RUQ050N02

1.5V Drive Nch MOSFET RUQ050N02 Structure Silicon N-channel MOSFET Features 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 3) 1.5V drive Applications Switching Dimensions (Unit : mm) TSMT6 SOT-457T Each lead has same dimensions Abbreviated symbol : XG Packaging specifications Package Type Code Basic ordering unit (pieces) RUQ050N02 Taping TR 3000 Inner circuit (6) (5) (4) ∗2 ∗1 (1) (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (1) Drain (2) Drain (3) Gate (3) (4) Source (5) Drain (6) Drain Absolute maximum ratings (Ta=25C) Parameter Drain-source voltage Gate-source voltage Drain current Continuous Pulsed Source current (Body diode) Continuous Pulsed Total power dissipation Channel temperature Range of storage temperature ∗1 Pw 10μs, Duty cycle 1% ∗2 Mounted on a ceramic board Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg Limits 20 ±10 ±5.0 ±10 1.0 10 1.25 150 −55 to +150 Unit V V A A A A W °C °C Thermal resistance Parameter Channel to ambient ∗ Mounted on a ceramic board Symbol Rth(ch-a) ∗ Limits 100 Unit °C/W www.rohm.com ○c 2010 ROHM Co., Ltd. All rights reserved. 1/4 2010.08 - Rev.A RUQ050N02 Electrical characteristics (Ta=25C) Parameter Symbol Gate-source leakage IGSS Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-state resistance ∗ RDS (on) Forward transfer admittance Input capacitance Output ca...