4V Drive Nch MOSFET
4V Drive Nch MOSFET
RSD050N10
Structure Silicon N-channel MOSFET
Features 1) Low on-resistance. 2) Fast switching spee...
Description
4V Drive Nch MOSFET
RSD050N10
Structure Silicon N-channel MOSFET
Features 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 3) Parallel use is easy.
Applications Switching
Dimensions (Unit : mm)
CPT3
(SC-63)
Packaging specifications
Package Type Code
Basic ordering unit (pieces)
CPT3 TL
2500
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Drain-source voltage
Gate-source voltage
Drain current
Continuous Pulsed
Source current (Body Diode)
Continuous Pulsed
Power dissipation
Channel temperature
Range of storage temperature
VDSS VGSS
ID IDP *1 IS ISP *1 PD *2 Tch Tstg
100 20 5.0 20 5.0 20 15 150 55 to +150
*1 Pw≦10s, Duty cycle≦1%
*2 Tc=25°C
Unit V V A A A A W °C °C
Inner circuit
∗1
(1) Gate (2) Drain (3) Source
∗2
*1 ESD Protection Diode
*2 Body Diode
(1) (2) (3)
Thermal resistance Parameter
Channel to Case
* Tc=25C
Symbol Rth (ch-c) *
Limits 8.33
Unit °C / W
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1/6
2012.02 - Rev.B
RSD050N10
Electrical characteristics (Ta=25°C)
Parameter
Symbol
Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage
IGSS V(BR)DSS
IDSS VGS (th)
Static drain-source on-state resistance
RDS
*
(on)
Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-...
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