RTQ020N05

RTQ020N05 Nch 45V 2A Power MOSFET VDSS RDS(on) (Max.) ID PD 45V 190mW 2A 1.25W lFeatures 1) Low on - resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT6). 4) Pb-free lead plating ; RoHS compliant lApplication DC/DC converters lAbsolute maximum ratings(Ta = 25°C) Parameter Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Power dissipation Junction temperature Range of storage temperature Datasheet lOutline TSMT6 SOT-457T (6) (5) (4) (1) (2) (3) lInner circuit (1) Drain (2) Drain (3) Gate (4) Source (5) Drain (6) Drain *1 ESD PROTECTION DIODE *2 BODY DIODE lPackaging specifications Packaging Reel size (mm) Tape width (mm) Type Basic ordering unit (pcs) Taping code Marking Taping 180 8 3,000 TR PU Symbol VDSS ID *1 ID,pulse *2 VGSS PD *3 PD *4 Tj Tstg Value 45 2 8 12 1.25 0.6 150 -55 to +150 Unit V A A V W W °C °C www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 1/11 2012.10 - Rev.B RTQ020N05 lThermal resistance Parameter Thermal resistance, junction - ambient Data Sheet Symbol RthJA *3 RthJA *4 Values Min. Typ. Max. Unit - - 100 °C/W - - 208 °C/W lElectrical characteristics(Ta = 25°C) ,unless otherwise specified Parameter Symbol Conditions Min. Values Typ. Max. Drain - Source breakdown voltage V(BR)DSS VGS = 0V, ID = 1mA 45 - - Unit V Breakdown voltage temperature coefficient ΔV(BR)DSS ID=1mA ΔTj referenced to 25°C - Zero gate voltage drain current Gate ...