ES6U1

1.5V Drive Pch+SBD MOSFET ES6U1 zStructure Silicon P-channel MOSFET / Schottky barrier diode zFeatures 1) Pch MOSFET and schottky barrier diode are put in WEMT6 package. 2) High-speed switching, Low On-resistance. 3) Low voltage drive (1.5V drive). 4) Built-in Low VF schottky barrier diode. zApplication Switching zDimensions (Unit : mm) WEMT6 SOT-563T (6) (5) (4) (1) (2) (3) Abbreviated symbol : U01 zInner circuit (6) (5) (4) zPackaging specifications Package Type Code Basic ordering unit (pieces) ES6U1 Taping T2R 8000 ∗2 ∗1 (1) (2) ∗1 ESD protection diode ∗2 Body diode (1) Gate (2) Source (3) Anode (3) (4) Cathode (5) Drain (6) Drain zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed VDSS VGSS ID IDP ∗1 IS ISP ∗1 Channel temperature Power dissipation Tch PD ∗2 ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board Limits −12 ±10 ±1.3 ±2.6 −0.5 −2.6 150 0.7 Unit V V A A A A °C W / ELEMENT Parameter Repetitive peak reverse voltage Reverse voltage Forward current Forward current surge peak Junction temperature Power dissipation ∗1 60Hz 1cycle ∗2 Mounted on a ceramic board Symbol VRM VR IF IFSM ∗1 Tj PD ∗2 Limits 25 20 0.5 2.0 150 0.5 Unit V V A A °C W / ELEMENT Parameter Power dissipation Range of storage temperature ∗ Mounted on a ceramic board Symbol PD ∗ Tstg Limits 0.8 −55 to +150 Unit ...