R5011FNX

R5011FNX Nch 500V 11A Power MOSFET Datasheet VDSS RDS(on) (Max.) ID PD 500V 0.52W 11A 50W lOutline TO-220FM (1)(2)(3) lFeatures 1) Fast reverse recovery time (trr). lInner circuit 2) Low on-resistance. 3) Fast switching speed. (1) Gate (2) Drain (3) Source 4) Gate-source voltage (VGSS) guaranteed to be 30V. 5) Drive circuits can be simple. *1 Body Diode 6) Parallel use is easy. 7) Pb-free lead plating ; RoHS compliant lPackaging specifications Packaging Bulk Reel size (mm) - lApplication Switching Power Supply Tape width (mm) Type Basic ordering unit (pcs) Taping code 500 - Marking R5011FNX lAbsolute maximum ratings(Ta = 25°C) Parameter Drain - Source voltage Continuous drain current Tc = 25°C Tc = 100°C Pulsed drain current Gate - Source voltage Avalanche energy, single pulse Avalanche energy, repetitive Avalanche current Power dissipation (Tc = 25°C) Junction temperature Range of storage temperature Symbol VDSS ID *1 ID *1 ID,pulse *2 VGSS EAS *3 EAR *4 IAR *3 PD Tj Tstg dv/dt *5 Value 500 11 5.4 44 30 8.1 3.5 5.5 50 150 -55 to +150 15 Unit V A A A V mJ mJ A W °C °C V/ns www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 1/13 2012.07 - Rev.B R5011FNX lAbsolute maximum ratings Parameter Drain - Source voltage slope Data Sheet Symbol Conditions dv/dt VDS = 400V, ID = 11A Tj = 125°C Values 50 Unit V/ns lThermal resistance Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temp...