RSH065N06

4V Drive Nch MOSFET RSH065N06 Structure Silicon N-channel MOSFET Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). Application Switching Packaging specifications Package Type Code Basic ordering unit (pieces) RSH065N06 Taping TB 2500 Absolute maximum ratings (Ta=25C) Parameter Drain-source voltage Gate-source voltage Drain current Continuous Pulsed Source current (Body diode) Continuous Pulsed Total power dissipatino Channel temperature Range of storage temperature ∗1 Pw≤10μs, Duty cycle≤1% ∗2 Mounted on a ceramic board. Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg Limits 60 20 ±6.5 ±26 1.6 26 2.0 150 −55 to +150 Unit V V A A A A W °C °C Thermal resistance Parameter Channel to ambient ∗ Mounted on a ceramic board. Symbol Rth (ch-A) ∗ Limits 62.5 Unit °C / W Dimensions (Unit : mm) SOP8 Each lead has same dimensions Inner circuit (8) (7) (6) (5) (8) (7) (6) (5) ∗2 ∗1 (1) (2) (3) (4) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (1) (2) (3) (4) (1)Source (2)Source (3)Source (4)Gate (5)Drain (6)Drain (7)Drain (8)Drain ∗A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded. www.rohm.com ○c 2009 ROHM Co., Ltd. All rights reserved. 1/4 2009.12 - Rev.A RSH065N06 Electrical characteristics (Ta=25C) Parameter Symbol Min. Gate-s...