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ES6U2 Dataheets PDF



Part Number ES6U2
Manufacturers Rohm
Logo Rohm
Description 1.5V Drive Nch+SBD MOSFET
Datasheet ES6U2 DatasheetES6U2 Datasheet (PDF)

1.5V Drive Nch+SBD MOSFET ES6U2 zStructure Silicon N-channel MOSFET / Schottky barrier diode zFeatures 1) Nch MOSFET and schottky barrier diode are put in WEMT6 package. 2) High-speed switching, Low On-resistance. 3) Low voltage drive (1.5V drive). 4) Built-in Low VF schottky barrier diode. zApplications Switching zDimensions (Unit : mm) WEMT6 SOT-563T (6) (5) (4) (1) (2) (3) Abbriviated symbol : U02 zInner circuit (6) (5) (4) zPackage specifications Package Type Code Basic ordering unit .

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1.5V Drive Nch+SBD MOSFET ES6U2 zStructure Silicon N-channel MOSFET / Schottky barrier diode zFeatures 1) Nch MOSFET and schottky barrier diode are put in WEMT6 package. 2) High-speed switching, Low On-resistance. 3) Low voltage drive (1.5V drive). 4) Built-in Low VF schottky barrier diode. zApplications Switching zDimensions (Unit : mm) WEMT6 SOT-563T (6) (5) (4) (1) (2) (3) Abbriviated symbol : U02 zInner circuit (6) (5) (4) zPackage specifications Package Type Code Basic ordering unit (pieces) ES6U2 Taping T2R 8000 zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed VDSS VGSS ID IDP ∗1 IS ISP ∗1 Channel temperature Power dissipation Tch PD ∗2 ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board Limits 20 ±10 ±1.5 ±3.0 0.5 3.0 150 0.7 ∗2 ∗1 (1) (2) ∗1 ESD protection diode ∗2 Body diode (1)Gate (2)Source (3)Anode (3) (4)Cathode (5)Drain (6)Drain Unit V V A A A A °C W / ELEMENT Parameter Repetitive peak reverse voltage Reverse voltage Forward current Forward current surge peak Junction temperature Power dissipation ∗1 60Hz 1cyc. ∗2 Mounted on ceramic board Symbol VRM VR IF IFSM ∗1 Tj PD ∗2 Limits 25 20 0.5 2.0 150 0.5 Unit V V A A °C W / ELEMENT Parameter Power dissipation Range of storage temperature ∗ Mounted on a ceramic board Symbol PD ∗ Tstg Limits 0.8 −55 to +150 Unit W / TOTAL °C www.rohm.com ○c 2009 ROHM Co., Ltd. All rights reserved. 1/5 2009.12 - Rev.A ES6U2 zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Gate-source leakage IGSS − Drain-source breakdown voltage V(BR) DSS 20 Zero gate voltage drain current IDSS − Gate threshold voltage Static drain-source on-state resistance VGS (th) RDS (on)∗ 0.3 − − − Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ∗Pulsed Yfs ∗ Ciss Coss Crss td (on) ∗ tr ∗ td (off) ∗ tf ∗ Qg ∗ Qgs ∗ Qgd ∗ − 1.6 − − − − − − − − − − Typ. − − − − 130 170 220 300 − 110 18 15 5 5 20 3 1.8 0.3 0.3 Max. ±10 − 1 1.0 180 240 310 600 − − − − − − − − − − − Unit Conditions µA VGS=±10V, VDS=0V V ID= 1mA, VGS=0V µA VDS= 20V, VGS=0V V VDS= 10V, ID= 1mA mΩ ID= 1.5A, VGS= 4.5V mΩ ID= 1.5A, VGS= 2.5V mΩ ID= 0.8A, VGS= 1.8V mΩ ID= 0.3A, VGS= 1.5V S VDS= 10V, ID= 1.5A pF VDS= 10V pF VGS=0V pF f=1MHz ns VDD 10V ns ID= 1A ns VGS= 4.5V RL 10Ω ns RG= 10Ω nC VDD 10V, VGS= 4.5V nC ID= 1.5A, RL 6.7Ω nC RG= 10Ω Parameter Forward voltage Symbol Min. Typ. Max. Unit Conditions VSD ∗ − − 1.2 V IS= 1.5A, VGS=0V ∗Pulsed Parameter Forward voltage Reverse current Symbol Min. Typ. Max. Unit Conditions − − 0.36 V IF= 0.1A VF − − 0.52 V IF= 0.5A IR − − 100 µA VR= 20V Data Sheet www.rohm.com ○c 2009 ROHM Co., Ltd. All rights reserved. 2/5 2009.12 - Rev.A DRAIN CURRENT : ID[A] DRAIN CURRENT : ID[A] DRAIN CURRENT : ID[A] ES6U2 zElectrical characteristics curves 1.5 VGS= 10V Ta=25°C VGS= 4.5V Pulsed VGS= 2.5V 1 VGS= 1.8V VGS= 1.5V 0.5 VGS= 1.3V VGS= 1.2V 0 0 0.2 0.4 0.6 0.8 1 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.1 Typical Output Characteristics(Ⅰ) Data Sheet 1.5 VGS= 4.5V VGS= 1.8V VGS= 1.5V 1 Ta=25°C Pulsed 0.5 0 0 VGS= 1.3V VGS= 1.1V 2 4 6 8 10 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.2 Typical Output Characteristics(Ⅱ) 10 VDS= 10V Pulsed 1 Ta= 125°C Ta= 75°C Ta= 25°C 0.1 Ta= - 25°C 0.01 0.001 0 0.5 1 1.5 2 GATE-SOURCE VOLTAGE : VGS[V] Fig.3 Typical Transfer Characteristics STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 10000 Ta= 25°C Pulsed 1000 100 VGS= 1.5V VGS= 1.8V VGS= 2.5V VGS= 4.5V 10000 VGS= 4.5V Pulsed 1000 100 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 10000 VGS= 2.5V Pulsed 1000 100 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 10 0.01 0.1 1 10 DRAIN-CURRENT : ID[A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) 10 0.01 0.1 1 10 DRAIN-CURRENT : ID[A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) 10 0.01 0.1 1 10 DRAIN-CURRENT : ID[A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) FORWARD TRANSFER ADMITTANCE : |Yfs| [S] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 10000 VGS= 1.8V Pulsed 1000 100 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 10000 VGS= 1.5V Pulsed 1000 100 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 10 0.01 0.1 1 10 DRAIN-CURRENT : ID[A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) 10 0.01 0.1 1 10 DRAIN-CURRENT : ID[A] Fig.8 Static Drain-Source On-State Resistance vs. Drain Current(Ⅴ) 10 VDS= 10V Pulsed 1 Ta= -25°C Ta=25°C Ta=75°C Ta=125°C 0.1 0.01 0.1 1 10 DRAIN-CURRENT : ID[A] Fig.9 Forward Transfer Admittance vs. .


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