R5021ANJ

R5021ANJ Nch 500V 21A Power MOSFET Datasheet VDSS RDS(on) (Max.) ID PD lFeatures 1) Low on-resistance. 500V 0.22W 21A 100W lOutline LPTS (SC-83) TO-263(D2PAK) (2) (1) lInner circuit (3) 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V. 4) Drive circuits can be simple. (1) Gate (2) Drain (3) Source *1 Body Diode 5) Parallel use is easy. 6) Pb-free lead plating ; RoHS compliant lPackaging specifications Packaging Taping lApplication Switching Power Supply Reel size (mm) Tape width (mm) Type Basic ordering unit (pcs) 330 24 1,000 Taping code TL Marking R5021ANJ lAbsolute maximum ratings(Ta = 25°C) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Avalanche energy, single pulse Avalanche energy, repetitive Avalanche current Power dissipation (Tc = 25°C) Junction temperature Range of storage temperature Reverse diode dv/dt Tc = 25°C Tc = 100°C VDSS ID *1 ID *1 ID,pulse *2 VGSS EAS *3 EAR *4 IAR *3 PD Tj Tstg dv/dt *5 500 21 10.2 84 30 29.6 6.7 10.5 100 150 -55 to +150 15 V A A A V mJ mJ A W °C °C V/ns www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 1/13 2012.10 - Rev.B R5021ANJ lAbsolute maximum ratings Parameter Drain - Source voltage slope Data Sheet Symbol Conditions dv/dt VDS = 400V, ID = 21A Tj = 125°C Values 50 Unit V/ns lThermal resistance Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient Sol...