Document
Transistors
2.5V Drive Nch+Pch MOSFET
US6M2
US6M2
zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET
zDimensions (Unit : mm)
TUMT6
0.2Max.
zFeatures 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) High-speed switching, low On-resistance. 3) Low voltage drive (2.5V drive). 4) Built-in G-S Protection Diode.
Abbreviated symbol : M02
zApplications Switching
zPackaging specifications
Type US6M2
Package Code Basic ordering unit (pieces)
Taping TR 3000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage Gate-source voltage
Drain current
Source current (Body diode)
Continuous Pulsed Continuous Pulsed
Total power dissipation
Channel temperature
Storage temperature
∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board.
Symbol
VDSS VGSS
ID IDP ∗1 IS ISP ∗1
PD ∗2
Tch Tstg
zInner circuit
(6) (5)
(4)
∗1
∗2 ∗2
∗1
(1) Tr1 (Nch) Source
(2) Tr1 (Nch) Gate
(1) (2)
(3) Tr2 (Pch) Drain (3) (4) Tr2 (Pch) Source
∗1 ESD PROTECTION DIODE ∗2 BODY DIODE
(5) Tr2 (Pch) Gate (6) Tr1 (Nch) Drain
Limits Tr1 : Nchannel Tr2 : Pchannel
Unit
30 −20 V
12 −12 V
±1.5 ±1
A
±6 ±4 A
0.6 −0.4 A
6 −4 A
1.0 W / TOTAL
0.7 W / ELEMENT
150 °C
−55 to +150
°C
zThermal resistance
Parameter Channel to ambient
∗ Mounted on a ceramic board
Symbol Rth(ch-a) ∗
Limits 125 179
Unit °C/W / TOTAL °C/W / ELEMENT
Rev.A
1/3
Transistors
N-ch zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Gate-source leakage
IGSS
Drain-source breakdown voltage V(BR) DSS
Zero gate voltage drain current IDSS
Gate threshold voltage
VGS (th)
Static drain-source on-state resistance
RDS (on)∗
Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge
∗Pulsed
Yfs ∗
Ciss
Coss
Crss td (on) ∗
tr ∗ td (off) ∗
tf ∗ Qg ∗ Qgs ∗ Qgd ∗
Min. − 30 − 0.5 − − − 1.5 − − − − − − − − − −
Typ. − − − −
170 180 240
− 80 13 12 7 9 15 6 1.6 0.5 0.3
Max. 10 − 1 1.5 240 250 340 − − − − − − − − 2.2 − −
Unit Conditions µA VGS=12V, VDS=0V V ID= 1mA, VGS=0V µA VDS= 30V, VGS=0V V VDS= 10V, ID= 1mA mΩ ID= 1.5A, VGS= 4.5V mΩ ID= 1.5A, VGS= 4V mΩ ID= 1.5A, VGS= 2.5V S VDS= 10V, ID= 1.5A pF VDS= 10V pF VGS=0V pF f=1MHz ns VDD 15V ns ID= 0.75A
VGS= 4.5V ns RL= 20Ω ns RG=10Ω nC VDD 15V, VGS= 4.5V nC ID= 1.5A nC RL= 10Ω, RG= 10Ω
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Forward voltage
VSD − − 1.2 V IS= 0.6A, VGS=0V
US6M2
Rev.A
2/3
Transistors
P-ch zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS − − 10 µA VGS= −12V, VDS=0V
Drain-source breakdown voltage V(BR) DSS −20 − − V ID= −1mA, VGS=0V
Zero gate voltage drain current IDSS − − −1 µA VDS= −20V, VGS=0V
Gate threshold voltage
VGS (th) −0.7 − −2.0 V VDS= −10V, ID= −1mA
Static drain-source on-state resistance
RDS (on)∗
− − −
280 390 mΩ ID= −1A, VGS= −4.5V 310 430 mΩ ID= −1A, VGS= −4V 570 800 mΩ ID= −0.5A, VGS= −2.5V
Forward transfer admittance Yfs ∗ 0.7 − − S VDS= −10V, ID= −0.5A
Input capacitance
Ciss
− 150 −
pF VDS= −10V
Output capacitance
Coss − 20 − pF VGS= 0V
Reverse transfer capacitance Crss
− 20 − pF f=1MHz
Turn-on delay time Rise time Turn-off delay time Fall time
td (on) ∗ − 9 − ns VDD −15V
tr ∗ − 8 − ns ID= −0.5A
td (off) ∗ −
25
−
VGS= −4.5V ns RL= 30Ω
tf ∗ − 10 − ns RG= 10Ω
Total gate charge
Qg ∗ − 2.1 − nC VDD −15V, VGS= −4.5V
Gate-source charge
Qgs ∗ − 0.5 − nC ID= −1A
Gate-drain charge
Qgd ∗ − 0.5 − nC RL= 15Ω, RG= 10Ω
∗Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Forward voltage
VSD − − −1.2 V IS= −0.4A, VGS=0V
US6M2
Rev.A
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or rela.