SP8K31FRA

Transistor 4V Drive Nch+Nch MOSFET SP8KK3311FRA SP8SKP381KF3R1A AEC-Q101 Qualified zStructure Silicon N-channel MOSFET zDimensions (Unit : mm) SOP8 zFeatures 1) Built-in G-S Protection Diode. 2) Small surface Mount Package (SOP8). zApplications Switching zPackaging dimensions Package Type Code Basic ordering unit (pieces) SSPP88KK3311FRA Taping TB 2500 zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Drain-source voltage VDSS Gate-source voltage VGSS Drain current Continuous Pulsed ID IDP ∗1 Source current (Body diode) Continuous Pulsed Total power dissipation IS ISP ∗1 PD ∗2 Channel temperature Tch Range of storage temperature Tstg ∗1 Pw 10µs, Duty cycle 1% ∗2 Mounted on a ceramic board. Limits 60 ±20 ±3.5 ±14 1.0 14 2.0 150 −55 to +150 Each lead has same dimensions zEquivalent circuit (8) (7) (6) (5) (8) (7) (6) (5) ∗2 ∗2 (1) (2) (3) (4) ∗1 ∗1 (1) (2) (3) (4) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain ∗A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded. Unit V V A A A A W °C °C 1/4 Transistor zElectrical characteristics (Ta=25°C) Parameter Symbol Gate-sourc...