon P-channel MOSFET zFeatures 1) Low on-resistance. 2) High power package. 3) Low voltage drive. (1.5V) zApplication Switching zPackaging specifications Package Type Code Basic ordering unit (pieces) RZL035P01 Taping TR 3000 zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Continuous Pulsed Source current (Body diode) Continuous Pulsed Total power dissipation Channel temperature Range of Storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg Limits −12 ±10 ±3.5 ±14 −0.8 −14 1.0 150 −55 to +150 Unit V V A A A A W °C °C zThermal resistance Parameter Channel to ambient ∗ When mounted on a ceramic board. Symbol Rth (ch-a) ∗ Limits 125 Unit °C / W 0.2Max. zDimensions (Unit : mm) TUMT6 Abbreviated symbol : YB zInner circuit (6) (5) (4) ∗2 (1) (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE ∗1 (1) Drain (2) Drain (3) Gate (3) (4) Source (5) Drain (6) Drain www.rohm.com ○c 2009 ROHM Co., Ltd. All rights reserved. 1/4 2009.12 - Rev.A RZL035P01 zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS − − ±10 µA VGS=±10V, VDS=0V Drain-source breakdown voltage V(BR) DSS −12 − − V ID= −1mA, VGS=0V Zero gate voltage drain current IDSS − − −1 µA VDS= −12V, VGS=0V Gate threshold voltage VGS (th) −0.3 − −1.0 V VDS= −6V, ID= −1mA ...