RW1A020ZP

1.5V Drive Pch MOSFET RW1A020ZP zStructure Silicon P-channel MOSFET zDimensions (Unit : mm) WEMT6 SOT-563T (6) (5) (4) zFeatures 1) Low on-resistance. 2) High power package. 3) Low voltage drive. (1.5V) (1) (2) (3) Abbreviated symbol : ZE zApplications Switching zInner circuit (6) (5) (4) zPackaging specifications Package Type Code Basic ordering unit (pieces) RW1A020ZP Taping T2R 8000 ∗2 ∗1 (1) (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (1) Drain (2) Drain (3) Gate (3) (4) Source (5) Drain (6) Drain zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Continuous Pulsed Source current (Body diode) Continuous Pulsed Total power dissipation Channel temperature Range of Storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 When mounted on a ceramic board Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg Limits −12 ±10 ±2 ±6 −0.5 −6 0.7 150 −55 to +150 zThermal resistance Parameter Channel to ambient ∗ When mounted on a ceramic board. Symbol Rth(ch-a) ∗ Limits 179 Unit V V A A A A W °C °C Unit °C / W www.rohm.com ○c 2009 ROHM Co., Ltd. All rights reserved. 1/4 2009.05 - Rev.A RW1A020ZP zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS − − ±10 µA VGS=±10V, VDS=0V Drain-source breakdown voltage V(BR) DSS −12 − − V ID= −1mA, VGS=0V Zero gate voltage drain current IDSS − − −1 µA VDS= −12V, VGS=0V Gate threshold voltage VGS (th) ...