Document
Applications
l Synchronous Rectifier MOSFET for Isolated DC-DC Converters
l Low Power Motor Drive Systems
PD - 97436
IRF7351PbF
HEXFET® Power MOSFET
VDSS
RDS(on) max
Qg (typ.)
60V 17.8mΩ@VGS = 10V 24nC
Benefits l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage
and Current l 20V VGS Max. Gate Rating
S1 1 G1 2 S2 3 G2 4
8 D1 7 D1 6 D2 5 D2
Top View
SO-8
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C
Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
fPower Dissipation fPower Dissipation
TJ TSTG
Linear Derating Factor Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
gRθJL Junction-to-Drain Lead fgRθJA Junction-to-Ambient
Max. 60 ± 20 8.0 6.4 64 2.0 1.28
0.016 -55 to + 150
Units V
A
W
W/°C °C
Typ. ––– –––
Max. 20 62.5
Units °C/W
Notes through
are on page 10
www.irf.com
1
11/18/09
IRF7351PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)
Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient
60 ––– ––– V VGS = 0V, ID = 250µA
––– 0.068 ––– V/°C Reference to 25°C, ID = 1mA
e––– 13.7 17.8 mΩ VGS = 10V, ID = 8.0A
2.0 ––– 4.0
V VDS = VGS, ID = 50µA
––– -8.2 ––– mV/°C
IDSS
Drain-to-Source Leakage Current
––– ––– 20 µA VDS = 60V, VGS = 0V
––– ––– 250
VDS = 60V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = -20V
gfs Forward Transconductance Qg Total Gate Charge
18 ––– ––– ––– 24 36
S VDS = 25V, ID = 6.4A
Qgs1 Qgs2 Qgd Qgodr
Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive
––– 3.8 ––– ––– 1.2 ––– ––– 7.2 ––– ––– 11.8 –––
VDS = 30V nC VGS = 10V
ID = 6.4A See Fig. 17
Qsw Switch Charge (Qgs2 + Qgd)
––– 8.4 –––
Qoss td(on) tr td(off) tf
Output Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
––– 7.5 ––– nC VDS = 16V, VGS = 0V
––– 5.1 –––
eVDD = 30V, VGS = 10V
––– 5.9 ––– ns ID = 6.4A
––– 17 –––
RG = 1.8Ω
––– 6.7 –––
Ciss Input Capacitance
––– 1330 –––
VGS = 0V
Coss Output Capacitance
––– 190 ––– pF VDS = 30V
Crss
Reverse Transfer Capacitance
––– 92 –––
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
dEAS Single Pulse Avalanche Energy IAR Avalanche Current
Typ. ––– –––
Max. 325 6.4
Units mJ A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
––– ––– 1.8
MOSFET symbol
(Body Diode) ISM Pulsed Source Current
Ã(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
––– ––– 64
––– ––– 1.3 ––– 20 30 ––– 61 92
A showing the integral reverse
p-n junction diode.
.