RZM002P02

1.2V Drive Pch MOSFET RZM002P02 zStructure Silicon P-channel MOSFET zFeatures 1) High Speed Switching. 2) Small package (VMT3). 3) Ultra Low Voltage drive. (1.2V drive) zDimensions (Unit : mm) VMT3 SOT-723 1.2 0.32 (3) 0.2 0.8 0.2 1.2 (1)Gate (2)Source (3)Drain 0.22 (1)(2) 0.4 0.4 0.8 0.13 0.5 Abbreviated symbol : YK zApplications Switching zInner circuit (3) zPackaging specifications Package Type Code Basic ordering unit (pieces) RZM002P02 Taping T2L 8000 ∗2 (1) ∗1 (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (1) Gate (2) Source (3) Drain zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Continuous Pulsed Continuous Source current (Body diode) Pulsed Total power dissipation Channel temperature Range of storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Each terminal mounted on a recommended land Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg Limits −20 ±10 ±200 ±800 −100 −800 150 150 −55 to +150 zThermal resistance Parameter Channel to ambient ∗ Each terminal mounted on a recommended land Symbol Rth(ch-a) ∗ Limits 833 Unit V V mA mA mA mA mW °C °C Unit °C/W www.rohm.com ○c 2009 ROHM Co., Ltd. All rights reserved. 1/4 2009.06 - Rev.B RZM002P02 zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS − − ±10 µA VGS= ±10V, VDS=0V Drain-source breakdown voltage V(BR) DSS −20 − − V ID= −1mA, VGS=0V Zero gate voltage drain curr...