RT1E050RP

4V Drive Pch MOSFET RT1E050RP  Structure Silicon P-channel MOSFET Features 1) Low on-resistance. 2) High power package. 3) 4V drive.  Application Switching  Dimensions (Unit : mm) TSST8 (8) (7) (6) (5) (1) (2) (3) (4) Abbreviated symbol :UD  Packaging specifications Package Type Code Basic ordering unit (pieces) RT1E050RP Taping TR 3000 ○  Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Continuous Pulsed Continuous Pulsed VDSS VGSS ID IDP *1 IS ISP *1 PD *2 30 20 5 20 1 20 1.25 Channel temperature Tch 150 Range of storage temperature Tstg 55 to +150 *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. Unit V V A A A A W C C  Thermal resistance Parameter Channel to Ambient *Mounted on a ceramic board. Symbol Limits Rth (ch-a)* 100 Unit C / W  Inner circuit (8) (7) (6) (5) (1) Drain (2) Drain (3) Drain (4) Gate (5) Source (6) Drain (7) Drain (8) Drain ∗2 ∗1 (1) (2) (3) (4) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 1/5 2010.04 - Rev.A RT1E050RP  Electrical characteristics (Ta = 25C) Parameter Symbol Gate-source leakage IGSS Drain-source breakdown voltage V(BR)DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-state resistance RDS * (on) Forward transfer admittance Input capacitance Output capacitance Reverse...