R5009ANX

R5009ANX Nch 500V 9A Power MOSFET Datasheet VDSS RDS(on) (Max.) ID PD lFeatures 1) Low on-resistance. 500V 0.72W 9A 50W lOutline TO-220FM lInner circuit (1) (2) (3) 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V. 4) Drive circuits can be simple. 5) Parallel use is easy. (1) Gate (2) Drain (3) Source *1 Body Diode 6) Pb-free lead plating ; RoHS compliant lPackaging specifications Packaging Bulk Reel size (mm) - lApplication Switching Power Supply Tape width (mm) Type Basic ordering unit (pcs) Taping code 500 - Marking R5009ANX lAbsolute maximum ratings(Ta = 25°C) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Avalanche energy, single pulse Avalanche energy, repetitive Avalanche current Power dissipation (Tc = 25°C) Junction temperature Range of storage temperature Reverse diode dv/dt Tc = 25°C Tc = 100°C VDSS ID *1 ID *1 ID,pulse *2 VGSS EAS *3 EAR *4 IAR *3 PD Tj Tstg dv/dt *5 500 9 4.3 36 30 5.4 3.5 4.5 50 150 -55 to +150 15 V A A A V mJ mJ A W °C °C V/ns www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 1/13 2012.10 - Rev.B R5009ANX lAbsolute maximum ratings Parameter Drain - Source voltage slope Data Sheet Symbol Conditions dv/dt VDS = 400V, ID = 9A Tj = 125C Values Unit 50 V/ns lThermal resistance Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temperature, wavesoldering for 10...