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Nch MOSFET. RUE002N02 Datasheet

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Nch MOSFET. RUE002N02 Datasheet






RUE002N02 MOSFET. Datasheet pdf. Equivalent




RUE002N02 MOSFET. Datasheet pdf. Equivalent





Part

RUE002N02

Description

1.2V Drive Nch MOSFET

Manufacture

Rohm

Datasheet
Download RUE002N02 Datasheet


Rohm RUE002N02

RUE002N02; 1.2V Drive Nch MOSFET RUE002N02 zStruct ure Silicon N-channel MOSFET zDimensio ns (Unit : mm) EMT3 SOT-416 zApplicati ons Switching zFeatures 1) Fast switchi ng speed. 2) Low voltage drive (1.2V) m akes this device ideal for portable equ ipment. 3) Drive circuits can be simple . zPackaging specifications Package Type Code Basic ordering unit (pieces) RUE002N02 Tapin.


Rohm RUE002N02

g TL 3000 (1)Source (2)Gate (3)Drain A bbreviated symbol : QR zInner circuit (3) (2) ∗2 ∗1 ∗1 ESD PROTECTIO N DIODE ∗2 BODY DIODE (1) (1) Sourc e (2) Gate (3) Drain zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Drain-source voltage VDSS Gate-sourc e voltage VGSS Drain current Continu ous Pulsed Total power dissipation ID IDP∗1 PD∗2 Channel temper.


Rohm RUE002N02

ature Tch Range of storage temperature Tstg ∗1 Pw≤10µs, Duty cycle≤1 % ∗2 Each terminal mounted on a recom mended land Limits 20 ±8 ±200 ±400 150 150 −55 to +150 Unit V V mA mA m W °C °C zThermal resistance Paramete r Channel to ambient ∗ Each terminal mounted on a recommended land Symbol R th(ch-a) ∗ Limits 833 Unit °C / W www.rohm.com ○c 2009 ROHM Co., Ltd. Al.



Part

RUE002N02

Description

1.2V Drive Nch MOSFET

Manufacture

Rohm

Datasheet
Download RUE002N02 Datasheet




 RUE002N02
1.2V Drive Nch MOSFET
RUE002N02
zStructure
Silicon N-channel
MOSFET
zDimensions (Unit : mm)
EMT3
SOT-416
zApplications
Switching
zFeatures
1) Fast switching speed.
2) Low voltage drive (1.2V) makes this
device ideal for portable equipment.
3) Drive circuits can be simple.
zPackaging specifications
Package
Type
Code
Basic ordering unit
(pieces)
RUE002N02
Taping
TL
3000
(1)Source
(2)Gate
(3)Drain
Abbreviated symbol : QR
zInner circuit
(3)
(2) 2
1
1 ESD PROTECTION DIODE
2 BODY DIODE
(1)
(1) Source
(2) Gate
(3) Drain
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Drain-source voltage
VDSS
Gate-source voltage
VGSS
Drain current
Continuous
Pulsed
Total power dissipation
ID
IDP1
PD2
Channel temperature
Tch
Range of storage temperature
Tstg
1 Pw10µs, Duty cycle1%
2 Each terminal mounted on a recommended land
Limits
20
±8
±200
±400
150
150
55 to +150
Unit
V
V
mA
mA
mW
°C
°C
zThermal resistance
Parameter
Channel to ambient
Each terminal mounted on a recommended land
Symbol
Rth(ch-a)
Limits
833
Unit
°C / W
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
1/4
2009.06 - Rev.A





 RUE002N02
RUE002N02
zElectrical characteristics (Ta=25°C)
Parameter
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Pulsed
Symbol
IGSS
V(BR)DSS
IDSS
VGS(th)
RDS(on)
|Yfs|
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Min.
20
0.3
200
Typ.
0.8
1.0
1.2
1.6
25
10
10
5
10
15
10
Max.
±10
1
1
1.2
1.4
2.4
4.8
Unit Conditions
µA VGS8V, VDS=0V
V ID=1mA, VGS=0V
µA VDS=20V, VGS=0V
V VDS=10V, ID=1mA
ID=200mA, VGS=2.5V
ID=200mA, VGS=1.8V
ID=40mA, VGS=1.5V
ID=20mA, VGS=1.2V
mS VDS=10V, ID=200mA
pF VDS=10V
pF VGS=0V
pF f=1MHz
ns VDD 10V, ID=150mA
ns VGS=4.0V
ns RL 67
ns RG=10
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter
Forward voltage
Pulsed
Symbol Min. Typ. Max. Unit
VSD
1.2 V
Conditions
IS= 100mA, VGS=0V
Data Sheet
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
2/4
2009.06 - Rev.A





 RUE002N02
RUE002N02
zElectrical characteristics curves
0.5
Ta=25°C
Pulsed
0.4
VGS= 1.5V
0.3
VGS= 1.3V
0.2
VGS= 4.5V VGS= 1.2V
0.1
VGS= 2.5V
VGS= 1.8V
0
0 0.2 0.4 0.6 0.8 1
DRAIN-SOURCE VOLTAGE : VDS[V]
Fig.1 Typical Output Characteristics()
Data Sheet
0.5
0.4
0.3
0.2
0.1
0
0
VGS= 2.5V
VGS= 1.8V
VGS= 1.3V
VGS= 1.5V
VGS= 1.2V
Ta=25°C
Pulsed
2 4 6 8 10
DRAIN-SOURCE VOLTAGE : VDS[V]
Fig.2 Typical Output Characteristics()
1 VDS=10V
Pulsed
0.1
0.01
Ta=125°C
75°C
0.001 25°C
25°C
0.0001
0.00001
0.0 0.5 1.0 1.5
GATE-SOURCE VOLTAGE : VGS (V)
Fig.3 Typical transfer characteristics
10000
Ta= 25°C
Pulsed
1000
VGS= 1.2V
VGS= 1.5V
VGS= 1.8V
VGS= 2.5V
VGS= 4.0V
10000
VGS= 4.0V
Pulsed
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
10000
VGS= 2.5V
Pulsed
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
100
0.001
0.01
0.1
DRAIN-CURRENT : ID[A]
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current()
1
100
0.001
0.01
0.1
1
DRAIN-CURRENT : ID[A]
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current()
100
0.001
0.01
0.1
1
DRAIN-CURRENT : ID[A]
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current()
10000
VGS= 1.8V
Pulsed
10000
VGS= 1.5V
Pulsed
10000
VGS= 1.2V
Pulsed
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
100
0.001
0.01
0.1
DRAIN-CURRENT : ID[A]
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current()
1
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
100
0.001
0.01
0.1
DRAIN-CURRENT : ID[A]
Fig.8 Static Drain-Source On-State
Resistance vs. Drain Current()
1
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
100
0.001
0.01
0.1
DRAIN-CURRENT : ID[A]
Fig.9 Static Drain-Source On-State
Resistance vs. Drain Current()
1
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c 2009 ROHM Co., Ltd. All rights reserved.
3/4
2009.06 - Rev.A



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