Pch MOSFET. RZQ045P01 Datasheet

RZQ045P01 MOSFET. Datasheet pdf. Equivalent


Part RZQ045P01
Description 1.5V Drive Pch MOSFET
Feature Transistors 1.5V Drive Pch MOSFET RZQ045P01 RZQ045P01 zStructure Silicon P-channel MOSFET zFeature.
Manufacture Rohm
Datasheet
Download RZQ045P01 Datasheet


Transistors 1.5V Drive Pch MOSFET RZQ045P01 RZQ045P01 zStr RZQ045P01 Datasheet
Recommendation Recommendation Datasheet RZQ045P01 Datasheet




RZQ045P01
Transistors
1.5V Drive Pch MOSFET
RZQ045P01
RZQ045P01
zStructure
Silicon P-channel MOSFET
zFeatures
1) Low on-resistance.
2) High power package.
3) Low voltage drive. (1.5V)
zApplications
Switching
zDimensions (Unit : mm)
TSMT6
2.9
1.9
0.95 0.95
(6) (5) (4)
1.0MAX
0.85
0.7
1pin mark
(1) (2) (3)
0.4
0~0.1
0.16
Each lead has same dimensions
Abbreviated symbol : YG
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RZQ045P01
Taping
TR
3000
zEquivalent circuit
(6) (5)
(4)
2
1
(1) (2)
1 ESD PROTECTION DIODE
2 BODY DIODE
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of Storage temperature
1 Pw10µs, Duty cycle1%
2 Mounted on a ceramic board
Symbol
VDSS
VGSS
ID
IDP 1
IS
ISP 1
PD 2
Tch
Tstg
Limits
12
±10
±4.5
±12
1
12
1.25
150
55 to +150
Unit
V
V
A
A
A
A
W
°C
°C
zThermal resistance
Parameter
Channel to ambient
Mounted on a ceramic board.
Symbol
Rth(ch-a)
Limits
100
Unit
°C / W
(1) Drain
(2) Drain
(3) Gate
(3) (4) Source
(5) Drain
(6) Drain
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RZQ045P01
Transistors
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS − − ±10 µA VGS=±10V, VDS=0V
Drain-source breakdown voltage V(BR) DSS 12 − − V ID= 1mA, VGS=0V
Zero gate voltage drain current IDSS − − −1 µA VDS= 12V, VGS=0V
Gate threshold voltage
VGS (th) 0.3 − −1.0 V VDS= 6V, ID= 1mA
25 35 mID= 4.5A, VGS= 4.5V
Static drain-source on-state
resistance
RDS (on)
31 43 mID= 2.2A, VGS= 2.5V
39 58 mID= 2.2A, VGS= 1.8V
Forward transfer admittance
50 100 mID= 0.9A, VGS= 1.5V
Yfs 6.5
S VDS= 6V, ID= 4.5A
Input capacitance
Ciss
2450
pF VDS= 6V
Output capacitance
Coss 320 pF VGS=0V
Reverse transfer capacitance Crss
290
Turn-on delay time
td (on) 12
Rise time
tr 75
Turn-off delay time
td (off)
390
Fall time
tf 215
Total gate charge
Qg 31
Gate-source charge
Qgs 4.5
Gate-drain charge
Qgd 4.0
pF f=1MHz
ns ID= 2.2A
ns VDD 6V
VGS= 4.5V
ns RL 2.7
ns RG=10
nC VDD 6V RL 1.3
nC VGS= 4.5V RG=10
nC ID= 4.5A
Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter
Forward voltage
Pulsed
Symbol Min. Typ. Max. Unit
Conditions
VSD
− −1.2 V IS= 4.5A, VGS=0V
RZQ045P01
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