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US6M2 Dataheets PDF



Part Number US6M2
Manufacturers Rohm
Logo Rohm
Description MOSFET
Datasheet US6M2 DatasheetUS6M2 Datasheet (PDF)

Transistors 2.5V Drive Nch+Pch MOSFET US6M2 US6M2 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions (Unit : mm) TUMT6 0.2Max. zFeatures 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) High-speed switching, low On-resistance. 3) Low voltage drive (2.5V drive). 4) Built-in G-S Protection Diode. Abbreviated symbol : M02 zApplications Switching zPackaging specifications Type US6M2 Package Code Basic ordering unit (pieces) Taping TR 3000 zAbsolute maximu.

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Transistors 2.5V Drive Nch+Pch MOSFET US6M2 US6M2 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions (Unit : mm) TUMT6 0.2Max. zFeatures 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) High-speed switching, low On-resistance. 3) Low voltage drive (2.5V drive). 4) Built-in G-S Protection Diode. Abbreviated symbol : M02 zApplications Switching zPackaging specifications Type US6M2 Package Code Basic ordering unit (pieces) Taping TR 3000 zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Total power dissipation Channel temperature Storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board. Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg zInner circuit (6) (5) (4) ∗1 ∗2 ∗2 ∗1 (1) Tr1 (Nch) Source (2) Tr1 (Nch) Gate (1) (2) (3) Tr2 (Pch) Drain (3) (4) Tr2 (Pch) Source ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (5) Tr2 (Pch) Gate (6) Tr1 (Nch) Drain Limits Tr1 : Nchannel Tr2 : Pchannel Unit 30 −20 V 12 −12 V ±1.5 ±1 A ±6 ±4 A 0.6 −0.4 A 6 −4 A 1.0 W / TOTAL 0.7 W / ELEMENT 150 °C −55 to +150 °C zThermal resistance Parameter Channel to ambient ∗ Mounted on a ceramic board Symbol Rth(ch-a) ∗ Limits 125 179 Unit °C/W / TOTAL °C/W / ELEMENT Rev.A 1/3 Transistors N-ch zElectrical characteristics (Ta=25°C) Parameter Symbol Gate-source leakage IGSS Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-state resistance RDS (on)∗ Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ∗Pulsed Yfs ∗ Ciss Coss Crss td (on) ∗ tr ∗ td (off) ∗ tf ∗ Qg ∗ Qgs ∗ Qgd ∗ Min. − 30 − 0.5 − − − 1.5 − − − − − − − − − − Typ. − − − − 170 180 240 − 80 13 12 7 9 15 6 1.6 0.5 0.3 Max. 10 − 1 1.5 240 250 340 − − − − − − − − 2.2 − − Unit Conditions µA VGS=12V, VDS=0V V ID= 1mA, VGS=0V µA VDS= 30V, VGS=0V V VDS= 10V, ID= 1mA mΩ ID= 1.5A, VGS= 4.5V mΩ ID= 1.5A, VGS= 4V mΩ ID= 1.5A, VGS= 2.5V S VDS= 10V, ID= 1.5A pF VDS= 10V pF VGS=0V pF f=1MHz ns VDD 15V ns ID= 0.75A VGS= 4.5V ns RL= 20Ω ns RG=10Ω nC VDD 15V, VGS= 4.5V nC ID= 1.5A nC RL= 10Ω, RG= 10Ω zBody diode characteristics (Source-drain) (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD − − 1.2 V IS= 0.6A, VGS=0V US6M2 Rev.A 2/3 Transistors P-ch zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS − − 10 µA VGS= −12V, VDS=0V Drain-source breakdown voltage V(BR) DSS −20 − − V ID= −1mA, VGS=0V Zero gate voltage drain current IDSS − − −1 µA VDS= −20V, VGS=0V Gate threshold voltage VGS (th) −0.7 − −2.0 V VDS= −10V, ID= −1mA Static drain-source on-state resistance RDS (on)∗ − − − 280 390 mΩ ID= −1A, VGS= −4.5V 310 430 mΩ ID= −1A, VGS= −4V 570 800 mΩ ID= −0.5A, VGS= −2.5V Forward transfer admittance Yfs ∗ 0.7 − − S VDS= −10V, ID= −0.5A Input capacitance Ciss − 150 − pF VDS= −10V Output capacitance Coss − 20 − pF VGS= 0V Reverse transfer capacitance Crss − 20 − pF f=1MHz Turn-on delay time Rise time Turn-off delay time Fall time td (on) ∗ − 9 − ns VDD −15V tr ∗ − 8 − ns ID= −0.5A td (off) ∗ − 25 − VGS= −4.5V ns RL= 30Ω tf ∗ − 10 − ns RG= 10Ω Total gate charge Qg ∗ − 2.1 − nC VDD −15V, VGS= −4.5V Gate-source charge Qgs ∗ − 0.5 − nC ID= −1A Gate-drain charge Qgd ∗ − 0.5 − nC RL= 15Ω, RG= 10Ω ∗Pulsed zBody diode characteristics (Source-drain) (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD − − −1.2 V IS= −0.4A, VGS=0V US6M2 Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or rela.


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