RSD050N10

4V Drive Nch MOSFET RSD050N10 Structure Silicon N-channel MOSFET Features 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 3) Parallel use is easy. Applications Switching Dimensions (Unit : mm) CPT3 (SC-63) Packaging specifications Package Type Code Basic ordering unit (pieces) CPT3 TL 2500 Absolute maximum ratings (Ta=25°C) Parameter Symbol Limits Drain-source voltage Gate-source voltage Drain current Continuous Pulsed Source current (Body Diode) Continuous Pulsed Power dissipation Channel temperature Range of storage temperature VDSS VGSS ID IDP *1 IS ISP *1 PD *2 Tch Tstg 100 20 5.0 20 5.0 20 15 150 55 to +150 *1 Pw≦10s, Duty cycle≦1% *2 Tc=25°C Unit V V A A A A W °C °C Inner circuit ∗1 (1) Gate (2) Drain (3) Source ∗2 *1 ESD Protection Diode *2 Body Diode (1) (2) (3) Thermal resistance Parameter Channel to Case * Tc=25C Symbol Rth (ch-c) * Limits 8.33 Unit °C / W www.rohm.com ©2012 ROHM Co., Ltd. All rights reserved. 1/6 2012.02 - Rev.B RSD050N10 Electrical characteristics (Ta=25°C) Parameter Symbol Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage IGSS V(BR)DSS IDSS VGS (th) Static drain-source on-state resistance RDS * (on) Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-...