R6008FNX

R6008FNX Nch 600V 8A Power MOSFET Datasheet VDSS RDS(on) (Max.) ID PD 600V 0.95W 8A 50W lOutline TO-220FM (1)(2)(3) lFeatures 1) Low on-resistance. lInner circuit 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V. 4) Drive circuits can be simple. (1) Gate (2) Drain (3) Source *1 Body Diode 5) Parallel use is easy. 6) Pb-free lead plating ; RoHS compliant lPackaging specifications Packaging Bulk Reel size (mm) - lApplication Switching Power Supply Tape width (mm) Type Basic ordering unit (pcs) Taping code 500 - Marking R6008FNX lAbsolute maximum ratings(Ta = 25°C) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Avalanche energy, single pulse Avalanche energy, repetitive Avalanche current Power dissipation (Tc = 25°C) Junction temperature Range of storage temperature Reverse diode dv/dt Tc = 25°C Tc = 100°C VDSS ID *1 ID *1 ID,pulse *2 VGSS EAS *3 EAR *4 IAR *3 PD Tj Tstg dv/dt *5 600 8 3.9 32 30 4.3 3.4 4 50 150 -55 to +150 15 V A A A V mJ mJ A W °C °C V/ns www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 1/13 2012.10 - Rev.B R6008FNX lAbsolute maximum ratings Parameter Drain - Source voltage slope Data Sheet Symbol Conditions dv/dt VDS = 480V, ID = 8A Tj = 125°C Values Unit 50 V/ns lThermal resistance Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temperature, wavesoldering for 10s ...