Document
1.5V Drive Nch+SBD MOSFET
ES6U2
zStructure Silicon N-channel MOSFET / Schottky barrier diode
zFeatures 1) Nch MOSFET and schottky barrier diode
are put in WEMT6 package. 2) High-speed switching, Low On-resistance. 3) Low voltage drive (1.5V drive). 4) Built-in Low VF schottky barrier diode.
zApplications Switching
zDimensions (Unit : mm)
WEMT6 SOT-563T
(6) (5) (4)
(1) (2) (3)
Abbriviated symbol : U02
zInner circuit
(6) (5) (4)
zPackage specifications
Package
Type
Code
Basic ordering unit (pieces)
ES6U2
Taping T2R 8000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Drain-source voltage Gate-source voltage
Drain current
Source current (Body diode)
Continuous Pulsed Continuous Pulsed
VDSS VGSS
ID IDP ∗1 IS ISP ∗1
Channel temperature Power dissipation
Tch PD ∗2
∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board
Limits 20 ±10 ±1.5 ±3.0 0.5 3.0
150 0.7
∗2
∗1
(1) (2) ∗1 ESD protection diode ∗2 Body diode
(1)Gate
(2)Source
(3)Anode
(3) (4)Cathode (5)Drain
(6)Drain
Unit V V A A A A °C
W / ELEMENT
Parameter Repetitive peak reverse voltage Reverse voltage Forward current
Forward current surge peak Junction temperature Power dissipation
∗1 60Hz 1cyc. ∗2 Mounted on ceramic board
Symbol VRM VR IF IFSM ∗1 Tj PD ∗2
Limits 25 20 0.5 2.0 150 0.5
Unit V V A A °C
W / ELEMENT
Parameter
Power dissipation Range of storage temperature
∗ Mounted on a ceramic board
Symbol PD ∗ Tstg
Limits 0.8
−55 to +150
Unit W / TOTAL
°C
www.rohm.com ○c 2009 ROHM Co., Ltd. All rights reserved.
1/5
2009.12 - Rev.A
ES6U2
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Gate-source leakage
IGSS
−
Drain-source breakdown voltage V(BR) DSS 20
Zero gate voltage drain current IDSS
−
Gate threshold voltage
Static drain-source on-state resistance
VGS (th) RDS (on)∗
0.3 − − −
Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge
∗Pulsed
Yfs ∗
Ciss
Coss
Crss td (on) ∗
tr ∗ td (off) ∗
tf ∗ Qg ∗ Qgs ∗ Qgd ∗
− 1.6 − − − − − − − − − −
Typ. − − − −
130 170 220 300
− 110 18 15
5 5 20 3 1.8 0.3 0.3
Max. ±10
− 1 1.0 180 240 310 600 − − − − − − − − − − −
Unit Conditions
µA VGS=±10V, VDS=0V
V ID= 1mA, VGS=0V
µA VDS= 20V, VGS=0V
V VDS= 10V, ID= 1mA
mΩ ID= 1.5A, VGS= 4.5V
mΩ ID= 1.5A, VGS= 2.5V
mΩ ID= 0.8A, VGS= 1.8V
mΩ ID= 0.3A, VGS= 1.5V
S VDS= 10V, ID= 1.5A
pF VDS= 10V
pF VGS=0V
pF f=1MHz
ns VDD 10V
ns ID= 1A
ns
VGS= 4.5V RL 10Ω
ns RG= 10Ω
nC VDD 10V, VGS= 4.5V
nC ID= 1.5A, RL 6.7Ω nC RG= 10Ω
Parameter Forward voltage
Symbol Min. Typ. Max. Unit
Conditions
VSD ∗
−
− 1.2 V IS= 1.5A, VGS=0V
∗Pulsed
Parameter
Forward voltage
Reverse current
Symbol Min. Typ. Max. Unit
Conditions
− − 0.36 V IF= 0.1A VF
− − 0.52 V IF= 0.5A
IR − − 100 µA VR= 20V
Data Sheet
www.rohm.com ○c 2009 ROHM Co., Ltd. All rights reserved.
2/5
2009.12 - Rev.A
DRAIN CURRENT : ID[A] DRAIN CURRENT : ID[A] DRAIN CURRENT : ID[A]
ES6U2
zElectrical characteristics curves
1.5
VGS= 10V
Ta=25°C
VGS= 4.5V
Pulsed
VGS= 2.5V
1 VGS= 1.8V VGS= 1.5V
0.5 VGS= 1.3V
VGS= 1.2V 0
0 0.2 0.4 0.6 0.8 1
DRAIN-SOURCE VOLTAGE : VDS[V] Fig.1 Typical Output Characteristics(Ⅰ)
Data Sheet
1.5 VGS= 4.5V VGS= 1.8V
VGS= 1.5V 1
Ta=25°C Pulsed
0.5
0 0
VGS= 1.3V VGS= 1.1V 2 4 6 8 10
DRAIN-SOURCE VOLTAGE : VDS[V] Fig.2 Typical Output Characteristics(Ⅱ)
10 VDS= 10V Pulsed
1 Ta= 125°C Ta= 75°C Ta= 25°C
0.1 Ta= - 25°C
0.01
0.001 0 0.5 1 1.5 2
GATE-SOURCE VOLTAGE : VGS[V] Fig.3 Typical Transfer Characteristics
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ]
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ]
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ]
10000 Ta= 25°C Pulsed
1000
100
VGS= 1.5V VGS= 1.8V VGS= 2.5V VGS= 4.5V
10000 VGS= 4.5V Pulsed
1000
100
Ta=125°C Ta=75°C Ta=25°C Ta= -25°C
10000 VGS= 2.5V Pulsed
1000
100
Ta=125°C Ta=75°C Ta=25°C Ta= -25°C
10 0.01
0.1
1
10
DRAIN-CURRENT : ID[A]
Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ)
10 0.01 0.1 1 10
DRAIN-CURRENT : ID[A] Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅱ)
10 0.01
0.1
1
10
DRAIN-CURRENT : ID[A]
Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ)
FORWARD TRANSFER ADMITTANCE : |Yfs| [S]
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ]
10000 VGS= 1.8V Pulsed
1000
100
Ta=125°C Ta=75°C Ta=25°C Ta= -25°C
10000 VGS= 1.5V Pulsed
1000
100
Ta=125°C Ta=75°C Ta=25°C Ta= -25°C
10 0.01 0.1 1 10
DRAIN-CURRENT : ID[A] Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅳ)
10 0.01
0.1
1
10
DRAIN-CURRENT : ID[A]
Fig.8 Static Drain-Source On-State Resistance vs. Drain Current(Ⅴ)
10 VDS= 10V Pulsed
1 Ta= -25°C Ta=25°C Ta=75°C Ta=125°C
0.1 0.01 0.1 1 10
DRAIN-CURRENT : ID[A] Fig.9 Forward Transfer Admittance
vs. .