Nch+Pch MOSFET. US6M11 Datasheet

US6M11 MOSFET. Datasheet pdf. Equivalent


Part US6M11
Description 1.5V Drive Nch+Pch MOSFET
Feature 1.5V Drive Nch+Pch MOSFET US6M11 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zD.
Manufacture Rohm
Datasheet
Download US6M11 Datasheet


1.5V Drive Nch+Pch MOSFET US6M11 zStructure Silicon N-chann US6M11 Datasheet
Recommendation Recommendation Datasheet US6M11 Datasheet




US6M11
1.5V Drive Nch+Pch MOSFET
US6M11
zStructure
Silicon N-channel MOSFET /
Silicon P-channel MOSFET
zDimensions (Unit : mm)
TUMT6
SOT-363T
zFeatures
1) Nch MOSFET and Pch MOSFET are put in TUMT6 package.
2) Low on-resistance.
3) Low voltage drive (1.5V drive).
4) Built-in G-S Protection Diode.
Abbreviated symbol : M11
zApplications
Switching
zInner circuit
(6) (5)
(4)
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
US6M11
Taping
TR
3000
1
2
1
(1) (2)
1 ESD PROTECTION DIODE
2 BODY DIODE
(3)
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
1 Pw10µs, Duty cycle1%
2 Mounted on a ceramic board.
Symbol
VDSS
VGSS
ID
IDP 1
IS
ISP 1
PD 2
Tch
Tstg
Limits
Tr1 : Nchannel Tr2 : Pchannel
Unit
20 12 V
±10 ±10
V
±1.5 ±1.3
A
±6 ±5.2 A
0.5 0.5 A
6
5.2
A
1.0 W / TOTAL
0.7 W / ELEMENT
150 °C
55 to +150
°C
2
(1) Tr1 (Nch) Source
(2) Tr1 (Nch) Gate
(3) Tr2 (Pch) Drain
(4) Tr2 (Pch) Source
(5) Tr2 (Pch) Gate
(6) Tr1 (Nch) Drain
zThermal resistance
Parameter
Channel to ambient
Mounted on a ceramic board
Symbol
Rth(ch-a)
Limits
125
179
Unit
°C/W / TOTAL
°C/W / ELEMENT
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
1/7
2009.07 - Rev.A



US6M11
US6M11
<N-ch>
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Gate-source leakage
IGSS
Drain-source breakdown voltage V(BR) DSS
Zero gate voltage drain current IDSS
Gate threshold voltage
VGS (th)
Static drain-source on-state
resistance
RDS (on)
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Pulsed
Yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
Qg
Qgs
Qgd
Min.
20
0.3
1.6
Typ.
130
170
220
300
110
18
15
5
5
20
3
1.8
0.3
0.3
Max.
±10
1
1.0
180
240
310
600
Unit Conditions
µA VGS= ±10V, VDS=0V
V ID= 1mA, VGS=0V
µA VDS= 20V, VGS=0V
V VDS= 10V, ID= 1mA
mID= 1.5A, VGS= 4.5V
mID= 1.5A, VGS= 2.5V
mID= 0.8A, VGS= 1.8V
mID= 0.3A, VGS= 1.5V
S VDS= 10V, ID= 1.5A
pF VDS= 10V
pF VGS=0V
pF f=1MHz
ns VDD 10V
ns ID= 1A
VGS= 4.5V
ns RL 10
ns RG=10
nC VDD 10V, VGS= 4.5V
nC ID= 1.5A
nC RL 6.7Ω, RG= 10
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter
Forward voltage
Pulsed
Symbol Min. Typ. Max. Unit
VSD
1.2 V
Conditions
IS= 1.5A, VGS=0V
<P-ch>
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS − − ±10 µA VGS= ±10V, VDS=0V
Drain-source breakdown voltage V(BR) DSS 12 − − V ID= 1mA, VGS=0V
Zero gate voltage drain current IDSS − − −1 µA VDS= 12V, VGS=0V
Gate threshold voltage
VGS (th) 0.3 − −1.0 V VDS= 6V, ID= 1mA
190 260 mID= 1.3A, VGS= 4.5V
Static drain-source on-state
resistance
RDS (on)
280 390 mID= 0.6A, VGS= 2.5V
400 600 mID= 0.6A, VGS= 1.8V
530 1060 mID= 0.2A, VGS= 1.5V
Forward transfer admittance Yfs 1.4 − − S VDS= 6V, ID= 1.3A
Input capacitance
Ciss
290
pF VDS= 6V
Output capacitance
Coss 28 pF VGS= 0V
Reverse transfer capacitance Crss
21 pF f=1MHz
Turn-on delay time
Rise time
Turn-off delay time
Fall time
td (on) 8 ns VDD 6V
tr 10 ns ID= 0.6A
td (off)
30
VGS= 4.5V
ns RL 10
tf 9 ns RG= 10
Total gate charge
Qg 2.4 nC VDD 6V, VGS= 4.5V
Gate-source charge
Qgs 0.6 nC ID= 1.3A
Gate-drain charge
Qgd 0.4 nC RL 4.6Ω, RG= 10
Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Forward voltage
VSD
− −1.2 V
Pulsed
Conditions
IS= 1.3A, VGS=0V
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
2/7
Data Sheet
2009.07 - Rev.A







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