RUE002N05

1.2V Drive Nch MOSFET RUE002N05  Structure Silicon N-channel MOSFET Features 1) High speed switing. 2) Small package(EMT3). 3)Ultra low voltage drive(1.2V drive).  Application Switching  Dimensions (Unit : mm) EMT3 (SC-75A) Abbreviated symbol : RH  Packaging specifications Package Type Code Basic ordering unit (pieces) RUE002N05 Taping TL 3000   Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Drain-source voltage Gate-source voltage Drain current Continuous Pulsed Source current (Body Diode) Continuous Pulsed Power dissipation Channel temperature Range of storage temperature VDSS VGSS ID IDP *1 IS ISP *1 PD *2 Tch Tstg 50 8 200 800 125 800 150 150 55 to +150 *1 Pw10s, Duty cycle1% *2 Each terminal mounted on a recommended land. Unit V V mA mA mA mA mW C C  Inner circuit (3) ∗1 (2) (1) SOURCE (2) GATE (3) DRAIN ∗2 (1) ∗1 BODY DIODE ∗2 ESD PROTECTION DIODE  Thermal resistance Parameter Channel to ambient * Each terminal mounted on a recommended land. Symbol Rth (ch-a)* Limits 833 Unit C / W www.rohm.com ○c 2010 ROHM Co., Ltd. All rights reserved. 1/5 2010.06 - Rev.B RUE002N05 Electrical characteristics (Ta = 25C) Parameter Symbol Gate-source leakage IGSS Drain-source breakdown voltage V(BR)DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-state resistance RDS (on*) Forward transfer admittance Input capacitance Output capacitance Reverse transfer...