10V Drive Nch MOSFET
10V Drive Nch MOSFET
R5019ANX
Structure Silicon N-channel MOSFET
Features 1) Low on-resistance. 2) Low input capacita...
Description
10V Drive Nch MOSFET
R5019ANX
Structure Silicon N-channel MOSFET
Features 1) Low on-resistance. 2) Low input capacitance. 3) High ESD.
Data Sheet
Dimensions (Unit : mm)
TO-220FM
10.0 φ3.2
4.5 2.8
15.0 12.0
2.5 8.0
(1) Gate (2) Drain (3) Source
14.0
1.2 1.3
0.8
2.54 2.54 (1) (2) (3)
0.75
2.6
Application Switching
Packaging specifications
Package Type Code
Basic ordering unit (pieces) R5019ANX
Bulk -
500
Inner circuit
∗1
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol Limits
Drain-source voltage
Gate-source voltage
Drain current
Continuous Pulsed
Source current (Body Diode)
Continuous Pulsed
Avalanche current
Avalanche energy
Power dissipation
Channel temperature
Range of storage temperature
VDSS VGSS
ID *3 IDP *1 IS *3 ISP *1 IAS *2 EAS *2 PD *4 Tch Tstg
500 30 19 76 19 76 9.5 24.3 50 150 55 to 150
*1 Pw10s, Duty cycle1%
*2 L 500H, VDD=50V, RG=25, Tch=25C
*3 Limited only by maximum temperature allowed.
*4 TC=25C
Unit V V A A A A A mJ W C C
Thermal resistance Parameter
Channel to Case
Symbol Rth (ch-c)
Limits 2.5
Unit C / W
(1) Gate (2) Drain (3) Source
(1) (2) (3)
1 BODY DIODE
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1/5
2011.10 - Rev.A
R5019ANX
Electrical characteristics (Ta = 25C)
Parameter
Symbol
Gate-source leakage
IGSS
Drain-source breakdown voltage V(BR)DSS
Zero gate voltage drain current
IDSS
Gate threshold voltage
Static drain-source on-state resistance
V...
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