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Nch MOSFET. RUQ050N02 Datasheet

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Nch MOSFET. RUQ050N02 Datasheet






RUQ050N02 MOSFET. Datasheet pdf. Equivalent




RUQ050N02 MOSFET. Datasheet pdf. Equivalent





Part

RUQ050N02

Description

1.5V Drive Nch MOSFET

Manufacture

Rohm

Datasheet
Download RUQ050N02 Datasheet


Rohm RUQ050N02

RUQ050N02; 1.5V Drive Nch MOSFET RUQ050N02 Stru cture Silicon N-channel MOSFET Featu res 1) Low On-resistance. 2) Space savi ng, small surface mount package (TSMT6) . 3) 1.5V drive Applications Switchi ng Dimensions (Unit : mm) TSMT6 SOT -457T Each lead has same dimensions Abb reviated symbol : XG Packaging spec ifications Package Type Code Basic ordering unit (pieces) RUQ0.


Rohm RUQ050N02

50N02 Taping TR 3000 Inner circuit (6) (5) (4) ∗2 ∗1 (1) (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (1) Drain (2) Drain (3) Gate (3) (4) So urce (5) Drain (6) Drain Absolute m aximum ratings (Ta=25C) Parameter Drain-source voltage Gate-source volta ge Drain current Continuous Pulsed S ource current (Body diode) Continuous Pulsed Total power dissipation .


Rohm RUQ050N02

Channel temperature Range of storage t emperature ∗1 Pw 10μs, Duty cycle 1 % ∗2 Mounted on a ceramic board Symb ol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg Limits 20 ±10 ±5.0 ± 10 1.0 10 1.25 150 −55 to +150 Unit V V A A A A W °C °C Thermal resis tance Parameter Channel to ambient ∗ Mounted on a ceramic board Symbol Rth( ch-a) ∗ Limits 100 Unit °C/W www.rohm.



Part

RUQ050N02

Description

1.5V Drive Nch MOSFET

Manufacture

Rohm

Datasheet
Download RUQ050N02 Datasheet




 RUQ050N02
1.5V Drive Nch MOSFET
RUQ050N02
Structure
Silicon N-channel MOSFET
Features
1) Low On-resistance.
2) Space saving, small surface mount package (TSMT6).
3) 1.5V drive
Applications
Switching
Dimensions (Unit : mm)
TSMT6
SOT-457T
Each lead has same dimensions
Abbreviated symbol : XG
Packaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RUQ050N02
Taping
TR
3000
Inner circuit
(6)
(5)
(4)
2
1
(1) (2)
1 ESD PROTECTION DIODE
2 BODY DIODE
(1) Drain
(2) Drain
(3) Gate
(3) (4) Source
(5) Drain
(6) Drain
Absolute maximum ratings (Ta=25C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of storage temperature
1 Pw 10μs, Duty cycle 1%
2 Mounted on a ceramic board
Symbol
VDSS
VGSS
ID
IDP 1
IS
ISP 1
PD 2
Tch
Tstg
Limits
20
±10
±5.0
±10
1.0
10
1.25
150
55 to +150
Unit
V
V
A
A
A
A
W
°C
°C
Thermal resistance
Parameter
Channel to ambient
Mounted on a ceramic board
Symbol
Rth(ch-a)
Limits
100
Unit
°C/W
www.rohm.com
c 2010 ROHM Co., Ltd. All rights reserved.
1/4
2010.08 - Rev.A





 RUQ050N02
RUQ050N02
Electrical characteristics (Ta=25C)
Parameter
Symbol
Gate-source leakage
IGSS
Drain-source breakdown voltage V(BR) DSS
Zero gate voltage drain current IDSS
Gate threshold voltage
VGS (th)
Static drain-source on-state
resistance
RDS (on)
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Pulsed
Yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
Qg
Qgs
Qgd
Min.
20
0.3
6.5
Typ.
22
27
32
40
900
190
120
15
25
70
100
12
2.5
1.7
Max.
±10
1
1.0
30
38
45
80
Unit Conditions
μA VGS=±10V, VDS=0V
V ID= 1mA, VGS=0V
μA VDS= 20V, VGS=0V
V VDS= 10V, ID= 1mA
mΩ ID= 5.0A, VGS= 4.5V
mΩ ID= 5.0A, VGS= 2.5V
mΩ ID= 2.5A, VGS= 1.8V
mΩ ID= 1.0A, VGS= 1.5V
S VDS= 10V, ID= 5.0A
pF VDS= 10V
pF VGS=0V
pF f=1MHz
ns VDD 10V
ns ID= 2.5A
VGS= 4.5V
ns RL 4Ω
ns RG=10Ω
nC VDD 10V, ID= 5.0A
nC VGS= 4.5V
nC RL 2Ω, RG=10Ω
Body diode characteristics (Source-drain) (Ta=25C)
Parameter
Symbol Min. Typ. Max. Unit
Forward voltage
VSD
1.2 V
Pulsed
Conditions
IS= 1.0A, VGS=0V
Data Sheet
www.rohm.com
c 2010 ROHM Co., Ltd. All rights reserved.
2/4
2010.08 - Rev.A





 RUQ050N02
RUQ050N02
Electrical characteristics curves
10000
1000
Ta=25°C
f=1MHz
VGS=0V
Ciss
Coss
100 Crss
10
0.01
0.1
1 10 100
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
10
Ta=125°C
1
Ta=75°C
Ta=25°C
Ta=25°C
0.1
VDS=10V
Pulsed
0.01
0.001
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
GATE-SOURCE VOLTAGE : VGS (V)
Fig.4 Typical Transfer Characteristics
1000
Ta=125°C
100
Ta=75°C
Ta=25°C
Ta=25°C
VGS=4.5V
Pulsed
10
0.01
0.1 1
DRAIN CURRENT : ID (A)
10
Fig.7 Static Drain-Source
On-State Resistance vs.
Drain current (Ι)
1000
tf
100
td (off)
10
1
0.01
td (on)
tr
0.1
Ta=25°C
VDD=10V
VGS=4.5V
RG=10Ω
Pulsed
1 10
DRAIN CURRENT : ID (A)
Fig.2 Switching Characteristics
60
ID=5.0A
ID=2.5A
40
Ta=25°C
Pulsed
20
0
0 1 2 3 4 5 6 7 8 9 10
GATE-SOURCE VOLTAGE : VGS (V)
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
1000
VGS=2.5V
Pulsed
Ta=125°C
Ta=75°C
100 Ta=25°C
Ta=25°C
10
0.01
0.1 1
DRAIN CURRENT : ID (A)
10
Fig.8 Static Drain-Source
On-State Resistance vs.
Drain current (ΙΙ)
Data Sheet
6
Ta=25°C
VDD=10V
5
ID=5A
RG=10Ω
Pulsed
4
3
2
1
0
0 2 4 6 8 10 12 14 16
TOTAL GATE CHARGE : Qg (nC)
Fig.3 Dynamic Input Characteristics
10
Ta=125°C
Ta=75°C
Ta=25°C
Ta=25°C
1
VGS=0V
Pulsed
0.1
0.01
0.0 0.5 1.0 1.5
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.6 Source Current vs.
Source-Drain Voltage
1000
Ta=125°C
Ta=75°C
Ta=25°C
100 Ta=25°C
VGS=1.8V
Pulsed
10
0.01
0.1 1
DRAIN CURRENT : ID (A)
10
Fig.9 Static Drain-Source
On-State Resistance vs.
Drain current (ΙΙΙ)
www.rohm.com
c 2010 ROHM Co., Ltd. All rights reserved.
3/4
2010.08 - Rev.A



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