Nch 600V 6A Power MOSFET
R6006ANX
Nch 600V 6A Power MOSFET
Datasheet
VDSS RDS(on) (Max.)
ID PD
600V 1.2W 6A 40W
lOutline
TO-220FM
(1)(2)(3)
...
Description
R6006ANX
Nch 600V 6A Power MOSFET
Datasheet
VDSS RDS(on) (Max.)
ID PD
600V 1.2W 6A 40W
lOutline
TO-220FM
(1)(2)(3)
lFeatures 1) Low on-resistance.
lInner circuit
2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V. 4) Drive circuits can be simple.
(1) Gate (2) Drain (3) Source
*1 Body Diode
5) Parallel use is easy.
6) Pb-free lead plating ; RoHS compliant
lPackaging specifications Packing
Bulk
Reel size (mm)
-
lApplication Switching Power Supply
Tape width (mm) Type
Basic ordering unit (pcs) Taping code
500
-
Marking
R6006ANX
lAbsolute maximum ratings (Ta = 25C) Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current
Pulsed drain current Gate - Source voltage Avalanche energy, single pulse Avalanche energy, repetitive Avalanche current Power dissipation (Tc = 25C) Junction temperature Range of storage temperature Reverse diode dv/dt
Tc = 25C Tc = 100C
VDSS ID *1 ID *1 ID,pulse *2 VGSS EAS *3 EAR *4 IAR *3 PD
Tj
Tstg dv/dt *5
600 6 2.9 24 30 2.4 1.9 3 40 150 -55 to +150 15
V A A A V mJ mJ A W C C V/ns
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1/13
2012.01 - Rev.B
R6006ANX lAbsolute maximum ratings
Parameter
Drain - Source voltage slope
Data Sheet
Symbol
Conditions
dv/dt
VDS = 480V, ID = 6A Tj = 125C
Values Unit 50 V/ns
lThermal resistance
Parameter
Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temperature, wavesoldering for 10s
S...
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