Pch MOSFET. RZR020P01 Datasheet

RZR020P01 MOSFET. Datasheet pdf. Equivalent


Part RZR020P01
Description 1.5V Drive Pch MOSFET
Feature 1.5V Drive Pch MOSFET RZR020P01 zStructure Silicon P-channel MOSFET zFeatures 1) Low on-resistance..
Manufacture Rohm
Datasheet
Download RZR020P01 Datasheet


1.5V Drive Pch MOSFET RZR020P01 zStructure Silicon P-channe RZR020P01 Datasheet
Recommendation Recommendation Datasheet RZR020P01 Datasheet




RZR020P01
1.5V Drive Pch MOSFET
RZR020P01
zStructure
Silicon P-channel MOSFET
zFeatures
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small and Surface Mount Package
(TSMT3).
4) Low voltage drive (1.5V).
zDimensions (Unit : mm)
TSMT3
2.9
0.4
(3)
(1) (2)
0.95 0.95
1.9
1.0MAX
0.85
0.7
0~0.1
0.16
(1) Gate
(2) Source
(3) Drain
Each lead has same dimensions
Abbreviated symbol : ZE
zApplications
Switching
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RZR020P01
Taping
TL
3000
zInner circuit
(3)
2
(1)
1
(2)
1 ESD PROTECTION DIODE
2 BODY DIODE
(1) Gate
(2) Source
(3) Drain
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of storage temperature
1 Pw10µs, Duty cycle1%
2 When mounted on a ceramic board.
Symbol
VDSS
VGSS
ID
IDP 1
IS
ISP 1
PD 2
Tch
Tstg
Limits
12
±10
±2
±6
0.8
6
1.0
150
55 to +150
Unit
V
V
A
A
A
A
W
°C
°C
zThermal resistance
Parameter
Channel to ambient
When mounted on a ceramic board.
Symbol
Rth (ch-a)
Limits
125
Unit
°C / W
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
1/4
2009.03 - Rev.A



RZR020P01
RZR020P01
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS − − ±10 µA VGS=±10V, VDS=0V
Drain-source breakdown voltage V(BR) DSS 12 − − V ID= 1mA, VGS=0V
Zero gate voltage drain current IDSS − − −1 µA VDS= 12V, VGS=0V
Gate threshold voltage
VGS (th) 0.3 − −1.0 V VDS= 6V, ID= 1mA
75 105 mID= 2A, VGS= 4.5V
Static drain-source on-state
resistance
RDS (on)
105 145 mID= 1A, VGS= 2.5V
150 225 mID= 1A, VGS= 1.8V
Forward transfer admittance
Yfs
2
200 400 mID= 0.4A, VGS= 1.5V
− − S VDS= 6V, ID= 2A
Input capacitance
Ciss
770
pF VDS= 6V
Output capacitance
Coss 75 pF VGS=0V
Reverse transfer capacitance Crss
60 pF f=1MHz
Turn-on delay time
Rise time
Turn-off delay time
Fall time
td (on) 10 ns VDD 6V
tr 17 ns ID= 1A
td (off)
65
VGS= 4.5V
ns RL 6
tf 35 ns RG=10
Total gate charge
Qg 6.5 nC VDD 6V, ID= 2A
Gate-source charge
Qgs 1.3 nC VGS= 4.5V
Gate-drain charge
Qgd 0.8 nC RL 3, RG=10
Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter
Forward voltage
Pulsed
Symbol Min. Typ. Max. Unit
Conditions
VSD
− −1.2 V IS= 2A, VGS=0V
Data Sheet
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
2/4
2009.03 - Rev.A







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