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IRF7351PbF Dataheets PDF



Part Number IRF7351PbF
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRF7351PbF DatasheetIRF7351PbF Datasheet (PDF)

Applications l Synchronous Rectifier MOSFET for Isolated DC-DC Converters l Low Power Motor Drive Systems PD - 97436 IRF7351PbF HEXFET® Power MOSFET VDSS RDS(on) max Qg (typ.) 60V 17.8mΩ@VGS = 10V 24nC Benefits l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l 20V VGS Max. Gate Rating S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 Top View SO-8 Absolute Maximum Ratings Parameter VDS Drain-to-Source Voltage VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C.

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Applications l Synchronous Rectifier MOSFET for Isolated DC-DC Converters l Low Power Motor Drive Systems PD - 97436 IRF7351PbF HEXFET® Power MOSFET VDSS RDS(on) max Qg (typ.) 60V 17.8mΩ@VGS = 10V 24nC Benefits l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l 20V VGS Max. Gate Rating S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 Top View SO-8 Absolute Maximum Ratings Parameter VDS Drain-to-Source Voltage VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V cContinuous Drain Current, VGS @ 10V Pulsed Drain Current fPower Dissipation fPower Dissipation TJ TSTG Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Resistance Parameter gRθJL Junction-to-Drain Lead fgRθJA Junction-to-Ambient Max. 60 ± 20 8.0 6.4 64 2.0 1.28 0.016 -55 to + 150 Units V A W W/°C °C Typ. ––– ––– Max. 20 62.5 Units °C/W Notes  through … are on page 10 www.irf.com 1 11/18/09 IRF7351PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th) Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient 60 ––– ––– V VGS = 0V, ID = 250µA ––– 0.068 ––– V/°C Reference to 25°C, ID = 1mA e––– 13.7 17.8 mΩ VGS = 10V, ID = 8.0A 2.0 ––– 4.0 V VDS = VGS, ID = 50µA ––– -8.2 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 20 µA VDS = 60V, VGS = 0V ––– ––– 250 VDS = 60V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V gfs Forward Transconductance Qg Total Gate Charge 18 ––– ––– ––– 24 36 S VDS = 25V, ID = 6.4A Qgs1 Qgs2 Qgd Qgodr Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive ––– 3.8 ––– ––– 1.2 ––– ––– 7.2 ––– ––– 11.8 ––– VDS = 30V nC VGS = 10V ID = 6.4A See Fig. 17 Qsw Switch Charge (Qgs2 + Qgd) ––– 8.4 ––– Qoss td(on) tr td(off) tf Output Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time ––– 7.5 ––– nC VDS = 16V, VGS = 0V ––– 5.1 ––– eVDD = 30V, VGS = 10V ––– 5.9 ––– ns ID = 6.4A ––– 17 ––– RG = 1.8Ω ––– 6.7 ––– Ciss Input Capacitance ––– 1330 ––– VGS = 0V Coss Output Capacitance ––– 190 ––– pF VDS = 30V Crss Reverse Transfer Capacitance ––– 92 ––– ƒ = 1.0MHz Avalanche Characteristics Parameter dEAS Single Pulse Avalanche Energy ™IAR Avalanche Current Typ. ––– ––– Max. 325 6.4 Units mJ A Diode Characteristics Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ––– ––– 1.8 MOSFET symbol (Body Diode) ISM Pulsed Source Current Ù(Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ––– ––– 64 ––– ––– 1.3 ––– 20 30 ––– 61 92 A showing the integral reverse p-n junction diode. .


TP4212C IRF7351PbF TP4212A


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