RUE002N02

1.2V Drive Nch MOSFET RUE002N02 zStructure Silicon N-channel MOSFET zDimensions (Unit : mm) EMT3 SOT-416 zApplications Switching zFeatures 1) Fast switching speed. 2) Low voltage drive (1.2V) makes this device ideal for portable equipment. 3) Drive circuits can be simple. zPackaging specifications Package Type Code Basic ordering unit (pieces) RUE002N02 Taping TL 3000 (1)Source (2)Gate (3)Drain Abbreviated symbol : QR zInner circuit (3) (2) ∗2 ∗1 ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (1) (1) Source (2) Gate (3) Drain zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Drain-source voltage VDSS Gate-source voltage VGSS Drain current Continuous Pulsed Total power dissipation ID IDP∗1 PD∗2 Channel temperature Tch Range of storage temperature Tstg ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Each terminal mounted on a recommended land Limits 20 ±8 ±200 ±400 150 150 −55 to +150 Unit V V mA mA mW °C °C zThermal resistance Parameter Channel to ambient ∗ Each terminal mounted on a recommended land Symbol Rth(ch-a) ∗ Limits 833 Unit °C / W www.rohm.com ○c 2009 ROHM Co., Ltd. All rights reserved. 1/4 2009.06 - Rev.A RUE002N02 zElectrical characteristics (Ta=25°C) Parameter Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time...