Nch MOSFET. RUE002N05 Datasheet

RUE002N05 MOSFET. Datasheet pdf. Equivalent


Part RUE002N05
Description 1.2V Drive Nch MOSFET
Feature 1.2V Drive Nch MOSFET RUE002N05  Structure Silicon N-channel MOSFET Features 1) High speed switing.
Manufacture Rohm
Datasheet
Download RUE002N05 Datasheet


1.2V Drive Nch MOSFET RUE002N05  Structure Silicon N-channe RUE002N05 Datasheet
Recommendation Recommendation Datasheet RUE002N05 Datasheet




RUE002N05
1.2V Drive Nch MOSFET
RUE002N05
Structure
Silicon N-channel MOSFET
Features
1) High speed switing.
2) Small package(EMT3).
3)Ultra low voltage drive(1.2V drive).
Application
Switching
Dimensions (Unit : mm)
EMT3
(SC-75A)
<SOT-416>
Abbreviated symbol : RH
Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
RUE002N05
Taping
TL
3000
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol Limits
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
VDSS
VGSS
ID
IDP *1
IS
ISP *1
PD *2
Tch
Tstg
50
8
200
800
125
800
150
150
55 to +150
*1 Pw10s, Duty cycle1%
*2 Each terminal mounted on a recommended land.
Unit
V
V
mA
mA
mA
mA
mW
C
C
Inner circuit
(3)
1
(2)
(1) SOURCE
(2) GATE
(3) DRAIN
2
(1)
1 BODY DIODE
2 ESD PROTECTION DIODE
Thermal resistance
Parameter
Channel to ambient
* Each terminal mounted on a recommended land.
Symbol
Rth (ch-a)*
Limits
833
Unit
C / W
www.rohm.com
c 2010 ROHM Co., Ltd. All rights reserved.
1/5
2010.06 - Rev.B



RUE002N05
RUE002N05
Electrical characteristics (Ta = 25C)
Parameter
Symbol
Gate-source leakage
IGSS
Drain-source breakdown voltage V(BR)DSS
Zero gate voltage drain current IDSS
Gate threshold voltage
VGS (th)
Static drain-source on-state
resistance
RDS (on*)
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
*Pulsed
l Yfs l *
Ciss
Coss
Crss
td(on)*
tr *
td(off)*
tf *
Min.
-
50
-
0.3
-
-
-
-
-
0.4
-
-
-
-
-
-
-
Typ.
-
-
-
-
1.6
1.7
1.9
2.0
2.4
-
25
6
3
4
6
15
55
Max.
10
-
1
1.0
2.2
2.4
2.7
4.0
7.2
-
-
-
-
-
-
-
-
Unit Conditions
A VGS=8V, VDS=0V
V ID=1mA, VGS=0V
A VDS=50V, VGS=0V
V VDS=10V, ID=1mA
ID=200mA, VGS=4.5V
ID=200mA, VGS=2.5V
ID=100mA, VGS=1.8V
ID=40mA, VGS=1.5V
ID=20mA, VGS=1.2V
S ID=200mA, VDS=10V
pF VDS=10V
pF VGS=0V
pF f=1MHz
ns ID=100mA, VDD 30V
ns VGS=4.5V
ns RL=300
ns RG=10
Body diode characteristics (Source-Drain) (Ta = 25C)
Parameter
Symbol Min.
Typ.
Forward voltage
VSD *
-
-
*Pulsed
Max. Unit
Conditions
1.2 V Is=200mA, VGS=0V
Data Sheet
www.rohm.com
c 2010 ROHM Co., Ltd. All rights reserved.
2/5
2010.06 - Rev.B







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